2SK1764 Silicon N-Channel MOS FET Application Low frequency amplifier High speed switching Features • • • • Low on-resistance High speed switching 4 V Gate drive device can be driven from 5 V source Suitable for switchingregulator, DC-DC converter Outline UPAK 3 2 1 4 D 1. Gate 2. Drain 3. Source 4. Drain G S 2SK1764 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 60 V Gate to source voltage VGSS ±20 V Drain current ID 2 A 4 A 4 A Drain peak current I D(pulse)* Body to drain diode reverse drain current I DR 1 2 Channel power dissipation Pch* 1 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes 1. PW ≤ 100 µs, duty cycle ≤ 10 % 2. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm) 3. Marking is "KY". Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 60 — — V I D = 10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS ±20 — — V I G = ±100 µA, VDS = 0 Gate to source cutoff voltage VGS(off) 1 — 2 V VDS = 10 V, ID = 1 mA Drain to source cutoff current I DSS — — 10 µA VDS = 50 V, VGS = 0 Gate to source cutoff current I GSS — — ±5 µA VGS = ±15 V, VDS = 0 Static drain to source on state resistance RDS(on)1 — 0.3 0.45 Ω VGS = 10 V I D = 1 A*1 Static drain to source on state resistance RDS(on)2 — 0.4 0.60 Ω VGS = 4 V I D = 1 A*1 Forward transfer admittance |yfs| 0.9 1.7 — S VDS = 10 V I D = 1 A*1 Input capacitance Ciss — 140 — pF VDS = 10 V Output capacitance Coss — 75 — pF VGS = 0 Reverse transfer capacitance Crss — 20 — pF f = 1 MHz Turn on time t on — 18 — ns VDS = 10 V, ID = 1 A*1 Turn off time t off — 80 — ns RL = 30 Ω Note 1. Pulse Test See characteristics curves of 2SK975 2 2SK1764 Safe Operation Area 10 Drain Current D C ) ot sh (1 0.1 s 0.3 ) in on n S( io s at a i R D r pe re y O is a d b th ite lim s 0.4 1m 0.8 1.0 m 10 1.2 3 = ID (A) 1.6 PW Channel Power Dissipation Pch** (W) (** on the almina ceramic board) Maximum Channel Power Dissipation Curve op er at io n 0.03 0 50 100 150 200 Ambient Temperature Ta (°C) Ta = 25°C 0.01 10 1.0 3 30 100 0.1 0.3 Drain to Source Voltage VDS (V) 3 Unit: mm 1.5 1.5 3.0 0.44 Max Hitachi Code JEDEC EIAJ Weight (reference value) (0.2) (2.5) (1.5) (0.4) 0.53 Max 0.48 Max 1.5 ± 0.1 0.44 Max 2.5 ± 0.1 4.25 Max φ1 0.8 Min 1.8 Max 0.4 4.5 ± 0.1 UPAK — Conforms 0.050 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. 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