2SK1215 Silicon N-Channel MOS FET Application VHF amplifier Outline CMPAK 3 1 2 1. Gate 2. Drain 3. Source 2SK1215 Absolute Maximum Ratings (Ta = 25°C) Item Symbol 1 Ratings Unit 20 V Drain to source voltage VDSX* Gate to source voltage VGSS ±5 V Drain current ID 30 mA Gate current IG ±1 mA Channel power dissipation Pch 100 mW Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. VGS = –4 V Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown voltage V(BR)DSX 20 — — V I D = 100 µA, VGS = –4 V Gate cutoff current I GSS — — ±20 nA VGS = ±5 V, VDS = 0 4 — 12 mA VDS = 10 V, VGS = 0 1 Drain current I DSS* Gate to source cutoff voltage VGS(off) 0 — –2.0 V VDS = 10 V, ID = 10 µA Forward transfer admittance |yfs| 8 14 — mS VDS = 10 V, VGS = 0, f = 1 kHz Input capacitance Ciss — 2.5 — pF VDS = 10 V, VGS = 0, f = 1 MHz Output capacitance Coss — 1.6 — pF Reverse transfer capacitance Crss — 0.03 — pF Power gain PG 24 — — dB Noise figure NF — — 3 dB Note: 1. The 2SK1215 is grouped by I DSS as follows. Grade D E F Mark IGD IGE IGF I DSS 4 to 8 6 to 10 8 to 12 See characteristic curves of 2SK359. 2 VDS = 10 V, VGS = 0, f = 100 MHz 0.1 0.3 +– 0.05 0.2 0.65 0.65 1.3 ± 0.2 0.9 ± 0.1 0.1 0.3 +– 0.05 0.1 0.16 +– 0.06 0 – 0.1 0.425 1.25 ± 0.1 0.1 0.3 +– 0.05 2.1 ± 0.3 2.0 ± 0.2 0.425 Unit: mm Hitachi Code JEDEC EIAJ Weight (reference value) CMPAK — Conforms 0.006 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. 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Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.