HITACHI HD74HC640

HD74HC640/HD74HC643
Octal Bus Transceivers (with 3-state outputs)
Description
Each device has an active enable G and a direction control input, DIR. when DIR is high, data flows from
the A inputs to the B outputs. When DIR is low, data flows from the B inputs to the A outputs. The
HD74HC640 transfers inverted data from one bus to other and the HD74HC643 transfers inverted data
from the A bus to the B bus and true data from the B bus to the A bus.
Features
•
•
•
•
•
High Speed Operation: tpd = 12 ns typ (CL = 50 pF)
High Output Current: Fanout of 15 LSTTL Loads
Wide Operating Voltage: VCC = 2 to 6 V
Low Input Current: 1 µA max
Low Quiescent Supply Current: ICC (static) = 4 µA max (Ta = 25°C)
Function Table
Control Inputs
Operation
G
DIR
HD74HC640
HD74HC643
L
L
B data to A bus
B data to A bus
L
H
A data to B bus
A data to B bus
H
X
Isolation
Isolation
HD74HC640/HD74HC643
Pin Arrangement
HD74HC640
DIR
1
20 VCC
A1
2
19 Enable G
A2
3
18 B1
A3
4
17 B2
A4
5
16 B3
A5
6
15 B4
A6
7
14 B5
A7
8
13 B6
A8
9
12 B7
GND 10
11 B8
(Top View)
2
HD74HC640/HD74HC643
HD74HC643
DIR
1
20 VCC
A1
2
19 Enable G
A2
3
18 B1
A3
4
17 B2
A4
5
16 B3
A5
6
15 B4
A6
7
14 B5
A7
8
13 B6
A8
9
12 B7
GND 10
11 B8
(Top View)
Absolute Maximum Ratings
Item
Symbol
Rating
Unit
Supply voltage range
VCC
–0.5 to +7.0
V
Input voltage
VIN
–0.5 to VCC + 0.5
V
Output voltage
VOUT
–0.5 to VCC + 0.5
V
Output current
I OUT
±35
mA
DC current drain per VCC , GND
I CC, I GND
±75
mA
DC input diode current
I IK
±20
mA
DC output diode current
I OK
±20
mA
Power Dissipation per package
PT
500
mW
Storage temperature
Tstg
–65 to +150
°C
3
HD74HC640/HD74HC643
Block Diagram
HD74HC640
G
DIR
VCC
A
B
VCC
To 7 Other
Inverters
4
To 7 Other
Inverters
HD74HC640/HD74HC643
HD74HC643
G
DIR
VCC
A
B
VCC
To 7 Other
Inverters
To 7 Other
Inverters
5
HD74HC640/HD74HC643
DC Characteristics
Ta = –40 to
+85°C
Ta = 25°C
Item
Symbol
VCC (V) Min Typ Max Min
Max
Unit
Input voltage
VIH
2.0
1.5 —
—
1.5
—
V
4.5
3.15 —
—
3.15
—
6.0
4.2 —
—
4.2
—
2.0
—
—
0.3
—
0.3
4.5
—
—
1.35 —
1.35
6.0
—
—
1.8
—
1.8
2.0
1.9 2.0 —
1.9
—
4.5
4.4 4.5 —
4.4
—
6.0
5.9 6.0 —
5.9
—
4.5
4.18 —
—
4.13
—
I OH = –6 mA
6.0
5.68 —
—
5.63
—
I OH = –7.8 mA
2.0
—
0.0 0.1
—
0.1
4.5
—
0.0 0.1
—
0.1
6.0
—
0.0 0.1
—
0.1
4.5
—
—
0.26 —
0.33
I OL = 6 mA
6.0
—
—
0.26 —
0.33
I OL = 7.8 mA
VIL
Output voltage
VOH
VOL
Test Conditions
V
V
V
Vin = VIH or VIL I OH = –20 µA
Vin = VIH or VIL I OL = 20 µA
Off-state output
current
I OZ
6.0
—
—
±0.5 —
±5.0
µA
Vin = VIH or VIL,
Vout = VCC or GND
Input current
Iin
6.0
—
—
±0.1 —
±1.0
µA
Vin = VCC or GND
Quiescent supply
current
I CC
6.0
—
—
4.0
40
µA
Vin = VCC or GND, Iout = 0 µA
6
—
HD74HC640/HD74HC643
AC Characteristics (CL = 50 pF, Input tr = tf = 6 ns)
Ta = –40 to
+85°C
Ta = 25°C
VCC (V) Min Typ Max Min
Max
Unit
Propagation delay t PLH
2.0
—
—
90
—
115
ns
time
4.5
—
12
18
—
23
6.0
—
—
15
—
20
Item
Symbol
t PHL
Output enable
t ZH
2.0
—
—
230 —
290
time
t ZL
4.5
—
15
46
—
58
6.0
—
—
39
—
49
Output disable
t HZ
2.0
—
—
215 —
270
time
t LZ
4.5
—
17
43
—
54
6.0
—
—
37
—
46
Output rise/fall
t TLH
2.0
—
—
60
—
75
time
t THL
4.5
—
4
12
—
15
6.0
—
—
10
—
13
—
—
5
10
—
10
Input capacitance
Cin
Test Conditions
ns
ns
ns
pF
7
Unit: mm
24.50
25.40 Max
6.30
11
1
7.00 Max
20
10
1.30
2.54 ± 0.25
0.48 ± 0.10
0.51 Min
1.27 Max
2.54 Min 5.08 Max
0.89
7.62
+ 0.11
0.25 – 0.05
0° – 15°
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
DP-20N
—
Conforms
1.26 g
Unit: mm
12.6
13 Max
11
1
10
1.27
*0.42 ± 0.08
0.40 ± 0.06
0.10 ± 0.10
0.80 Max
*0.22 ± 0.05
0.20 ± 0.04
2.20 Max
5.5
20
0.20
7.80 +– 0.30
1.15
0° – 8°
0.70 ± 0.20
0.15
0.12 M
*Dimension including the plating thickness
Base material dimension
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
FP-20DA
—
Conforms
0.31 g
Unit: mm
12.8
13.2 Max
11
1
10
0.20 ± 0.10
0.935 Max
1.27
*0.42 ± 0.08
0.40 ± 0.06
*0.27 ± 0.05
0.25 ± 0.04
2.65 Max
7.50
20
0.25
10.40 +– 0.40
1.45
0° – 8°
0.57
0.70 +– 0.30
0.15
0.12 M
*Dimension including the plating thickness
Base material dimension
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
FP-20DB
Conforms
—
0.52 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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