MICROWAVE CORPORATION HMC346 v01.0304 GaAs MMIC VOLTAGE-VARIABLE ATTENUATOR, DC - 20 GHz ATTENUATORS - CHIP 2 Typical Applications Features This attenuator is ideal for use as a VVA for DC - 20 GHz applications: Wide Bandwidth: DC - 20 GHz Low Phase Shift vs. Attenuation • Point-to-Point Radio 32 dB Attenuation Range • VSAT Radio Die Size: 0.85 mm x 0.85 mm x 0.1 mm Functional Diagram General Description The HMC346 die is an absorptive Voltage Variable Attenuator (VVA) operating from DC - 20 GHz. It features an on-chip reference attenuator for use with an external op-amp to provide simple single voltage attenuation control, 0 to -3V. The device is ideal in designs where an analog DC control signal must control RF signal levels over a 30 dB amplitude range. For plastic packaged version, see the HMC346MS8G which operates from DC - 8 GHz. Electrical Specifications, TA = +25° C, 50 ohm system Parameter Typ. Max. Units 1.7 2.2 2.3 2.8 dB dB Insertion Loss DC - 12GHz: DC - 20 GHz: Attenuation Range DC - 12 GHz: DC - 20 GHz: 27 22 32 25 dB dB Return Loss DC - 12 GHz: 12 - 20 GHz: 6 10 10 15 dB dB tRISE, tFALL (10/90% RF): tON, tOFF (50% CTL to 10/90% RF): 2 8 ns ns Input Power for 0.25 dB Compression (0.5 - 20 GHz) Min. Atten: Atten. >2 dB: +8 +4 dBm dBm Input Third Order Intercept (0.5 - 20 GHz) (Two-tone Input Power = -8 dBm Each Tone) Min. Atten: Atten. >2 dB: +25 +10 dBm dBm Switching Characteristics 2-2 Min. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com HMC346 v01.0304 MICROWAVE CORPORATION GaAs MMIC VOLTAGE-VARIABLE ATTENUATOR, DC - 20 GHz Relative Attenuation 0 0 -0.5 -5 -1 -10 -1.5 -2 -2.5 -3 +25 C -55 C +85 C -3.5 2 -15 -20 -25 -30 -35 -40 -4 0 5 10 15 20 0 25 5 15 20 25 Relative Attenuation vs. Control Voltage @ 10 GHz Return Loss vs. Attenuation 0 0 MIN 5 dB MAX V1 +25 C V1 -55 C V1 +85 C V2 +25 C V2 -55 C V2 +85 C -0.5 CONTROL VOLTAGE (Vdc) -5 RETURN LOSS (dB) 10 FREQUENCY (GHz) FREQUENCY (GHz) -10 -15 -20 -25 -30 -35 -1 ATTENUATORS - CHIP ATTENUATION (dB) INSERTION LOSS (dB) Insertion Loss vs. Temperature -1.5 -2 -2.5 -3 0 5 10 15 20 0 25 5 10 15 20 25 30 RELATIVE ATTENUATION (dB) FREQUENCY (GHz) Relative Attenuation vs. Control Voltage @ 20 GHz Relative Phase 240 0 220 5 dB 10 dB 15 dB 20 dB 25 dB 30 dB max 180 160 140 V1 +25 C V1 -55 C V1 +85 C V2 +25 C V2 -55 C V2 +85 C -0.5 CONTROL VOLTAGE (Vdc) RELATIVE PHASE (DEG) 200 120 100 80 60 40 -1 -1.5 -2 -2.5 20 0 -3 0 5 10 15 FREQUENCY (GHz) 20 25 0 5 10 15 20 25 RELATIVE ATTENUATION (dB) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 2-3 MICROWAVE CORPORATION HMC346 v01.0304 GaAs MMIC VOLTAGE-VARIABLE ATTENUATOR, DC - 20 GHz Input IP2 vs. Attenuation* 70 25 60 20 50 INPUT IP2 (dBm) 30 15 10 0 dB 3 dB 6 dB 10 dB 5 40 30 0 dB 3 dB 6 dB 10 dB 20 0 10 0 5 10 15 20 0 5 FREQUENCY (GHz) 15 20 10 15 INPUT P1dB (dBm) 15 5 0 dB (REF) 6 dB 0 10 5 0 dB (REF) 6 dB 0 -10 -5 0 5 10 15 20 0 5 FREQUENCY (GHz) 10 15 FREQUENCY (GHz) Absolute Maximum Ratings Second Harmonic vs. Attenuation* 80 RF Input Power +18 dBm 70 Control Voltage Range +1.0 to -5.0 Vdc 60 Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C 50 40 0 dB 3 dB 6 dB 10 dB 30 20 0 5 10 15 20 FREQUENCY (GHz) *Two-tone input power = -8 dBm each tone, 1 MHz spacing. 2-4 20 1 dB Compression vs. Attenuation -5 SECOND HARMONIC (dBc) 10 FREQUENCY (GHz) 0.25 dB Compression vs. Attenuation INPUT .25dB (dBm) ATTENUATORS - CHIP 2 INPUT IP3 (dBm) Input IP3 vs. Attenuation* For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 20 MICROWAVE CORPORATION HMC346 v01.0304 GaAs MMIC VOLTAGE-VARIABLE ATTENUATOR, DC - 20 GHz Outline Drawing 1. ALL DIMENSIONS ARE IN INCHES (MILLIMETERS). 2. TYPICAL BOND PAD IS .004” SQUARE. 3. TYPICAL BOND PAD SPACING IS .006” CENTER TO CENTER EXCEPT AS NOTED. 4. BACKSIDE METALIZATION: GOLD 5. BACKSIDE METAL IS GROUND 6. BOND PAD METALIZATION: GOLD ATTENUATORS - CHIP 2 Pad Descriptions Pad Number Function Description 1, 2 RF1 Input, RF2 Output This pad is DC coupled and matched to 50 Ohm. Blocking capacitors are required if RF line potential is not equal to 0V. 3, 6 V2, V1 Control Input (Master). 4 I Control Input (Slave). 5 500 This pad must be DC grounded. GND Die bottom must be connected to RF ground. Interface Schematic For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 2-5 MICROWAVE CORPORATION HMC346 v01.0304 GaAs MMIC VOLTAGE-VARIABLE ATTENUATOR, DC - 20 GHz Single-Line Control Driver ATTENUATORS - CHIP 2 External op-amp control circuit maintains impedance match while attenuation is varied. Input control ranges from 0 Volts (min. attenuation) to -3.0 Volts (max. attenuation.) Assembly Diagram Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should brought as close to the die as possible in order to minimize bond wire length. Typical die-tosubstrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). 2-6 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION HMC346 v01.0304 GaAs MMIC VOLTAGE-VARIABLE ATTENUATOR, DC - 20 GHz Handling Precautions Follow these precautions to avoid permanent damage. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. ATTENUATORS - CHIP 2 Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. C and a tool temperature of 265 deg. C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 deg. C. DO NOT expose the chip to a temperature greater than 320 deg. C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31 mm (12 mils). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 2-7