HE8807SG/FL GaAlAs Infrared Emitting Diodes Description The HE8807SG/FL are single heterojunction structure GaAlAs light emitting diodes with a wavelength of 880 nm. Features • • • • • High output, high efficiency Narrow spectral width Sharp radiation directivity (HE8807FL) Wide radiation directivity (HE8807SG) High reliability Absolute Maximum Ratings (TC = 25°C) Item Symbol Rated Value Units Forward current IF 200 mA Reverse voltage VR 3 V Operating temperature Topr –20 to +85 °C Storage temperature Tstg –40 to +100 °C 245 HE8807SG/FL Optical and Electrical Characteristics (TC = 25°C) Item Optical output power HE8807SG HE8807FL Symbol Min Typ Max Units Test Conditions PO 10 20 — mW I F = 150 mA 0.5 1.0 — PF* 1 I F = 20 mA Peak wavelength λp 800 880 900 nm I F = 150 mA Spectral width ∆λ — 30 — nm I F = 150 mA Forward voltage VF — 1.7 2.3 V I F = 150 mA Reverse current IR — — 100 µA VR = 3 V Capacitance Ct — 10 — pF VR = 0 V, f = 1 MHz Rise time tr — 20 — ns I F = 50 mA Fall time tf — 20 — ns I F = 50 mA Note: 1. PF specification: The optical output within 9 degrees of the acceptance angle. Typical Characteristic Curves 246 HE8807SG/FL Typical Characteristic Curves (cont) 247 HE8807SG/FL Typical Characteristic Curves (cont) 248 HE8807SG/FL Typical Characteristic Curves (cont) 249