HITACHI HL8325G

HL8325G
GaAlAs Laser Diode
Description
The HL8325G is a high-power 0.8 µm band GaAlAs laser diode with a TQW (triple quantum well)
structure. Its internal circuit configuration is suited for operation on a single positive supply voltage. It
is suitable as a light source for optical disk memories, card readers and various other types of optical
equipment.
Features
•
•
•
•
Infrared light output: λp = 820 to 840 nm
High power: standard continuous operation at 40 mW (CW), pulsed operation at 50 mW
Built-in monitor photodiode
Single longitudinal mode
190
HL8325G
Absolute Maximum Ratings (TC = 25°C)
Item
Symbol
Rated Value
Units
Optical output power
PO
40
mW
1
Pulse optical output power
PO (pulse)
50*
LD reverse voltage
VR (LD)
2
V
PD reverse voltage
VR (PD)
30
V
Operating temperature
Topr
–10 to +60
°C
Storage temperature
Tstg
–40 to +85
°C
Note:
mW
1. Maximum 50% duty cycle, maximum 1 µs pulse width
Optical and Electrical Characteristics (TC = 25 ± 3 °C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Optical output power
PO
40
—
—
mW
Kink free
Threshold current
Ith
—
40
70
mA
Slope efficiency
η
0.4
0.5
0.9
mW/mA
24 mW/ I (32 mW) – I (8 mW)
Lasing wavelength
λp
820
830
840
nm
PO = 40 mW
Beam divergence (parallel)
θ//
7
10
14
deg.
PO = 40 mW, FWHM
Beam divergence (perpendicular)
θ⊥
18
22
32
deg.
PO = 40 mW, FWHM
Monitor current
Is
20
40
130
µA
VR (PD) = 5 V, PO = 4 mW
Astigmatism
AS
—
5
—
µm
PO = 4 mW, NA = 0.4
191
HL8325G
Typical Characteristic Curves
192
HL8325G
Typical Characteristic Curves (cont)
193