4AJ11 Silicon P-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS(on) 0.13 , VGS = –10 V, I D = –4 A R DS(on) 0.17 , VGS = –4 V, I D = –4 A • Capable of 4 V gate drive • Low drive current • High speed switching • High density mounting • Suitable for motor driver and solenoid driver and lamp driver 4AJ11 Outline SP-12 12 1 G 2 D 5 G S 3 4 D 8 G S 6 9 D 11 D 12 G S 7 34 56 78 9 10 1112 1, 5, 8, 12. Gate 2, 4, 9, 11. Drain 3, 6, 7, 10. Source S 10 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS –60 V Gate to source voltage VGSS ±20 V Drain current ID –8 A –32 A –8 A 28 W Drain peak current I D(pulse)* Body to drain diode reverse drain current I DR Channel dissipation 1 Pch (Tc = 25°C)* 2 2 Channel dissipation Pch* 4 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. 4 Devices operation 2 4AJ11 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown voltage V(BR)DSS –60 — — V I D = –10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS ±20 — — V I G = ±100 µA, VDS = 0 Gate to source leak current I GSS — — ±10 µA VGS = ±16 V, VDS = 0 Zero gate voltage drain current I DSS — — –250 µA VDS = –50 V, VGS = 0 Gate to source cutoff voltage VGS(off) –1.0 — –2.0 V I D = –1 mA, VDS = –10 V Static drain to source on state resistance RDS(on) — 0.09 0.13 Ω I D = –4 A VGS = –10 V*1 — 0.12 0.17 Ω I D = –4 A VGS = –4 V*1 Forward transfer admittance |yfs| 5.5 7.7 — S I D = –4 A VDS = –10 V*1 Input capacitance Ciss — 1400 — pF VDS = –10 V Output capacitance Coss — 720 — pF VGS = 0 Reverse transfer capacitance Crss — 220 — pF f = 1 MHz Turn-on delay time t d(on) — 15 — ns I D = –8 A Rise time tr — 120 — ns VGS = –10 V Turn-off delay time t d(off) — 220 — ns RL = 3.75 Ω Fall time tf — 160 — ns Body to drain diode forward voltage VDF — –1.05 — V I F = –8 A, VGS = 0 Body to drain diode reverse recovery time t rr — 190 — µs I F = –8 A, VGS = 0, dIF/dt = 50 A/µs Note: 1. Pulse Test 3 4AJ11 4 Device Operation 2 Device Operation 1 Device Operation 2 0 4 3 Device Operation 50 100 150 Ambient Temperature Ta (°C) Pch (W) 4 Condition : Channel dissipation of each die is is idetical Maximum Channel Dissipation Curve 30 Collector Power Dissipation Pch (W) Collector Power Dissipation Maximum Channel Dissipation Curve 6 20 Condition : Channel dissipation of each die is is idetical 4 Device Operation 3 Device Operation 2 Device Operation 1 Device Operation 10 0 50 100 Case Temperature Tc (°C) 150 Unit: mm 4.0 ± 0.2 0.85 ± 0.1 1 2 3 1.4 4 5 6 7 2.54 8 9 10 11 10.5 ± 0.5 2.7 10.0 ± 0.3 31.0 ± 0.3 1.5 ± 0.2 +0.1 0.55 –0.06 12 Hitachi Code JEDEC EIAJ Weight (reference value) SP-12 — — 3.6 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. 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