HITACHI HSM113WK

ADE-208-025A(Z)
HSM113WK
Silicon Schottky Barrier Diode
for Battery Switch
Preliminary
Rev.1
Apr. 1993
Features
Pin Arrangement
• The HSM113WK has two different (V F - I F )
chips, and can change the main battery to the
backup battery automatically.
• MPAK package is suitable for high density
surface mounting and high speed assembly.
3
1
2
(Top View)
Ordering Information
Type No.
Laser Mark
Package Code
HSM113WK
S12
MPAK
1 Anode
2 Anode
3 Cathode
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Peak reverse voltage
Forward current
VRM
IF
IFSM *
Tj
Tstg
Non-Repetitive peak forward surge current
Junction temperature
Storage temperature
Value
Pin 1-3
20
200
2
125
-55 to +125
Value
Pin 2-3
20
100
0.6
125
-55 to +125
Unit
V
mA
A
°C
°C
* 10msec, 1 pulse square wave
Electrical Characteristics (Ta = 25°C)
Item
Forward voltage
Forward voltage
Reverse current
Symbol
VF1
VF2
IR
Min
Typ
Max
Pin 1-3
—
—
0.35
Pin 2-3
Pin 1-3
1.2
—
—
—
1.8
0.55
Pin 2-3
Pin 1-3
—
—
—
—
3.0
10
Pin 2-3
—
—
1.0
Unit
Test Condition
V
IF = 10mA
V
µA
IF = 200mA
IF = 100mA
VR = 5 V
VR = 20V
HSM113WK
1.0
10
-3
-1
-2
Reverse current I R (A)
Forward current I F (A)
10
10
10-3
-4
10
10 -5
10
-4
-5
10
-6
10
10
10
-6
-7
-7
0
0.1
0.2
0.3
0.4
0.5
10
0.6
0
4
Forward voltage VF (V)
8
16
12
Reverse voltage VR (V)
20
Fig.2 Reverse current Vs.
Reverse voltage
(Pin1-3)
Fig.1 Forward current Vs.
Forward voltage
(Pin1-3)
-9
10 -1
10
-11
10 -3
Reverse current I R (A)
Forward current I F (A)
10 -2
10 -4
10
10
-5
-6
10-7
10
-11
10
-12
10
10 -8
-13
-9
10
0
0.4
0.8
1.2
1.6
2.0
Forward voltage VF (V)
Fig.3 Forward current Vs.
Forward voltage
(Pin2-3)
2.4
10
0
4
8
16
12
Reverse voltage VR (V)
Fig.4 Reverse current Vs.
Reverse voltage
(Pin2-3)
20
HSM113WK
Unit: mm
0.65 – 0.3
+ 0.10
0.4 – 0.05
Laser Mark
+ 0.1
Package Dimensions
+ 0.10
0.16 – 0.06
0.3
2.8 +– 0.1
+ 0.2
– 0.6
2.8
2 Anode
3 Cathode
HITACHI Code
+ 0.2
1.9
1 Anode
1.1 – 0.1
1
0.95
0.1
0.65 +– 0.3
2
0.95
0 – 0.10
0.3
S12
1.5
3
JEDEC Code
MPAK(1)
—
EIAJ Code
SC-59A
Weight (g)
0.011