HMC190MS8 v01.0700 MICROWAVE CORPORATION GaAs MMIC SPDT SWITCH DC - 3 GHz Typical Applications Features The HMC190MS8 is ideal for: Low Insertion Loss: 0.4dB • MMDS & WirelessLAN Ultra Small Package: MSOP8 • Portable Wireless High Input IP3: +50 dBm Positive Control: 0/+3V @ 10 uA General Description Functional Diagram The HMC190MS8 is a low cost SPDT switch in an 8-lead MSOP package. The switch can control signals from DC to 3.0 GHz. It is especially suited for low and medium power applications using positive control voltages. The two control voltages require a minimal amount of DC current, which is optimal for battery powered radio systems at 0.9, 1.9, and 2.4 GHz. The HMC190MS8 design provides exceptional third order intermodulation performance of +50 dBm. The design has been optimized for the small MSOP package, and maintains a VSWR of better than 1.2:1 up to 2 GHz. This device is the positive control MSOP8 packaged version of our HMC239S8 negative control device. SWITCHES - SMT 14 Electrical Specifications, TA = +25° C, Vctl = 0/+3 to +8 Vdc Parameter Min. Typ. Max. Units 0.4 0.4 0.5 0.7 0.6 0.6 0.8 1.0 dB dB dB dB Insertion Loss DC - 1.0 GHz DC - 2.0 GHz DC - 2.5 GHz DC - 3.0 GHz Isolation DC - 1.0 GHz DC - 2.0 GHz DC - 2.5 GHz DC - 3.0 GHz 23 23 22 19 27 27 26 22 dB dB dB dB Return Loss DC - 1.0 GHz DC - 2.0 GHz DC - 2.5 GHz DC - 3.0 GHz 24 20 15 10 28 28 20 16 dB dB dB dB Input Power for 1 dB Compression (Vctl = 0/+5V) 0.5 - 1.0 GHz 0.5 - 3.0 GHz 25 23 30 29 dBm dBm Input Third Order Intercept (Vctl = 0/+5V)(Two-tone Input Power = +7 dBm Each Tone) 0.5 - 1.0 GHz 0.5 - 3.0 GHz 45 44 50 49 dBm dBm Switching Characteristics DC - 3.0 GHz 3 10 ns ns tRISE, tFALL (10/90% RF) tON, tOFF (50% CTL to 10/90% RF) 14 - 36 Frequency For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com HMC190MS8 v01.0700 MICROWAVE CORPORATION GaAs MMIC SPDT SWITCH DC - 3 GHz GaAsLoss MMIC Insertion SUB-HARMONICALLY PUMPED MIXER 17 - 25 GHz Isolation 0 0 -10 ISOLATION (dB) INSERTION LOSS (dB) -0.5 -1 -1.5 -2 -20 -30 -40 -2.5 -3 -50 0 0.5 1 1.5 2 2.5 3 0 0.5 1 FREQUENCY (GHz) 1.5 2 2.5 3 FREQUENCY (GHz) Return Loss 14 -10 SWITCHES - SMT INPUT RETURN LOSS (dB) 0 -20 -30 -40 0 0.5 1 1.5 2 2.5 3 FREQUENCY (GHz) Input 0.1 and 1.0 dB Compression vs. Control Voltage Input Third Order Intercept Point vs. Control Voltage 35 55 1 dB at 1900 MHz INPUT THIRD ORDER INTERCEPT(dBm) 1 dB at 900 MHz 30 25 0.1 dB at 900 MHz 20 900 MHz 53 51 49 1900 MHz 47 0.1 dB at 1900 MHz 15 45 3 4 5 6 7 CONTROL INPUT (Vdc) 8 9 4 5 6 7 8 9 CONTROL INPUT (Vdc) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 14 - 37 HMC190MS8 v01.0700 MICROWAVE CORPORATION GaAs MMIC SPDT SWITCH DC - 3 GHz Truth Table Distortion vs. Control Voltage Control Input *Control Input Voltage Tolerances are ± 0.2 Vdc. Control Input* Third Order Intercept (dBm) +7 dBm Each Tone 900 MHz 1900 MHz A (Vdc) B (Vdc) Ia (uA) Ib (uA) RF to RF1 RF to RF2 +5 50 49 0 +3 -10 10 ON OFF +8 53 51 +3 0 10 -10 OFF ON 0 +5 -55 55 ON OFF +5 0 55 -55 OFF ON 0 +7 -210 210 ON OFF +7 0 210 -210 OFF ON 0 +8 -280 280 ON OFF +8 0 280 -280 OFF ON Carrier at 900 MHz SWITCHES - SMT 14 - 38 Signal Path State (Vdc) Compression vs. Control Voltage 14 Control Current Carrier at 1900 MHz Control Input Input Power for 0.1 dB Compression Input Power for 1.0 dB Compression Input Power for 0.1 dB Compression Input Power for 1.0 dB Compression (Volts) (dBm) (dBm) (dBm) (dBm) +3 17 20 17 20 +5 25 30 24 29 +8 31 33 30 32 Caution: Do not operate in 1dB compression at power levels above +31dBm (Vctl = +5 Vdc) and do not “hot switch” power levels greater than +20dBm (Vctl = +5Vdc). DC blocks are required at ports RFC, RF1 and RF2. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com HMC190MS8 v01.0700 MICROWAVE CORPORATION GaAs MMIC SPDT SWITCH DC - 3 GHz Absolute Maximum Ratings Max. Input Power VCTL = 0/+8V 0.5 GHz 0.5 - 2 GHz +27 dBm +34 dBm Control Voltage Range (A & B) -0.2 to +12 Vdc Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C Outline Drawing NOTES: SWITCHES - SMT 14 1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED PLASTIC SILICA AND SILICON IMPREGNATED. 2. LEADFRAME MATERIAL: COPPER ALLOY 3. LEADFRAME PLATING: Sn/Pb SOLDER 4. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 14 - 39 v01.0700 MICROWAVE CORPORATION HMC190MS8 GaAs MMIC SPDT SWITCH DC - 3 GHz Typical Application Circuit SWITCHES - SMT 14 14 - 40 Notes: 1. Set logic gate and switch Vdd = +3V to +5V and use HCT series logic to provide a TTL driver interface. 2. Control inputs A/B can be driven directly with CMOS logic (HC) with Vdd of 5 to 8 Volts applied to the CMOS logic gates. 3. DC blocking capacitors are required for each RF port as shown. Capacitor value determines lowest frequency of operation. 4. Highest RF signal power capability is achieved with Vdd = +8V and A/B set to 0/+8V. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v01.0700 MICROWAVE CORPORATION HMC190MS8 GaAs MMIC SPDT SWITCH DC - 3 GHz Evaluation Circuit Board List of Material Item Description J1 - J3 PC Mount SMA RF Connector J4 - J6 DC Pin C1 - C3 330 pF capacitor, 0402 Pkg. U1 HMC190MS8 SPDT Switch PCB* 101777 Evaluation PCB The circuit board used in the final application should be generated with proper RF circuit design techniques. Signal lines at the RF port should have 50 ohm impedance and the package ground leads and package bottom should be connected directly to the ground plane similar to that shown above. The evaluation circuit board shown above is available from Hittite Microwave Corporation upon request. SWITCHES - SMT 14 * Circuit Board Material: Rogers 4350 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 14 - 41