HITACHI 2SC4877

2SC4877
Silicon NPN Triple Diffused
Application
TO–3PFM
TV / character display horizontal deflection output
Features
• High breakdown voltage
VCES = 1500 V
• Built–in damper diode type
• Isolated package
TO-3PFM
1. Base
2. Collector
3. Emitter
1
2
3
2
1
3
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Rating
Unit
———————————————————————————————————————————
Collector to emitter voltage
VCES
1500
V
———————————————————————————————————————————
Emitter to base voltage
VEBO
6
V
———————————————————————————————————————————
Collector current
IC
8
A
———————————————————————————————————————————
Collector surge current
ic(surge)
20
A
———————————————————————————————————————————
Collector power dissipation
PC*1
50
W
———————————————————————————————————————————
Junction temperature
Tj
150
°C
———————————————————————————————————————————
Storage temperature
Tstg
–55 to +150
°C
———————————————————————————————————————————
C to E diode forward current
ID
8
A
———————————————————————————————————————————
Note: 1. Value at TC = 25°C.
2SC4877
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
———————————————————————————————————————————
Emitter to base breakdown
voltage
V(BR)EBO
6
—
—
V
IE = 400 mA, IC = 0
———————————————————————————————————————————
Collector cutoff current
ICES
—
—
500
µA
VCE = 1500 V, RBE = 0
———————————————————————————————————————————
DC current transfer ratio
hFE
—
—
25
—
VCE = 5 V, IC = 1 A
———————————————————————————————————————————
Collector to emitter saturation
voltage
VCE(sat)
—
—
5
V
IC = 7 A, IB = 1.4 A
———————————————————————————————————————————
Base to emitter saturation
voltage
VBE(sat)
—
—
1.5
V
IC = 7 A, IB = 1.4 A
———————————————————————————————————————————
C to E diode forward voltage
VECF
—
—
3.0
V
IF = 8 A
———————————————————————————————————————————
Fall time
tf
—
—
0.5
µs
ICP = 7 A, IB1 = 1.4 A
IB2 ≈ –2.5 A, fH = 31.5 kHz
———————————————————————————————————————————
Area of Safe Operation
80
I C (A)
20
60
Collector Current
Collector Power Dissipation
Pc (W)
Maximum Collector Power Dissipation Curve
40
20
16
(100 V, 20 A)
f = 15.75 kHz
Ta = 25 °C
For picture tube arcing
12
8
4
(800 V, 4 A)
0.5 mA
0
50
100
Case Temperature
150
Tc (°C)
200
0
800
1200 1600 2000
400
Collector to Emitter Voltage V CE (V)
2SC4877
DC Current Transfer Ratio
vs. Collector Current
Typical Output Characteristics
h FE
W
0.6 A
5
0.4 A
0.2 A
Tc = 25 °C
0
IB = 0
25°C
10
5
Tc = –25°C
2
V CE = 5 V
0.2
0.5
1
Collector Current
2
5
I C (A)
10
Base to Emitter Saturation Voltage
vs. Collector Current
10
IC / I B = 5
Base to Emitter Saturetion Voltage
V BE(sat) (V)
Collector to Emitter Saturation Voltage
V CE(sat) (V)
Collector to Emitter Saturation Voltage
vs. Collector Current
2
1
0.5
25 °C Tc = –25 °C
0.2 75 °C
0.1
0.05
0.1
75°C
20
1
0.1
5
10
Collector to Emitter Voltage V CE (V)
5
50
50
I C (A)
=
Collector Current
100
Pc
2 A .8 A
1
1.6 A
1.4 A
1.2 A
1.0 A
0.8 A
DC Current Transfer Ratio
10
0.2
0.5
1
2
5
Collector Current I C (A)
10
5
2
Tc = –25 °C
1
0.5
25 °C
75 °C
0.2
I C / IB = 5
0.1
0.2
0.5
1
2
5
Collector Current I C (A)
10
2SC4877
Collector to Emitter Saturation Voltage
V CE(sat) (V)
Collector to Emitter Saturation Voltage
vs. Base Current
10
5
Tc = 25 °C
IC = 4 A
0
0.1
0.2
6A
0.5
1
Base Current
8A
2
5
I B (A)
10