HMC308 v03.1103 MICROWAVE CORPORATION GENERAL PURPOSE 100 mW GaAs MMIC AMPLIFIER, 0.8 - 3.8 GHz AMPLIFIERS - SMT 8 Typical Applications Features Broadband or Narrow Band Applications: Gain: 18 dB • Cellular/PCS/3G P1dB Output Power: +17 dBm@ +5V • Fixed Wireless & Telematics Single Supply: +3V or +5V • Cable Modem Termination Systems No External Components • WLAN, Bluetooth & RFID Integrated DC Blocks Ultra Small Package: SOT26 Functional Diagram General Description The HMC308 is a low cost MESFET MMIC amplifier that operates from a single +3 to +5V supply from 0.8 to 3.8 GHz. The surface mount SOT26 amplifier can be used as a broadband amplifier stage or used with external matching for optimized narrow band applications. With Vdd biased at +5V, the HMC308 offers 18 dB of gain and +20 dBm of saturated output power while requiring only 53 mA of current. This amplifier is ideal as a driver amplifier for transmitters or for use as a local oscillator (LO) amplifier to increase drive levels for passive mixers. The amplifier occupies 0.014 in2 (9 mm2), making it ideal for compact radio designs. Electrical Specifications, TA = +25° C, as a function of Vdd Vdd = +3V Vdd = +5V Vdd = +5V Vdd = +5V Parameter Units Min. Frequency Range Gain Max. Min. 2.3 - 2.7 13 Gain Variation over Temperature Max. Min. 0.8 - 2.3 15.5 0.025 Typ. 14 0.035 Max. Min. 2.3 - 2.7 18 0.025 Typ. 13 0.035 16 0.025 10 0.035 Typ. Max. 2.7 - 3.8 GHz 13 dB 0.025 0.035 dB/°C Input Return Loss 11 8 11 13 dB Output Return Loss 17 13 12 13 dB 15 dBm 17 dBm 27 dBm Output Power for 1 dB Compression (P1dB) 12 Saturated Output Power (Psat) Output Third Order Intercept (IP3) 8 - 42 Typ. 14 14 17 23 26 17 13.5 20 27 30 16.5 12 19.5 26 29 24 Noise Figure 7 7.5 7 7 dB Supply Current (Idd) 50 53 53 53 mA For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com HMC308 v03.1103 MICROWAVE CORPORATION GENERAL PURPOSE 100 mW GaAs MMIC AMPLIFIER, 0.8 - 3.8 GHz 8 P1dB vs. Vdd Bias 25 24 20 22 15 20 18 S11 S21 S22 5 0 -5 16 14 12 -10 10 -15 8 -20 6 Vdd=+5V Vdd=+3V -25 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 4 0.5 6 1 1.5 FREQUENCY (GHz) 24 22 22 20 20 18 18 16 16 14 12 10 8 3.5 4 14 12 10 6 +25C +85C -40C 4 +25C +85C -40C 4 2 2 1 1.5 2 2.5 3 3.5 0 0.5 4 1 1.5 FREQUENCY (GHz) -5 -10 REVERSE ISOLATION (dB) 0 -10 -15 -20 -25 S11 Vdd=+5V S22 Vdd=+5V S11 Vdd=+3V S22 Vdd=+3V 1 1.5 2 2.5 FREQUENCY (GHz) 2.5 3 3.5 4 Reverse Isolation vs. Vdd Bias 0 -30 2 FREQUENCY (GHz) Input & Output Return Loss vs. Vdd Bias RETURN LOSS (dB) 3 8 6 -35 0.5 2.5 Gain vs. Temperature @ Vdd = +3V 24 GAIN (dB) GAIN (dB) Gain vs. Temperature @ Vdd = +5V 0 0.5 2 FREQUENCY (GHz) AMPLIFIERS - SMT 10 P1dB (dBm) RESPONSE (dB) Broadband Gain & Return Loss @ Vdd = +5V 3 3.5 4 Vdd=+5V Vdd=+3V -20 -30 -40 -50 -60 0.5 1 1.5 2 2.5 3 3.5 4 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 43 HMC308 v03.1103 MICROWAVE CORPORATION GENERAL PURPOSE 100 mW GaAs MMIC AMPLIFIER, 0.8 - 3.8 GHz 30 28 26 Pout Gain 24 PAE 22 20 18 16 14 12 10 8 6 4 2 0 -2 -4 -20 -18 -16 -14 -12 -10 -8 Power Compression @ 2.5 GHz, Vdd = +5V Pout (dBm), GAIN (dB), PAE (%) Pout (dBm), GAIN (dB), PAE (%) -6 -4 -2 0 2 4 6 30 28 26 Pout 24 Gain 22 PAE 20 18 16 14 12 10 8 6 4 2 0 -2 -4 -20 -18 -16 -14 -12 -10 -8 INPUT POWER (dBm) Psat vs. Temperature @ Vdd = +5V 24 22 22 20 20 18 Psat (dBm) -4 -2 0 16 14 12 10 +25C +85C -40C 8 4 6 18 16 14 12 10 +25C +85C -40C 8 6 6 1 1.5 2 2.5 3 3.5 4 0.5 4 1 1.5 FREQUENCY (GHz) 2 2.5 3 FREQUENCY (GHz) OUTPUT IP3 (dBm) Output IP3 vs. Temperature @ Vdd = +5V 40 38 36 34 32 30 28 26 24 22 20 18 16 14 12 10 0.5 +25C +85C -40C 1 1.5 2 2.5 3 3.5 4 FREQUENCY (GHz) 8 - 44 2 P1dB vs. Temperature @ Vdd = +5V 24 4 0.5 -6 INPUT POWER (dBm) OUTPUT P1dB (dBm) AMPLIFIERS - SMT 8 Power Compression @ 2.0 GHz, Vdd = +5V For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 3.5 4 HMC308 v03.1103 MICROWAVE CORPORATION GENERAL PURPOSE 100 mW GaAs MMIC AMPLIFIER, 0.8 - 3.8 GHz Pout Gain PAE -6 -4 -2 0 2 4 6 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 -2 -4 -20 -18 -16 -14 -12 -10 -8 INPUT POWER (dBm) -6 -4 -2 0 2 4 6 P1dB vs. Temperature @ Vdd = +3V 24 22 22 20 20 OUTPUT P1dB (dBm) 24 18 16 14 12 10 +25C +85C -40C 8 18 16 14 12 10 +25C +85C -40C 8 6 6 1 1.5 2 2.5 3 3.5 4 0.5 4 1 1.5 FREQUENCY (GHz) 2 2.5 3 3.5 4 FREQUENCY (GHz) Output IP3 vs. Temperature @ Vdd = +3V OUTPUT IP3 (dBm) Psat (dBm) Pout Gain PAE INPUT POWER (dBm) Psat vs. Temperature @ Vdd = +3V 4 0.5 8 AMPLIFIERS - SMT 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 -2 -4 -20 -18 -16 -14 -12 -10 -8 Power Compression @ 2.5 GHz, Vdd = +3V Pout (dBm), GAIN (dB), PAE (%) Pout (dBm), GAIN (dB), PAE (%) Power Compression @ 2.0 GHz, Vdd = +3V 40 38 36 34 32 30 28 26 24 22 20 18 16 14 12 10 0.5 +25C +85C -40C 1 1.5 2 2.5 3 3.5 4 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 45 HMC308 v03.1103 MICROWAVE CORPORATION GENERAL PURPOSE 100 mW GaAs MMIC AMPLIFIER, 0.8 - 3.8 GHz AMPLIFIERS - SMT 8 Absolute Maximum Ratings Drain Bias Voltage (Vdd) +7.0 Vdc RF Input Power (RFin)(Vdd = +5.0 Vdc) +10 dBm Channel Temperature 150 °C Continuous Pdiss (T = 85 °C) (derate 6.25 mW/°C above 85 °C) 0.406 W Thermal Resistance (channel to lead) 160 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C Typical Supply Current vs. Vdd Vdd (Vdc) Idd (mA) +2.5 49 +3.0 50 +3.5 51 +4.5 50 +5.0 53 +5.5 54 Outline Drawing NOTES: 1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED PLASTIC SILICA AND SILICON IMPREGNATED. 2. LEADFRAME MATERIAL: COPPER ALLOY 3. LEADFRAME PLATING: Sn/Pb SOLDER 4. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND. 8 - 46 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com HMC308 v03.1103 MICROWAVE CORPORATION GENERAL PURPOSE 100 mW GaAs MMIC AMPLIFIER, 0.8 - 3.8 GHz Pin Number Function Description 1 RF OUT This pin is AC coupled and matched to 50 Ohms. 2, 5, 6 GND These pins must be connected to RF/DC ground. 3 Vdd Power supply voltage. 4 RF IN This pin is AC coupled and matched to 50 Ohms. Interface Schematic For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 AMPLIFIERS - SMT Pin Descriptions 8 - 47 v03.1103 MICROWAVE CORPORATION HMC308 GENERAL PURPOSE 100 mW GaAs MMIC AMPLIFIER, 0.8 - 3.8 GHz Evaluation PCB AMPLIFIERS - SMT 8 List of Material Item Description J1, J2 PC Mount SMA Connector J3, J4 DC Pins U1 HMC308 Amplifier PCB* 103220 Evaluation Board The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads should be connected directly to the ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. *Circuit Board Material: Roger 4350 8 - 48 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v03.1103 HMC308 GENERAL PURPOSE 100 mW GaAs MMIC AMPLIFIER, 0.8 - 3.8 GHz Notes: AMPLIFIERS - SMT 8 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 49