HVB14S Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator ADE-208-484(Z) Rev 0 December 1996 Features • • • Low forward resistance. (rf =7.0Ωmax) Low capacitance. (C=0.25pF typ) CMPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. Laser Mark Package Code HVB14S H6 CMPAK Outline 3 2 1 (Top View) 1 Cathode 2 Anode 3 Cathode Anode HVB14S Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit Reverse voltage VR 50 V Forward current IF 50 mA 100 mW *1 Power dissipation Pd Junction temperature Tj 125 °C Storage temperature Tstg -55Å`+125 °C Note: 1. Two device total. Electrical Characteristics (Ta = 25°C) * 2 Item Symbol Min Typ Max Unit Test Condition Forward voltage VF Å\ Å\ 1.0 V I F = 50 mA Reverse current IR Å\ Å\ 100 nA VR = 50V Capacitance C Å\ 0.25 Å\ pF VR = 50V, f = 1 MHz rf Å\ Å\ 7 Ω I F = 10 mA, f = 100 MHz Å\ 200 Å\ Å\ V C=200pF, Both forward and reverse direction 1 pulse Forward resistance ESD-Capability Note: Note: 2 *1 1. Failure criterion ; IR ≥ 200nA at VR =50 V 2. Per one device. HVB14S Main Characteristic -1 10 10 -8 -3 Forward current IF (A) Reverse current I R (A) 10 -5 10 10 -7 10 -9 -10 10 10 -11 -9 10 -11 10 -12 0 0.2 0.6 0.4 0.8 10 1.0 0 10 20 40 30 50 Reverse voltage V R (V) Forward voltage V F (V) Fig.2 Reverse current Vs. Reverse voltage Fig.1 Forward current Vs. Forward voltage 4 10 f=100MHz f=1MHz Capacitance C (pF) Forward resistance r f (Ω ) 10 1.0 -1 2 10 10 1.0 10 1.0 3 10 10 2 10 Reverse voltage V R (V) Fig.3 Capacitance Vs. Reverse voltage -5 10 -4 10 -3 10 Forward current I F -2 10 (A) Fig.4 Forward resistance Vs. Forward current 3 HVB14S Package Dimensions 0.1 0.3 +– 0.05 1.25 ± 0.1 3 H6 2 1 0.1 0.3 +– 0.05 0.65 0.2 1.3 ± 0.2 4 0.9 ± 0.1 0.1 0.3 +– 0.05 0.65 + 0.1 0.16 – 0.06 0 - 0.1 0.425 Laser Mark 2.1 ± 0.3 2.0 ± 0.2 0.425 Unit : mm Hitachi Code JEDEC Code EIAJ Code Weight (g) 1 Cathode 2 Anode 3 Cathode Anode CMPAK — SC-70 0.006 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. 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Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. 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