HRF302A Silicon Schottky Barrier Diode for Rectifying ADE-208-244C(Z) Rev 3 Features • Low forward voltage drop and suitable for high effifiency rectifying. • DO-214 is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. Laser Mark Package Code HRF302A 302A DO-214 Outline Cathode mark Mark 302A 1 2 Lot No. 1. Cathode 2. Anode HRF302A Absolute Maximum Ratings (Ta = 25°C) Item Symbol *1 RRM Repetitive peak reverse voltage V Average rectified current I o*1 *2 Value Unit 20 V 3 A 100 A Non-Repetitive peak forward surge current I FSM Junction temperature Tj 125 °C Storage temperature Tstg –40 to +125 °C Notes: 1. See from Fig.4 to Fig.7 2. 10msec half sine wave 1 pulse Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Condition Forward voltage VF — — 0.40 V I F = 3A Reverse current IR — — 1.0 mA VR = 20V ESD-Capability — 250 — — V C = 200pF , R = 0Ω , Both forward and reverse direction 1 pulse. Thermal resistance Rth(j-a) — 100 — °C/W Glass epoxy board Rth(j-c) — 34 — Note: 1. Glass epoxy board Land size 3.5 6.8 2.0 2 Unit: mm Tc = 25°C *1 HRF302A Main Characteristic 10 2 10 -2 Pulse test Ta=75°C 10 Reverse current IR (A) Forward current I F (A) Pulse test Ta=75°C 1.0 10 10 10 Ta=25°C -1 10 -3 -4 10 Ta=25°C -5 10 -2 -3 -6 0 0.1 0.2 0.3 0.4 0.5 0.6 10 Forward voltage V F (V) 10 20 15 5 Reverse voltage V R (V) Fig.1 Forward current Vs. Forward voltage Fig.2 Reverse current Vs. Reverse voltage 10 0 25 3 Capacitance C (pF) f=1MHz Pulse test 2 10 10 1.0 10 40 Reverse voltage V R (V) Fig.3 Capacitance Vs. Reverse voltage 3 HRF302A Main Characteristic 2.5 t 2.0 T t D= ― T Tj =25°C D=1/3 Sin 1.5 D=1/2 DC 1.0 0.5 D=5/6 0V Reverse power dissipation Pd (W) 0A Forward power dissipation Pd (W) 2.0 D=1/6 t T 1.5 1.0 Sin 0.5 0 0 1.0 0.5 1.5 2.0 2.5 3.0 5 0 10 20 15 Reverse voltage V R(V) Forward current I F (A) Fig.4 Forward p ower dissipation Vs. Forward current Fig.5 Reverse power dissipation Vs. Reverse voltage 3.5 3.5 VR=VRRM/2 Tj =125°C 3.0 DC 2.5 Average forward current IO (A) D=1/2 Sin D=1/6 2.0 1.5 1.0 0.5 VR=VRRM/2 Tj =125°C Glass epoxy PCB DC 3.0 D=1/3 Average forward current IO (A) D=2/3 Tj =125°C D=1/2 0 2.5 D=1/2 2.0 D=1/3 1.5 D=1/6 1.0 Sin 0.5 0 0 25 50 75 100 125 Case temperature Tc (°C) Fig.6 Average forward current Vs. Case temperature 4 t D= ― T 0 -25 0 25 50 75 100 125 Ambient temperature Ta (°C) Fig.7 Average forward current Vs. Ambient temperature HRF302A Package Dimensions Unit : mm 7.0 ± 0.2 2 4.0 ± 0.2 302A Lot No. 8.0 ± 0.3 1 Cathode 2 Anode 1.2 ± 0.3 2.1 ± 0.2 0.25 1 3.0 ± 0.2 Cathode Mark Hitachi Code JEDEC Code EIAJ Code Weight (g) DO-214 DO-214 — 0.16 5