2SC5132A Silicon NPN Triple Diffused Planar Application TO–3PFM (N) Character display horizontal deflection output Features • High breakdown voltage VCES = 1500 V, IC = 8 A • Built–in damper diode type • Isolated package TO-3P•FM C B 1 1. Base 2. Collector 3. Emitter 2 3 E Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Collector to emitter voltage VCES 1500 V ——————————————————————————————————————————— Emitter to base voltage VEBO 6 V ——————————————————————————————————————————— Collector current IC 8 A ——————————————————————————————————————————— Collector surge current ic(surge) 16 A ——————————————————————————————————————————— Collector power dissipation PC*1 50 W ——————————————————————————————————————————— Junction temperature Tj 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— Diode current ID 6 A ——————————————————————————————————————————— Note: 1. Value at Tc = 25°C 2SC5132A Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Emitter to base breakdown voltage V(BR)EBO 6 — — V IE = 400 mA, IC = 0 ——————————————————————————————————————————— Collector cutoff current ICES — — 500 µA VCE = 1500 V, RBE = 0 ——————————————————————————————————————————— DC current transfer ratio hFE — — 25 — VCE = 5 V, IC = 1 A ——————————————————————————————————————————— Collector to emitter saturation voltage VCE(sat) — — 5 V IC = 5 A, IB = 1.25 A ——————————————————————————————————————————— Base to emitter saturation voltage VBE(sat) — — 1.5 V IC = 5 A, IB = 1.25 A ——————————————————————————————————————————— Forward voltage of damper diode VECF — — 2.0 V IF = 6 A ——————————————————————————————————————————— Fall time tf — 0.2 0.4 µsec ICP = 5 A, IB1 = 1 A, fH = 31.5kHz ——————————————————————————————————————————— Area of Safe Operation 80 20 (100 V, 16 A) I C (A) 60 Collector Current Collector Power Dissipation Pc (W) Maximum Collector Power Dissipation Curve 40 20 f = 15.75 kHz Ta = 25 °C For picture tube arcing 10 (800 V, 3 A) 0.5 mA 0 50 100 Case Temperature 150 Tc (°C) 200 0 800 1200 1600 2000 400 Collector to Emitter Voltage V CE (V) 2SC5132A DC Current Transfer Ratio vs. Collector Curret Typical Output Charactristics A 0 0.8 A 100 0.7 A 0.6 A 0.5 A 0.4 A h FE 3 1.0 .9 A DC Current Transfer Ratio I C (A) 4 Collector Current 5 0.3 A 0.2 A 2 0.1 A 1 Tc = 25 °C 0 IB=0 5 10 Collector to Emitter Voltage V CE (V) 50 20 5 2 1 0.1 VCE = 5 V 0.2 0.5 1 Collector Current 2 5 I C (A) 10 Base to Emitter Saturation Voltage vs. Collector current Base to Emitter Saturetion Voltage V BE(sat) (V) Collector to Emitter Saturation Voltage V CE(sat) (V) IC / I B= 4 1 0.5 Tc = –25 °C 25 °C 75 °C 5 I C/ I B= 4 2 Tc = –25°C 1 0.5 75 °C 25 °C 0.2 0.1 0.05 0.1 Tc = –25 °C 10 2 0.2 75 °C 10 Collector to Emitter Saturation Voltage vs. Collector Current 5 25 °C 0.2 0.5 1 2 5 Collector Current I C (A) 10 0.1 0.2 0.5 1 2 5 Collector Current I C (A) 10 2SC5132A Collector to Emitter Saturation Voltage vs. Base Current Tc = 25 °C 6A 0.5 1 Base Current 2 5 I B (A) 10 Package Outline φ 3.2 5.8 Max 19.9 ± 0.3 16.0 Max 4.0 2.6 1.6 1.4 Max 1.4 Max 21.0 ± 0.5 0.2 5A 5.0 ± 0.3 0 0.1 I C= 4 A 5.0 5 2.7 Collector to Emitter Saturation Voltage V CE(sat) (V) 10 3.2 0.6 ± 0.2 1.0 ± 0.2 5.45 ± 0.5 5.45 ± 0.5