HITACHI 2SK1764

2SK1764
Silicon N-Channel MOS FET
Application
Low frequency amplifier
High speed switching
Features
•
•
•
•
Low on-resistance
High speed switching
4 V Gate drive device can be driven from 5 V source
Suitable for switchingregulator, DC-DC converter
Outline
UPAK
3
2 1
4
D
1. Gate
2. Drain
3. Source
4. Drain
G
S
2SK1764
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
60
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
2
A
4
A
4
A
Drain peak current
I D(pulse)*
Body to drain diode reverse drain current
I DR
1
2
Channel power dissipation
Pch*
1
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes 1. PW ≤ 100 µs, duty cycle ≤ 10 %
2. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm)
3. Marking is "KY".
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V(BR)DSS
60
—
—
V
I D = 10 mA, VGS = 0
Gate to source breakdown
voltage
V(BR)GSS
±20
—
—
V
I G = ±100 µA, VDS = 0
Gate to source cutoff voltage
VGS(off)
1
—
2
V
VDS = 10 V, ID = 1 mA
Drain to source cutoff current
I DSS
—
—
10
µA
VDS = 50 V, VGS = 0
Gate to source cutoff current
I GSS
—
—
±5
µA
VGS = ±15 V, VDS = 0
Static drain to source on state
resistance
RDS(on)1
—
0.3
0.45
Ω
VGS = 10 V
I D = 1 A*1
Static drain to source on state
resistance
RDS(on)2
—
0.4
0.60
Ω
VGS = 4 V
I D = 1 A*1
Forward transfer admittance
|yfs|
0.9
1.7
—
S
VDS = 10 V
I D = 1 A*1
Input capacitance
Ciss
—
140
—
pF
VDS = 10 V
Output capacitance
Coss
—
75
—
pF
VGS = 0
Reverse transfer capacitance
Crss
—
20
—
pF
f = 1 MHz
Turn on time
t on
—
18
—
ns
VDS = 10 V, ID = 1 A*1
Turn off time
t off
—
80
—
ns
RL = 30 Ω
Note
1. Pulse Test
See characteristics curves of 2SK975
2
2SK1764
Safe Operation Area
10
Drain Current
D
C
)
ot
sh
(1
0.1
s
0.3
)
in
on
n
S(
io s
at a i R D
r
pe re y
O is a d b
th ite
lim
s
0.4
1m
0.8
1.0
m
10
1.2
3
=
ID (A)
1.6
PW
Channel Power Dissipation Pch** (W)
(** on the almina ceramic board)
Maximum Channel Power
Dissipation Curve
op
er
at
io
n
0.03
0
50
100
150
200
Ambient Temperature Ta (°C)
Ta = 25°C
0.01
10
1.0
3
30 100
0.1 0.3
Drain to Source Voltage VDS (V)
3
Unit: mm
1.5 1.5
3.0
0.44 Max
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
(0.2)
(2.5)
(1.5)
(0.4)
0.53 Max
0.48 Max
1.5 ± 0.1
0.44 Max
2.5 ± 0.1
4.25 Max
φ1
0.8 Min
1.8 Max
0.4
4.5 ± 0.1
UPAK
—
Conforms
0.050 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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