HL7859MG Visible High Power Laser Diode Description The HL7859MG is a 0.78 µm band GaAlAs laser diode with a multi-quantum well (MQW)structure. It is suitable as a light source for optical disc memories and various other types of optical equipment. Hermetic sealing of the small package (φ5.6 mm) assures high reliability. Application • Optical disc memories. Features • • • • High output power Visible light output Small package Low astigmatism : 35 mW (CW) : λp = 775 to 795 nm : φ 5.6 mm dia. : 5 µm Typ (P O = 5 mW) 185 HL7859MG Absolute Maximum Ratings (TC = 25°C) Item Symbol Value Unit Optical output power PO 35 mW Pulse optical output power PO (pulse) 42 * mW Laser diode reverse voltage VR(LD) 2 V Photo diode reverse voltage VR(PD) 30 V Operating temperature Topr –10 to +60 °C Storage temperature Tstg –40 to +85 °C Note: Pulse condition : Pulse width = 1 µs, duty = 50% Optical and Electrical Characteristics (TC = 25°C) Items Symbols Min Typ Max Units Test Conditions Optical output power PO 35 — — mW Kink free * Threshold current Ith — 35 60 mA — Operating voltage VOP — 2.1 2.5 V PO = 35 mW Slope efficiency ηs 0.35 0.65 0.80 mW/mA 21 (mW) / (I(28 mW) – I (7 mW) ) Lasing wavelength λp 775 785 795 nm PO = 35 mW Beam divergence parallel θ// 8 9.5 12 deg. PO = 35 mW Beam divergence θ⊥ parpendicular to the junction 18 23 28 deg. PO = 35 mW Monitor current Is 0.2 — 2 mA PO = 35 mW, VR(PD) = 5 V Asitgmatism AS — 5 — µm PO = 5 mW, NA = 0.4 to the junction Note: Kink free is confirmed at the temperature of 25°C. 186 HL7859MG Curve Characteristics 187 HL7859MG 188 HL7859MG 189