HMC232 v02.1203 MICROWAVE CORPORATION GaAs MMIC SPDT NON-REFLECTIVE SWITCH, DC - 15.0 GHz Typical Applications Features Broadband switch for DC - 15 GHz applications: High Isolation: >50 dB @ 10 GHz • Fiber Optics Low Insertion Loss: 1.4 dB @ 6 GHz • Microwave Radio Non-Reflective Design • Military & Space Die Size: 1.04 mm x 2.05 mm x 0.1 mm • Test Equipment Direct Replacement for HMC132 • VSAT General Description Functional Diagram The HMC232 is a broadband non-reflective GaAs MESFET SPDT MMIC chip. Covering DC to 15 GHz, the switch features over 55 dB isolation at lower frequencies and over 45 dB at higher frequencies due to the implementation of on-chip via hole structures. The switch operates using two negative control voltage logic lines (A&B) of -5/0V and requires no Vee. Alternate A & B control pads are provided to ease MIC implementation. All data shown is tested with the chip in a 50 Ohm test fixture connected via 0.025 mm (1 mil) diameter wire bonds of 0.5 mm (20 mils) length. This product is a form, fit & functional replacement for the HMC132. SWITCHES - CHIP 7 7-2 Electrical Specifications, TA = +25° C, With 0/-5V Control, 50 Ohm System Parameter Frequency Insertion Loss DC - 6 GHz DC - 10 GHz DC - 15 GHz Isolation DC - 6 GHz DC - 10 GHz DC - 15 GHz Min. 50 45 40 Typ. Max. Units 1.4 2.2 3.1 1.7 2.5 3.4 dB db dB 55 50 45 dB dB dB Return Loss “On State” DC - 6 GHz DC - 15 GHz 18 12 dB dB Return Loss RF1, RF2 “Off State” DC - 6 GHz DC - 15 GHz 14 13 dB dB Input Power for 1 dB Compression 0.5 - 15 GHz 21 26 dBm Input Third Order Intercept (Two-Tone Input Power= +7 dBm Each Tone, 1 MHz Tone Separation) 0.5 - 15 GHz 44 49 dBm Switching Characteristics tRISE, tFALL (10/90% RF) tON, tOFF (50% CTL to 10/90% RF) DC - 15 GHz 3 5 ns ns For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com HMC232 v02.1203 MICROWAVE CORPORATION GaAs MMIC SPDT NON-REFLECTIVE SWITCH, DC - 15.0 GHz Insertion Loss vs. Temperature Isolation 0 0 -10 -20 ISOLATION (dB) INSERTION LOSS (dB) -1 -2 -3 -4 +25 C +85 C -55 C RF1 RF2 -30 -40 -50 -60 -70 -5 -80 -6 -90 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 FREQUENCY (GHz) 0 Return Loss 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 FREQUENCY (GHz) 0.1 and 1 dB Input Compression Point 30 0 RFC RF1, RF2 ON RF1, RF2 OFF 7 25 INPUT P1dB (dBm) -5 -10 -15 20 0.1 dB Compression Point 1 dB Compression Point 15 -20 10 -25 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 0 1 2 3 4 FREQUENCY (GHz) 5 6 7 8 9 10 11 12 13 14 15 16 FREQUENCY (GHz) Input Third Order Intercept Point 60 55 INPUT IP3 (dBm) RETURN LOSS (dB) 1 SWITCHES - CHIP 0 50 45 40 +25 C +85 C -55 C 35 30 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 7-3 MICROWAVE CORPORATION HMC232 v02.1203 GaAs MMIC SPDT NON-REFLECTIVE SWITCH, DC - 15.0 GHz Control Voltages Absolute Maximum Ratings RF Input Power (Vctl = -5V) (0.5 - 15 GHz) +30 dBm (@ +50 °C) Control Voltage Range (A & B) +1.0V to -7.5 Vdc Channel Temperature 150 °C Thermal Resistance 92 °C/W Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C State Bias Condition Low 0 to -0.2V @ 10 uA Max. High -5V @ 10 uA Typ. to -7V @ 45 uA Typ. Truth Table Control Input Signal Path State A B RFC to RF1 RFC to RF2 High Low ON OFF Low High OFF ON Caution: Do not “Hot Switch” power levels greater than +26 dBm (Vctl = 0/-5 Vdc). Outline Drawing SWITCHES - CHIP 7 NOTES: 1. ALL DIMENSIONS IN INCHES [MILLIMETERS] 2. BOND PADS ARE 0.004” SQUARE 3. TYPICAL BOND PAD SPACING CENTER TO CENTER IS .006” 4. BACKSIDE METALIZATION: GOLD 5. BOND PAD METALIZATION: GOLD 6. BACKSIDE OF DIE IS GROUND 7. DIE THICKNESS IS .004” 8. NO CONNECTION REQUIRED FOR UNLABLED BOND PADS 7-4 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION HMC232 v02.1203 GaAs MMIC SPDT NON-REFLECTIVE SWITCH, DC - 15.0 GHz Suggested Driver Circuit Pad Number Function Description 2, 5, 8, 10 A See truth table and control voltage table. Alternate A & B control pads provided. 3, 6, 9 B See truth table and control voltage table. Alternate A & B control pads provided. 1, 4, 7 RF1, RFC, RF2 This pad is DC coupled and matched to 50 Ohms. Blocking capacitors are required if the RF line potential is not equal to 0V. GND Die bottom must be connected to RF ground. Interface Schematic For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com SWITCHES - CHIP 7 Pad Descriptions 7-5 MICROWAVE CORPORATION v02.1203 HMC232 GaAs MMIC SPDT NON-REFLECTIVE SWITCH, DC - 15.0 GHz Assembly Diagram 7 SWITCHES - CHIP Mounting & Bonding Techniques for Microwave GaAs MMICs 7-6 The die should be attached directly to the ground plane with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should brought as close to the die as possible in order to minimize bond wire length. Typical dieto-substrate spacing is 0.152 mm (6 mils). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v02.1203 HMC232 GaAs MMIC SPDT NON-REFLECTIVE SWITCH, DC - 15.0 GHz Handling Precautions Follow these precautions to avoid permanent damage. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Mounting The chip is back-metallized and can be die mounted with electrically conductive epoxy. The mounting surface should be clean and flat. Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31 mm (12 mils). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 7 SWITCHES - CHIP Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. 7-7