HITACHI 4AJ11

4AJ11
Silicon P-Channel Power MOS FET Array
Application
High speed power switching
Features
• Low on-resistance
R DS(on) 0.13 , VGS = –10 V, I D = –4 A
R DS(on) 0.17 , VGS = –4 V, I D = –4 A
• Capable of 4 V gate drive
• Low drive current
• High speed switching
• High density mounting
• Suitable for motor driver and solenoid driver and lamp driver
4AJ11
Outline
SP-12
12
1
G
2
D
5
G
S 3
4
D
8
G
S 6
9
D
11
D
12
G
S 7
34
56
78
9 10
1112
1, 5, 8, 12. Gate
2, 4, 9, 11. Drain
3, 6, 7, 10. Source
S 10
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
–60
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
–8
A
–32
A
–8
A
28
W
Drain peak current
I D(pulse)*
Body to drain diode reverse drain current
I DR
Channel dissipation
1
Pch (Tc = 25°C)*
2
2
Channel dissipation
Pch*
4
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. 4 Devices operation
2
4AJ11
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V(BR)DSS
–60
—
—
V
I D = –10 mA, VGS = 0
Gate to source breakdown
voltage
V(BR)GSS
±20
—
—
V
I G = ±100 µA, VDS = 0
Gate to source leak current
I GSS
—
—
±10
µA
VGS = ±16 V, VDS = 0
Zero gate voltage drain current I DSS
—
—
–250
µA
VDS = –50 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
–1.0
—
–2.0
V
I D = –1 mA, VDS = –10 V
Static drain to source on state
resistance
RDS(on)
—
0.09
0.13
Ω
I D = –4 A
VGS = –10 V*1
—
0.12
0.17
Ω
I D = –4 A
VGS = –4 V*1
Forward transfer admittance
|yfs|
5.5
7.7
—
S
I D = –4 A
VDS = –10 V*1
Input capacitance
Ciss
—
1400
—
pF
VDS = –10 V
Output capacitance
Coss
—
720
—
pF
VGS = 0
Reverse transfer capacitance
Crss
—
220
—
pF
f = 1 MHz
Turn-on delay time
t d(on)
—
15
—
ns
I D = –8 A
Rise time
tr
—
120
—
ns
VGS = –10 V
Turn-off delay time
t d(off)
—
220
—
ns
RL = 3.75 Ω
Fall time
tf
—
160
—
ns
Body to drain diode forward
voltage
VDF
—
–1.05
—
V
I F = –8 A, VGS = 0
Body to drain diode reverse
recovery time
t rr
—
190
—
µs
I F = –8 A, VGS = 0,
dIF/dt = 50 A/µs
Note:
1. Pulse Test
3
4AJ11
4 Device Operation
2 Device Operation
1 Device Operation
2
0
4
3 Device Operation
50
100
150
Ambient Temperature Ta (°C)
Pch (W)
4
Condition : Channel dissipation of
each die is is idetical
Maximum Channel Dissipation Curve
30
Collector Power Dissipation
Pch (W)
Collector Power Dissipation
Maximum Channel Dissipation Curve
6
20
Condition : Channel dissipation of
each die is is idetical
4 Device Operation
3 Device Operation
2 Device Operation
1 Device Operation
10
0
50
100
Case Temperature Tc (°C)
150
Unit: mm
4.0 ± 0.2
0.85 ± 0.1
1
2
3
1.4
4
5
6
7
2.54
8
9
10
11
10.5 ± 0.5
2.7
10.0 ± 0.3
31.0 ± 0.3
1.5 ± 0.2
+0.1
0.55 –0.06
12
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
SP-12
—
—
3.6 g
Cautions
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contact Hitachi’s sales office before using the product in an application that demands especially high
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4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
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failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
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