2SK1775 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Outline TO-3PFM D G 1 S 2 3 1. Gate 2. Drain 3. Source 2SK1775 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 900 V Gate to source voltage VGSS ±30 V Drain current ID 8 A 20 A 8 A Drain peak current I D(pulse)* Body to drain diode reverse drain current I DR 2 1 Channel dissipation Pch* 60 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25 °C 2 2SK1775 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 900 — — V I D = 10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS ±30 — — V I G = ±100 µA, VDS = 0 Gate to source leak current I GSS — — ±10 µA VGS = ±25 V, VDS = 0 Zero gate voltage drain current I DSS — — 250 µA VDS = 720 V, VGS = 0 Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V I D = 1 mA, VDS = 10 V Static drain to source on state resistance RDS(on) — 1.2 1.6 Ω ID = 4 A VGS = 10 V*1 Forward transfer admittance |yfs| 3.5 5.5 — S ID = 4 A VDS = 20 V*1 Input capacitance Ciss — 1730 — pF VDS = 10 V Output capacitance Coss — 700 — pF VGS = 0 Reverse transfer capacitance Crss — 310 — pF f = 1 MHz Turn-on delay time t d(on) — 25 — ns ID = 4 A Rise time tr — 135 — ns VGS = 10 V Turn-off delay time t d(off) — 185 — ns RL = 7.5 Ω Fall time tf — 130 — ns Body to drain diode forward voltage VDF — 0.9 — V I F = 8 A, VGS = 0 Body to drain diode reverse recovery time t rr — 900 — ns I F = 8 A, VGS = 0, diF / dt = 100 A / µs Note 1. Pulse Test See characteristic curves of 2SK1342 3 2SK1775 Power vs. Temperature Derating Maximum Safe Operation Area 50 30 Drain Current I D (A) Channel Dissipation Pch (W) 90 60 30 10 n) 10 n io is (o 10 at rea S r 0 PW µs pe a R D 1 O this by = D m d C n 1 s i ite 0 O m pe lim s ra (1 tio Sh n ot (T ) c = 25 °C ) 3 1 0.3 0.1 µs Ta = 25°C 0.05 0 50 100 150 1 Normalized Transient Thermal Impedance γS (t) 10 100 300 1000 30 Drain to Source Voltage VDS (V) Case Temperature Tc (°C) 4 3 Normalized Transient Thermal Impedance vs. Pulse Width 3 1.0 TC = 25°C D=1 0.5 0.3 0.2 θch–c (t) = γS (t) · θch–c θch–c = 2.08°C/W, TC = 25°C 0.1 0.1 0.03 0.01 10 µ 0.05 PDM 0.02 0.01 ulse ot P 1 Sh 100 µ T 1m 10 m Pulse Width PW (s) 100 m PW 1 D = PW T 10 15.6 ± 0.3 5.5 ± 0.3 5.0 1.6 1.4 Max 3.2 21.0 ± 0.5 4.0 2.6 1.4 Max 2.7 19.9 ± 0.3 φ3.2 + 0.4 – 0.2 5.0 ± 0.3 Unit: mm 1.0 ± 0.2 5.45 ± 0.5 0.6 ± 0.2 5.45 ± 0.5 Hitachi Code JEDEC EIAJ Weight (reference value) TO-3PFM — — 5.6 g Cautions 1. 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