2SK1307 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-220FM D 1 2 3 1. Gate 2. Drain 3. Source G S 2SK1307 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 100 V Gate to source voltage VGSS ±20 V Drain current ID 20 A 80 A 20 A Drain peak current I D(pulse)* Body to drain diode reverse drain current I DR 2 1 Channel dissipation Pch* 35 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C 2 2SK1307 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown voltage V(BR)DSS 100 — — V I D = 10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS ±20 — — V I G = ±100 µA, VDS = 0 Gate to source leak current I GSS — — ±10 µA VGS = ±16 V, VDS = 0 Zero gate voltage drain current I DSS — — 250 µA VDS = 80 V, VGS = 0 Gate to source cutoff voltage VGS(off) 1.0 — 2.0 V I D = 1 mA, VDS = 10 V Static drain to source on state resistance RDS(on) — 0.065 0.085 Ω I D = 10 A, VGS = 10 V *1 — 0.085 0.12 Ω I D = 10 A, VGS = 4 V *1 Forward transfer admittance |yfs| 10 16 — S I D = 10 A, VDS = 10 V *1 Input capacitance Ciss — 1300 — pF VDS = 10 V, VGS = 0, Output capacitance Coss — 540 — pF f = 1 MHz Reverse transfer capacitance Crss — 160 — pF Turn-on delay time t d(on) — 12 — ns I D = 10 A, VGS = 10 V, Rise time tr — 100 — ns RL = 3 Ω Turn-off delay time t d(off) — 300 — ns Fall time tf — 150 — ns Body to drain diode forward voltage VDF — 1.3 — V I F = 20 A, VGS = 0 Body to drain diode reverse recovery time t rr — 300 — ns I F = 20 A, VGS = 0, diF/dt = 50 A/µs Note: 1. Pulse test See characteristic curves of 2SK1302. 3 2SK1307 Power vs. Temperature Derating Maximum Safe Operation Area 100 s pe m O (1 ra 1.0 25 ) °C Operation in this Area is Limited by RDS (on) t) = (T C o Sh n tio Drain Current ID (A) µs 10 C 3 µs s m = 10 D 20 0 1 40 10 10 30 PW Channel Dissipation Pch (W) 60 0.3 Ta = 25°C 0.1 Normalized Transient Thermal Impedance γS (t) 0 4 50 100 Case Temperature TC (°C) 150 1 10 100 300 1,000 3 30 Drain to Source Voltage VDS (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 TC = 25°C 1.0 D=1 0.5 0.3 0.2 θch–c (t) = γS (t) · θch–c θch–c = 3.57°C/W, TC = 25°C 0.1 0.1 0.05 PDM 0.03 0.02 0.01 ulse P hot 1S 0.01 10 µ PW D = PW T T 100 µ 1m 10 m Pulse Width PW (s) 100 m 1 10 10.0 ± 0.3 2.8 ± 0.2 7.0 ± 0.3 φ 3.2 ± 0.2 Unit: mm 0.7 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 4.45 ± 0.3 2.5 14.0 ± 1.0 5.0 ± 0.3 1.2 ± 0.2 1.4 ± 0.2 2.0 ± 0.3 12.0 ± 0.3 17.0 ± 0.3 0.6 2.5 ± 0.2 0.5 ± 0.1 Hitachi Code JEDEC EIAJ Weight (reference value) TO-220FM — Conforms 1.8 g Cautions 1. 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