HVM187WK Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator ADE-208-056E (Z) Rev. 5 Jun. 1993 Features • Low forward resistance. (rf = 5.5 max) • MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. Laser Mark Package Code HVM187WK H1 MPAK Pin Arrangement 3 2 (Top View) 1 1 Anode 2 Anode 3 Cathode HVM187WK Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit Reverse voltage VR 60 V Forward current IF 50 mA Power dissipation Pd* 100 mW Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Note: Per one device Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Condition Forward voltage VF — — 1.0 V I F = 10mA Reverse current IR — — 100 nA VR = 60V Capacitance C — — 2.4 pF VR = 0V, f = 1MHz Forward resistance rf 3.5 — 5.5 Ω I F = 10mA, f = 100MHz ESD-Capability — 200 — — V *C = 200pF, Both forward and reverse direction 1 pulse. Note: Failure criterion; IR ≥ 100nA at VR = 60V –2 10 –4 Forward current I F (A) 10 10–6 10 –8 10–10 –12 10 0 0.2 0.4 0.6 0.8 1.0 Forward voltage VF (V) Fig.1 Forward current Vs. Forward voltage 2 HVM187WK 10 –8 Reverse current I R (A) –9 10 –10 10 10 –11 –12 10 0 60 20 80 40 Reverse voltage VR (V) 100 Fig.2 Reverse current Vs. Reverse voltage f = 1MHz Capacitance C (pF) 10 1.0 –1 10 1.0 10 Reverse voltage VR (V) 2 10 Fig.3 Capacitance Vs. Reverse voltage 3 HVM187WK 4 10 Forward resistance r f (Ω ) f = 100MHz 3 10 2 10 10 1.0 –5 10 –4 10 –3 10 –2 10 Forward current I F (A) Fig.4 Forward resistance Vs. Forward current 4 HVM187WK Package Dimensions 0.65 – 0.3 + 0.10 0.4 – 0.05 Laser Mark + 0.1 Unit: mm + 0.10 0.16 – 0.06 0.3 2.8 +– 0.1 + 0.2 – 0.6 2.8 1 Anode 2 Anode 3 Cathode + 0.2 1.9 1.1 – 0.1 1 0.95 0.1 0.65 +– 0.3 2 0.95 0 – 0.10 0.3 H 1 1.5 3 HITACHI Code MPAK(1) JEDEC Code — EIAJ Code SC-59A Weight (g) 0.011 5 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. 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Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. 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