2SK439 Silicon N-Channel MOS FET Application VHF amplifier Outline SPAK 1 23 1. Gate 2. Source 3. Drain 2SK439 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDS 20 V Gate to source voltage VGSS ±5 V Drain current ID 30 mA Gate current IG ±1 mA Channel power dissipation Pch 300 mW Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown voltage V(BR)DSX 20 — — V I D = 100 µA, VGS = –4 V Gate cutoff current I GSS — — ±20 nA VGS = ±5 V, VDS = 0 4 — 12 mA VDS = 10 V, VGS = 0 1 Drain current I DSS* Gate to source cutoff voltage VGS(off) 0 — –2.0 V VDS = 10 V, ID = 10 µA Forward transfer admittance y fs 8 14 — mS VDS = 10 V, VGS = 0, f = 1 kHz Input capacitance Ciss — 2.5 — pF VDS = 10 V, VGS = 0, f = 1 MHz Reverse transfer capacitance Crss — 0.03 — pF Output capacitance Coss — 1.8 — pF VDS = 5 V, VGS = 0, f = 1 MHz Power gain PG — 30 — dB VDS = 10 V, VGS = 0, f = 100 MHz Noise figure NF — 2.0 — dB Note: 1. The 2SK439 is grouped by I DSS as follows. Grade D E F I DSS 4 to 8 6 to 10 8 to 12 See characteristic curves of 2SK359. 2 2SK439 Channel Power Dissipation Pch (mW) Maximum Channel Dissipation Curve 300 200 100 0 50 100 150 Ambient Temperature Ta (°C) 3 Unit: mm 2.2 Max 0.6 0.6 Max 0.45 ± 0.1 14.5 Min 1.8 Max 3.2 Max 4.2 Max 0.4 ± 0.1 1.27 1.27 2.54 Hitachi Code JEDEC EIAJ Weight (reference value) SPAK — — 0.10 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. 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