2SD789 Silicon NPN Epitaxial REJ03G0772-0300 (Previous ADE-208-1140A) Rev.3.00 Aug.10.2005 Application • Low frequency power amplifier • Complementary pair with 2SB740 Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Rev.3.00 Aug 10, 2005 page 1 of 5 Symbol VCBO VCEO VEBO IC PC Ratings 100 50 6 1 0.9 Unit V V V A W Tj Tstg 150 –55 to +150 °C °C 2SD789 Electrical Characteristics (Ta = 25°C) Item Symbol Collector to base breakdown voltage V(BR)CBO Collector to emitter breakdown voltage V(BR)CEO Emitter to base breakdown voltage V(BR)EBO Collector cutoff current ICBO Emitter cutoff current IEBO DC current transfer ratio hFE*1 Collector to emitter saturation voltage VCE(sat) Gain bandwidth product fT Collector output capacitance Cob Note: 1. The 2SD789 is grouped by hFE as follows. C D E 160 to 320 250 to 500 400 to 800 Rev.3.00 Aug 10, 2005 page 2 of 5 Min 100 50 6 — — 160 — — — Typ — — — — — — — 100 20 Max — — — 1 0.2 800 0.3 — — Unit V V V µA µA V MHz pF Test conditions IC = 10 µA, IE = 0 IC = 1 mA, RBE = ∞ IE = 10 µA, IC = 0 VCB = 80 V, IE = 0 VEB = 6 V, IC = 0 VCE = 2 V, IC = 0.1A IC = 1 A, IB = 0.1 A VCE = 2 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1MHz 2SD789 Main Characteristics Typical Output Characteristics 100 Collector Current IC (mA) 1.2 0.8 0.4 50 0 Collector Current IC (A) 0.3 80 0.25 0.2 60 0.15 40 0.1 20 0.05 mA 100 150 4 6 8 10 Collector to Emitter Voltage VCE (V) Typical Output Characteristics Typical Transfer Characteristics 1,000 40 35 30 25 20 1.6 15 1.2 10 5 mA PC = 0.9 W 0.8 0.4 IB = 0 0.4 0 2 0 Ambient Temperature Ta (°C) 2.0 0.8 300 VCE = 2 V 100 30 10 3 1 1.2 1.6 2.0 0 0.2 0.4 0.6 0.8 1.0 DC Current Transfer Ratio vs. Collector Current Saturation Voltage vs. Collector Current Pulse VCE = 2 V 3,000 1,000 300 100 30 10 1 3 10 30 100 300 Collector Current IC (mA) Rev.3.00 Aug 10, 2005 page 3 of 5 1,000 Base to Emitter Saturation Voltage VBE(sat) (V) Base to Emitter Voltage VBE (V) Collector to Emitter Saturation Voltage VCE(sat) (V) Collector to Emitter Voltage VCE (V) 10,000 DC Current Transfer Ratio hFE 0.35 IB = 0 Collector Current IC (mA) Collector Power Dissipation PC (W) Maximum Collector Dissipation Curve 1.0 VBE(sat) 0.3 0.1 VCE(sat) 0.03 Pulse IC = 10 IB 0.01 10 30 100 300 Collector Current IC (mA) 1,000 2SD789 Collector Output Capacitance Cob (pF) Collector Output Capacitance vs. Collector to Base Voltage 300 100 30 10 f = 1 MHz IE = 0 3 1.0 0.3 0.3 1.0 3 10 30 100 300 Collector to Base Voltage VCB (V) Rev.3.00 Aug 10, 2005 page 4 of 5 2SD789 Package Dimensions JEITA Package Code RENESAS Code Package Name MASS[Typ.] SC-51 PRSS0003DC-A TO-92 Mod / TO-92 ModV 0.35g 4.8 ± 0.4 Unit: mm 2.3 Max 0.65 ± 0.1 0.75 Max 0.7 0.60 Max 0.55 Max 10.1 Min 8.0 ± 0.5 3.8 ± 0.4 0.5 Max 1.27 2.54 Ordering Information Part Name 2SD789CTZ-E 2SD789DTZ-E 2SD789ETZ-E Quantity 2500 Shipping Container Hold Box, Radial Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.3.00 Aug 10, 2005 page 5 of 5 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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