HITACHI 2SK439

2SK439
Silicon N-Channel MOS FET
Application
VHF amplifier
Outline
SPAK
1
23
1. Gate
2. Source
3. Drain
2SK439
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDS
20
V
Gate to source voltage
VGSS
±5
V
Drain current
ID
30
mA
Gate current
IG
±1
mA
Channel power dissipation
Pch
300
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V(BR)DSX
20
—
—
V
I D = 100 µA, VGS = –4 V
Gate cutoff current
I GSS
—
—
±20
nA
VGS = ±5 V, VDS = 0
4
—
12
mA
VDS = 10 V, VGS = 0
1
Drain current
I DSS*
Gate to source cutoff voltage
VGS(off)
0
—
–2.0
V
VDS = 10 V, ID = 10 µA
Forward transfer admittance
y fs
8
14
—
mS
VDS = 10 V, VGS = 0, f = 1 kHz
Input capacitance
Ciss
—
2.5
—
pF
VDS = 10 V, VGS = 0, f = 1 MHz
Reverse transfer capacitance
Crss
—
0.03
—
pF
Output capacitance
Coss
—
1.8
—
pF
VDS = 5 V, VGS = 0, f = 1 MHz
Power gain
PG
—
30
—
dB
VDS = 10 V, VGS = 0,
f = 100 MHz
Noise figure
NF
—
2.0
—
dB
Note:
1. The 2SK439 is grouped by I DSS as follows.
Grade
D
E
F
I DSS
4 to 8
6 to 10
8 to 12
See characteristic curves of 2SK359.
2
2SK439
Channel Power Dissipation Pch (mW)
Maximum Channel Dissipation Curve
300
200
100
0
50
100
150
Ambient Temperature Ta (°C)
3
Unit: mm
2.2 Max
0.6
0.6 Max
0.45 ± 0.1
14.5 Min
1.8 Max
3.2 Max
4.2 Max
0.4 ± 0.1
1.27 1.27
2.54
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
SPAK
—
—
0.10 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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