HMC455LP3 v01.0604 MICROWAVE CORPORATION InGaP HBT ½ Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz AMPLIFIERS - SMT 8 Typical Applications Features This amplifier is ideal for high linearity applications: Output IP3: +42 dBm • Multi-Carrier Systems Gain: 13 dB • GSM, GPRS & EDGE 56% PAE @ +28 dBm Pout • CDMA & WCDMA +19 dBm W-CDMA Channel Power @ -45 dBc ACP • PHS 3 x 3 x 1 mm QFN SMT Package Functional Diagram General Description The HMC455LP3 is a high output IP3 GaAs InGaP Heterojunction Bipolar Transistor (HBT) ½ watt MMIC amplifier operating between 1.7 and 2.5 GHz. Utilizing a minimum number of external components the amplifier provides 13 dB of gain and +28 dBm of saturated power at 56% PAE from a single +5 Vdc supply voltage. The high output IP3 of +42 dBm coupled with the low VSWR of 1.4:1 makes the HMC455LP3 an ideal driver amplifier for PCS/3G wireless infrastructure. A low cost, leadless 3x3 mm QFN surface mount package (LP3) houses the linear amplifier. The LP3 provides an exposed base for excellent RF and thermal performance. Electrical Specifications, TA = +25° C, Vs= +5V Parameter Min. Frequency Range Gain Max. Min. 1.7 - 1.9 11.5 Gain Variation Over Temperature Max. Min. 1.9 - 2.2 13.5 0.012 Typ. 10.5 0.02 13 0.012 9 0.02 Typ. Max. Units 2.2 - 2.5 GHz 11.5 dB 0.012 0.02 dB / °C Input Return Loss 13 15 10 dB Output Return Loss 10 18 15 dB 26 dBm 27 dBm 40 dBm Output Power for 1dB Compression (P1dB) 24 Saturated Output Power (Psat) Output Third Order Intercept (IP3) Noise Figure Supply Current (Icq) 8 - 264 Typ. 27 24.5 28.5 37 40 27.5 23 28 39 42 37 7 6 6 dB 150 150 150 mA For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com HMC455LP3 v01.0604 MICROWAVE CORPORATION InGaP HBT ½ Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz 15 10 S21 S11 GAIN (dB) RESPONSE (dB) 5 0 S22 -5 -10 -15 -20 -25 1 1.5 2 2.5 3 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 1.5 +25C +85C -40C 1.6 1.7 1.8 FREQUENCY (GHz) 2.2 2.3 2.4 2.5 -5 +25C RETURN LOSS (dB) RETURN LOSS (dB) 2.1 0 -5 +85C -40C -10 -15 -20 -10 -15 -20 +25C +85C -40C -25 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 -30 1.5 2.5 1.6 1.7 1.8 FREQUENCY (GHz) 1.9 2 2.1 2.2 2.3 2.4 2.5 FREQUENCY (GHz) P1dB vs. Temperature Psat vs. Temperature 30 30 29 29 28 28 27 27 Psat (dBm) P1dB (dBm) 2 Output Return Loss vs. Temperature 0 26 25 24 23 26 25 24 23 +25C 22 +25C 22 +85C -40C 21 20 1.7 1.9 FREQUENCY (GHz) Input Return Loss vs. Temperature -25 1.5 8 Gain vs. Temperature AMPLIFIERS - SMT Broadband Gain & Return Loss 1.8 1.9 2 +85C -40C 21 2.1 2.2 FREQUENCY (GHz) 2.3 2.4 2.5 20 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5 FREQUENCY (GHz) Data shown is tuned for 1.85 - 2.2 GHz, contact HMC Applications for recommended 1.7 - 1.85 GHz & 2.2 - 2.5 GHz tuning circuits. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 265 HMC455LP3 v01.0604 MICROWAVE CORPORATION GaAs InGaP HBT ½ Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 1.7 Noise Figure vs. Temperature 10 9 8 NOISE FIGURE (dB) OIP3 (dBm) Output IP3 vs. Temperature +25C 1.9 6 5 4 3 +25C 2 +85C -40C 1.8 7 +85C -40C 1 2 2.1 2.2 2.3 2.4 0 1.7 2.5 1.8 1.9 Power Compression @ 1.95 GHz 4 6 8 10 12 14 16 18 20 60 56 Pout 52 Gain 48 PAE 44 40 36 32 28 24 20 16 12 8 4 0 -10 -8 -6 -4 -2 0 INPUT POWER (dBm) ISOLATION (dB) +85C -40C -10 -15 -20 -25 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3 2.4 2.5 Gain (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) +25C 1.6 2.3 2 4 6 8 2.5 10 12 14 16 18 20 44 40 36 32 28 24 Gain P1dB Psat OIP3 20 16 12 8 4.5 4.7 5 5.2 Vs (Vdc) Data shown is tuned for 1.85 - 2.2 GHz, contact HMC Applications for recommended 1.7 - 1.85 GHz & 2.2 - 2.5 GHz tuning circuits. 8 - 266 2.4 Gain, Power & IP3 vs. Supply Voltage @ 1.95 GHz 0 -30 1.5 2.2 INPUT POWER (dBm) Reverse Isolation vs. Temperature -5 2.1 Power Compression @ 2.15 GHz Pout (dBm), GAIN (dB), PAE (%) 60 56 52 Pout 48 Gain 44 PAE 40 36 32 28 24 20 16 12 8 4 0 -10 -8 -6 -4 -2 0 2 2 FREQUENCY (GHz) FREQUENCY (GHz) Pout (dBm), GAIN (dB), PAE (%) AMPLIFIERS - SMT 8 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 5.5 HMC455LP3 v01.0604 MICROWAVE CORPORATION GaAs InGaP HBT ½ Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz ACPR vs. Supply Voltage @ 1.96 GHz CDMA 2000, 9 Channels Forward ACPR vs. Supply Voltage @ 2.14 GHz W-CDMA, 64 DPCH 8 -30 -40 -50 WCDMA Frequency : 2.14 GHz Integration BW: 3.84 MHz 64 DPCH -40 4.5V 5V 5.5V -55 ACPR (dBc) ACPR (dBc) CDMA2000 Rev. 8 Frequency: 1.96 GHz Integration BW: 1.228 MHz Forward Link, SR1, 9 Channels -45 4.5V 5V 5.5V -50 -55 -60 -60 Source ACPR Source ACPR -65 -65 5 7 9 11 13 15 17 Channel Output Power (dBm) 19 21 5 7 9 11 13 15 17 Channel Output Power (dBm) 19 21 AMPLIFIERS - SMT -35 -45 Data shown is tuned for 1.85 - 2.2 GHz, contact HMC Applications for recommended 1.7 - 1.85 GHz & 2.2 - 2.5 GHz tuning circuits. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 267 HMC455LP3 v01.0604 MICROWAVE CORPORATION GaAs InGaP HBT ½ Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz AMPLIFIERS - SMT 8 Absolute Maximum Ratings Collector Bias Voltage (Vcc) +6.0 Vdc RF Input Power (RFin)(Vs = +5.0 Vdc) +30 dBm Junction Temperature 150 °C Continuous Pdiss (T = 85 °C) (derate 16 mW/°C above 85 °C) 1.04 W Thermal Resistance (junction to ground paddle) 63 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C Outline Drawing NOTES: 1. MATERIAL PACKAGE BODY: LOW STRESS INJECTION MOLDED PLASTIC SILICA AND SILICON IMPREGNATED. 2. LEAD AND GROUND PADDLE MATERIAL: COPPER ALLOY 3. LEAD AND GROUND PADDLE PLATING: Sn/Pb SOLDER 4. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 5. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 6. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 7. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 8. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 9. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED PCB LAND PATTERN. Data shown is tuned for 1.85 - 2.2 GHz, contact HMC Applications for recommended 1.7 - 1.85 GHz & 2.2 - 2.5 GHz tuning circuits. 8 - 268 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com HMC455LP3 v01.0604 MICROWAVE CORPORATION InGaP HBT ½ Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz Pin Descriptions Function Description 1, 2, 4 - 9, 11 - 16 N/C This pin may be connected to RF ground. 3 RFIN This pin is AC coupled. An off chip series matching capacitor is required. 10 RFOUT RF output and DC Bias for the output stage. GND Package bottom must be connected to RF/DC ground. Interface Schematic Application Circuit Recommended Component Values TL1 TL2 TL3 TL4 50 Ohm 50 Ohm 50 Ohm 50 Ohm L1 8.2 nH Physical Length 0.33” 0.18” 0.13” 0.04” C1 2.2 µF Electrical Length 34° 19° 13.5° 4° C2, C3 3.0 pF C4 0.9 pF C5 100 pF Impedance PCB Material: 10 mil Rogers 4350, Er = 3.48 8 AMPLIFIERS - SMT Pin Number Data shown is tuned for 1.85 - 2.2 GHz, contact HMC Applications for recommended 1.7 - 1.85 GHz & 2.2 - 2.5 GHz tuning circuits. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 269 v01.0604 HMC455LP3 MICROWAVE CORPORATION InGaP HBT ½ Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz Evaluation PCB AMPLIFIERS - SMT 8 J3 Pin Number Description 1, 2, 3 GND 4, 5, 6 Vs List of Materials Item Description J1 - J2 PC Mount SMA Connector J3 2 mm DC Header C1 2.2 µF Capacitor, Tantalum C2, C3 3.0 pF Capacitor, 0402 Pkg. C4 0.9 pF Capacitor, 0402 Pkg. C5 100 pF Capacitor, 0402 Pkg. L1 8.2 nH Inductor, 0402 Pkg. U1 HMC455LP3 Power Amplifier PCB* 106492 Evaluation PCB, 10 mils The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. * Circuit Board Material: Rogers 4350, Er = 3.48 Data shown is tuned for 1.85 - 2.2 GHz, contact HMC Applications for recommended 1.7 - 1.85 GHz & 2.2 - 2.5 GHz tuning circuits. 8 - 270 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v01.0604 HMC455LP3 MICROWAVE CORPORATION InGaP HBT ½ Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz Notes: AMPLIFIERS - SMT 8 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 271