MICROWAVE CORPORATION HMC239S8 v01.0801 GaAs MMIC SPDT SWITCH DC - 2.5 GHz Typical Applications Features The HMC239S8 is ideal for: Low Insertion Loss: 0.4 dB • MMDS & WirelessLAN High Isolation: 35 dB • Basestation Infrastructure Fast Switching Speed: 2ns • Portable Wireless High Input IP3: +50 dBm Functional Diagram General Description The HMC239S8 is a low-cost GaAs MMIC SPDT switch in an 8-lead SOIC package. The switch can control signals from DC to 2.5 GHz. It is especially suited for low or medium power applications which require extremely fast switching with minimal insertion loss. The two control voltages require a minimal amount of DC current which is optimal for battery powered radio systems. RF1 and RF2 are reflective shorts when “Off”. SWITCHES - SMT 14 Electrical Specifications, TA = +25° C, Vctl = 0/-5V, 50 Ohm System Parameter Frequency Typ. Max. Units 0.4 0.4 0.5 0.6 0.7 0.6 0.6 0.7 0.8 1.0 dB dB dB dB dB Insertion Loss DC - 0.1 GHz DC - 0.5 GHz DC - 1.0 GHz DC - 2.0 GHz DC - 2.5 GHz Isolation DC - 0.5 GHz DC - 1.0 GHz DC - 2.0 GHz DC - 2.5 GHz 33 26 18 14 36 29 21 17 dB dB dB dB Return Loss DC - 1.0 GHz DC - 2.0 GHz DC - 2.5 GHz 18 17 15 21 21 20 dB dB dB Input Power for 1dB Compression 0/-5V Control 0.5 - 1.0 GHz 0.5 - 2.5 GHz 25 23 29 27 dBm dBm Input Third Order Intercept (Two-Tone Input Power = +7 dBm Each Tone) 0/-5V Control 0.5 - 1.0 GHz 0.5 - 2.5 GHz 45 44 50 49 dBm dBm 2 10 ns ns Switching Characteristics DC - 2.5 GHz tRISE, tFALL (10/90% RF) tON, tOFF (50% CTL to 10/90% RF) 14 - 118 Min. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com HMC239S8 v01.0801 MICROWAVE CORPORATION GaAs MMIC SPDT SWITCH DC - 2.5 GHz Isolation 0 0 -0.5 -10 ISOLATION (dB) INSERTION LOSS (dB) Insertion Loss -1 -1.5 -2 -2.5 -20 RF1 -30 RF2 -40 -50 -3 -60 0 1 2 3 0 1 FREQUENCY (GHz) 2 3 FREQUENCY (GHz) Return Loss 14 -10 SWITCHES - SMT RETURN LOSS (dB) 0 -20 -30 -40 0 1 2 3 FREQUENCY (GHz) Input Third Order Distortion vs. Control Voltage Input 0.1 and 1.0 dB Compression vs. Control Voltage 35 55 P1 dB at 1900 MHz 900 MHz 30 25 IP3 (dBm) COMPRESSION (dBm) P1 dB at 900 MHz P0.1 dB at 900 MHz 50 1900 MHz P0.1 dB at 1900 MHz 45 20 -4 -5 -6 -7 CONTROL VOLTAGE (Vdc) -8 -9 -4 -5 -6 -7 -8 CONTROL VOLTAGE (Vdc) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com -9 14 - 119 MICROWAVE CORPORATION HMC239S8 v01.0801 GaAs MMIC SPDT SWITCH DC - 2.5 GHz Truth Table Compression vs. Bias Voltage *Control Input Voltage Tolerances are ± 0.2 Vdc. Control Input* SWITCHES - SMT 14 14 - 120 Control Current Signal Path State A (Vdc) B (Vdc) Ia (uA) Ib (uA) RF to RF1 RF to RF2 -5 0 -25 10 ON OFF 0 -5 10 -25 OFF ON -6 0 -75 30 ON OFF 0 -6 30 -75 OFF ON -7 0 -130 60 ON OFF 0 -7 60 -130 OFF OM -8 0 -190 80 ON OFF 0 -8 80 -190 OFF ON Carrier at 900 MHz Carrier at 1900 MHz Control Input Input Power for 0.1 dB Compression Input Power for 1.0 dB Compression Input Power for 0.1 dB Compression Input Power for 1.0 dB Compression (Vdc) (dBm) (dBm) (dBm) (dBm) -5 25 29 23 27 -6 27 31 26 29 -8 29 33 28 32 Caution: Do not operate in 1 dB compression at power levels above +30 dBm and do not “hot switch” power levels greater than +20 dBm (Vctl= -5 Vdc). Distortion vs. Bias Voltage Control Input Third Order Intercept (dBm) +7 dBm Each Tone (Vdc) 900 MHz 1900 MHz -5 50 49 -8 53 51 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION HMC239S8 v01.0801 GaAs MMIC SPDT SWITCH DC - 2.5 GHz Absolute Maximum Ratings Max. Input Power (VCTL = 0/-8V) 0.05 GHz 0.5 - 2 GHz +27 dBm +34 dBm Control Voltage Range (A & B) +2 to -12 Vdc Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C Outline Drawing NOTES: 1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED SWITCHES - SMT 14 PLASTIC SILICA AND SILICON IMPREGNATED. 2. LEADFRAME MATERIAL: COPPER ALLOY 3. LEADFRAME PLATING: Sn/Pb SOLDER 4. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 14 - 121 MICROWAVE CORPORATION v01.0801 HMC239S8 GaAs MMIC SPDT SWITCH DC - 2.5 GHz Typical Application Circuit SWITCHES - SMT 14 Simple driver using inexpensive standard logic ICs provides fast switching using minimum DC current. 14 - 122 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v01.0801 HMC239S8 GaAs MMIC SPDT SWITCH DC - 2.5 GHz Evaluation Circuit Board List of Material Item Description J1 - J3 PC Mount SMA RF Connector J4 - J6 DC Pin C1 - C3 330 pF capacitor, 0402 Pkg. U1 HMC239S8 SPDT Switch PCB* 101780 Evaluation PCB The circuit board used in the final application should be generated with proper RF circuit design techniques. Signal lines at the RF port should have 50 ohm impedance and the package ground leads and package bottom should be connected directly to the ground plane similar to that shown above. The evaluation circuit board shown above is available from Hittite Microwave Corporation upon request. SWITCHES - SMT 14 * Circuit Board Material: Rogers 4350 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 14 - 123