H5N0301SM Silicon N Channel Power MOS FET Power Switching ADE-208-954 (Z) 1st. Edition Dec. 2000 Features • • • • Low on-resistance Low drive current High density mounting 2.5 V gate drive device Outline SMPAK 3 1 2 D 1. Source 2. Gate 3. Drain G S H5N0301SM Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 30 V Gate to source voltage VGSS ±10 V Drain current ID 50 mA 200 mA 100 mW Drain peak current I D(pulse) Note 1 Note 2 Channel dissipation Pch (pulse) Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm) Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 30 — — V I D = 100 µA, VGS = 0 Gate to source breakdown voltage V(BR)GSS ±10 — — V I G = ±10 µA, VDS = 0 Gate to source leak current I GSS — — ±5 µA VGS = ±8 V, V DS = 0 Zero gate voltege drain current I DSS — — 1 µA VDS = 30 V, VGS = 0 Gate to source cutoff voltage VGS(off) 0.8 — 1.8 V I D = 10 µA, VDS = –5 V Static drain to source on state RDS(on) — 6 7.2 Ω I D =25m A, VGS =4 V Note 1 — 9 13 Ω I D =10mA,VGS =2.5 V Note 1 resistance Forward transfer admittance |yfs| 65 85 — mS I D =25mA,,VDS=10 V Note 1 Input capacitance Ciss — 12 — pF VDS = 10 V Output capacitance Coss — 8 — pF VGS = 0 Reverse transfer capacitance Crss — 3 — pF f = 1 MHz Turn-on delay time t d(on) — 40 — ns VGS = 4 V, ID = 25m A Rise time tr — 115 — ns RL = 400 Ω Turn-off delay time t d(off) — 120 — ns Fall time tf — 125 — ns Body–drain diode forward voltage VDF — 0.82 1.23 V Note: 2 1. Pulse test I F = 50m A, VGS = 0 Note 1 H5N0301SM Main Characteristics Power vs. Temperature Derating Channel Dissipation Pch (mW) 300 Value on the alumina ceramic board. (12.5 x 20 x 0.7 mm) 200 100 50 0 50 100 150 200 Ambient Temperature Ta (°C) 3 H5N0301SM Package Dimensions As of January, 2001 Unit: mm 1.6 ± 0.2 +0.1 0.3 –0.05 +0.1 3 2 +0.1 1 1.6 ± 0.2 0.4 0.8 ± 0.1 0.4 0.15 –0.05 0 – 0.1 +0.1 0.2 –0.05 0.55 0.5 0.5 1.0 ± 0.1 0.7 ± 0.1 0.2 –0.05 Hitachi Code JEDEC EIAJ Mass (reference value) 4 SMPAK — Conforms 0.003 g H5N0301SM Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica Europe Asia Japan : : : : http://semiconductor.hitachi.com/ http://www.hitachi-eu.com/hel/ecg http://sicapac.hitachi-asia.com http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic Components Group Dornacher Stra§e 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00, Singapore 049318 Tel : <65>-538-6533/538-8577 Fax : <65>-538-6933/538-3877 URL : http://www.hitachi.com.sg Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585160 Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road, Hung-Kuo Building, Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon, Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://www.hitachi.com.hk Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan. Colophon 2.0 5