HMC453QS16G v00.0504 MICROWAVE CORPORATION AMPLIFIERS - SMT 8 InGaP HBT 1.6 WATT POWER AMPLIFIER, 0.45 - 2.2 GHz Features Typical Applications The HMC453QS16G is ideal for applications requiring a high dynamic range amplifier: Output IP3: +50 dBm • GSM, GPRS & EDGE 42% PAE @ +32 dBm Pout • CDMA & W-CDMA +25 dBm CDMA2000 Channel Power@ -45 dBc ACP • CATV/Cable Modem Single +5V Supply • Fixed Wireless & WLL Integrated Power Control (VPD) Gain: 15 dB @ 900 MHz QSOP16G SMT Package: 29.4 mm2 Functional Diagram General Description The HMC453QS16G is a high dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1.6 watt MMIC power amplifier operating between 0.45 and 2.2 GHz. Packaged in a miniature 16 lead QSOP plastic package, the amplifier gain is typically 15 dB from 0.8 to 1.0 GHz and 9 dB from 1.8 to 2.0 GHz. Utilizing a minimum number of external components and a single +5V supply, the amplifier output IP3 can be optimized to +49 dBm at 0.9 GHz or +50 dBm at 1.9 GHz. The power control (VPD) can be used for full power down or RF output power/current control. The high output IP3 and PAE makes the HMC453QS16G an ideal power amplifier for Cellular/PCS/3G, WLL, ISM and Fixed Wireless applications. Electrical Specifications, TA = +25°C, Vs= +5V, VPD = +5V (note 1) Parameter Min. Frequency Range Gain Typ. Max. Min. 810 - 960 12 Gain Variation Over Temperature 15 0.012 6 0.02 Typ. Max. Units 1710 - 1990 MHz 9 dB 0.012 0.02 dB / °C Input Return Loss 12 10 dB Output Return Loss 15 13 dB 31.5 dBm 32 dBm 50 dBm 7 7.5 dB Supply Current (Icq) 725 725 mA Control Current (IPD) 12 12 mA Output Power for 1dB Compression (P1dB) 29 Saturated Output Power (Psat) Output Third Order Intercept (IP3) (note 2) Noise Figure 32 28.5 32.5 46 49 44 Note 1: Specifications and data reflect HMC453QS16G measured using the respective application circuits for each designated frequency band found herein. Contact the HMC Applications Group for assistance in optimizing performance for your application. Note 2: Two-tone input power of -10 dBm per tone, 1 MHz spacing. 8 - 238 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com HMC453QS16G v00.0504 MICROWAVE CORPORATION InGaP HBT 1.6 WATT POWER AMPLIFIER, 0.45 - 2.2 GHz 10 S21 S11 GAIN (dB) RESPONSE (dB) 15 5 S22 0 -5 -10 -15 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 0.7 +25 C +85 C -40 C 0.75 0.8 FREQUENCY (GHz) 1 1.05 1.1 1 1.05 1.1 +25 C -5 +85 C -40 C -6 RETURN LOSS (dB) RETURN LOSS (dB) 0.95 0 -4 -8 -10 -12 -14 -10 -15 +25 C +85 C -40 C -20 -16 -18 0.75 0.8 0.85 0.9 0.95 1 1.05 -25 0.7 1.1 0.75 0.8 FREQUENCY (GHz) 34 32 32 30 30 Psat (dBm) 36 34 28 26 0.75 0.8 0.85 26 +25 C +85 C -40 C 22 0.9 0.95 FREQUENCY (GHz) 0.95 28 24 +25 C +85 C -40 C 22 0.9 Psat vs. Temperature @ 900 MHz 36 24 0.85 FREQUENCY (GHz) P1dB vs. Temperature @ 900 MHz P1dB (dBm) 0.9 Output Return Loss vs. Temperature @ 900 MHz 0 -2 20 0.7 0.85 FREQUENCY (GHz) Input Return Loss vs. Temperature @ 900 MHz -20 0.7 8 Gain vs. Temperature @ 900 MHz 20 AMPLIFIERS - SMT Broadband Gain & Return Loss @ 900 MHz 1 1.05 1.1 20 0.7 0.75 0.8 0.85 0.9 0.95 1 1.05 1.1 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 239 HMC453QS16G v00.0504 MICROWAVE CORPORATION InGaP HBT 1.6 WATT POWER AMPLIFIER, 0.45 - 2.2 GHz Output IP3 vs. Temperature @ 900 MHz 9 50 8 NOISE FIGURE (dB) 10 52 OIP3 (dBm) 48 AMPLIFIERS - SMT Noise Figure vs. Temperature @ 900 MHz 54 46 44 42 40 +25 C +85 C -40 C 38 36 34 0.75 0.8 7 6 5 4 3 +25 C 2 +85 C -40 C 1 0.85 0.9 0.95 0 0.7 1 0.75 0.8 FREQUENCY (GHz) Reverse Isolation vs. Temperature @ 900 MHz +25 C +85 C -40 C ISOLATION (dB) -10 -15 -20 -25 -30 0.7 0.75 0.8 0.85 0.9 0.95 0.9 0.95 1 1.05 1.1 Gain, Power & IP3 vs. Supply Voltage @ 900 MHz 0 -5 0.85 FREQUENCY (GHz) 1 1.05 1.1 FREQUENCY (GHz) GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) 8 55 50 45 Gain P1dB Psat OIP3 40 35 30 25 20 15 10 4.5 4.75 5 5.25 5.5 Vs (Vdc) ACPR vs. Supply Voltage @ 910 MHz CDMA IS95, 9 Channels Forward -25 55 -30 50 CDMA IS95 Frequency: 910 MHz Integration BW: 1.228 MHz Forward Link, 9 Channels -35 45 ACPR (dBc) GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) Gain, Power & IP3 vs. Supply Current @ 900 MHz* 40 35 30 25 4.5V -50 5.5V 5V -60 -65 15 10 480 -45 -55 Gain P1dB Psat OIP3 20 -40 Source ACPR -70 520 560 600 640 Icq (mA) 680 720 760 800 12 14 16 18 20 22 24 Channel Power (dBm) * Icq is controlled by varying VPD. 8 - 240 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 26 28 30 HMC453QS16G v00.0504 MICROWAVE CORPORATION InGaP HBT 1.6 WATT POWER AMPLIFIER, 0.45 - 2.2 GHz Gain vs. Temperature @ 1900 MHz 15 5 S21 GAIN (dB) RESPONSE (dB) 10 S11 S22 0 -5 -10 -15 1.2 1.4 1.6 1.8 2 2.2 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 1.7 8 +25 C +85 C -40 C 1.8 FREQUENCY (GHz) 1.9 2 2.1 2 2.1 FREQUENCY (GHz) Input Return Loss vs. Temperature @ 1900 MHz Output Return Loss vs. Temperature @ 1900 MHz 0 0 AMPLIFIERS - SMT Broadband Gain & Return Loss @ 1900 MHz -2 RETURN LOSS (dB) -6 RETURN LOSS (dB) +25 C +85 C -40 C -4 -8 -10 -12 -14 +25 C +85 C -40 C -5 -10 -15 -16 -18 -20 1.7 1.8 1.9 2 -20 1.7 2.1 1.8 FREQUENCY (GHz) Psat vs. Temperature @ 1900 MHz 36 36 34 34 32 32 30 30 Psat (dBm) P1dB (dBm) P1dB vs. Temperature @ 1900 MHz 28 26 24 20 1.7 1.8 28 26 24 +25 C +85 C -40 C 22 +25 C +85 C -40 C 22 1.9 FREQUENCY (GHz) 1.9 FREQUENCY (GHz) 2 2.1 20 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 241 HMC453QS16G v00.0504 MICROWAVE CORPORATION InGaP HBT 1.6 WATT POWER AMPLIFIER, 0.45 - 2.2 GHz 10 52 9 50 8 NOISE FIGURE (dB) 54 OIP3 (dBm) 48 AMPLIFIERS - SMT Noise Figure vs. Temperature @ 1900 MHz 46 44 42 40 +25 C +85 C -40 C 38 36 34 1.7 1.8 1.9 2 7 6 5 4 3 +25 C 2 +85 C 1 -40 C 0 1.7 2.1 1.8 FREQUENCY (GHz) Reverse Isolation vs. Temperature @ 1900 MHz +25 C +85 C -40 C ISOLATION (dB) -10 -15 -20 -25 -30 1.7 1.8 1.9 2 2.1 Gain, Power & IP3 vs. Supply Voltage @ 1900 MHz 0 -5 1.9 FREQUENCY (GHz) 2 2.1 FREQUENCY (GHz) GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) 8 Output IP3 vs. Temperature @ 1900 MHz 55 50 45 40 35 30 25 Gain P1dB Psat OIP3 20 15 10 5 4.5 4.75 5 5.25 5.5 Vs (Vdc) ACPR vs. Supply Voltage @ 1960 MHz CDMA 2000, 9 Channels Forward -30 55 -35 50 40 35 30 25 Gain P1dB Psat OIP3 20 15 -45 5V 4.5V -50 5.5V -55 -60 -65 Source ACPR 10 5 480 CDMA2000 Frequency: 1.96 GHz Integration BW: 1.228 MHz Forward Link, SR1, 9 Channels -40 45 ACPR (dBc) GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) Gain, Power & IP3 vs. Supply Current @ 1900 MHz -70 14 520 560 600 640 680 720 760 800 16 18 20 22 24 Channel Power (dBm) Icq (mA) 8 - 242 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 26 28 HMC453QS16G v00.0504 MICROWAVE CORPORATION InGaP HBT 1.6 WATT POWER AMPLIFIER, 0.45 - 2.2 GHz Absolute Maximum Ratings POWER DISSIPATION (W) 4.5 4 Max Pdiss @ +85C 3.5 1900 MHz 3 2.5 Collector Bias Voltage (Vcc) +6.0 Vdc Control Voltage (Vpd) +5.4 Vdc RF Input Power (RFin)(Vs = Vpd = +5.0 Vdc) +35 dBm Junction Temperature 150 °C Continuous Pdiss (T = 85 °C) (derate 58.5 mW/°C above 85 °C) 3.8 W Thermal Resistance (junction to ground paddle) 17.1 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C 2 900 MHz 1.5 1 0 5 10 15 20 25 INPUT POWER (dBm) Outline Drawing 8 AMPLIFIERS - SMT Power Dissipation NOTES: 1. PACKAGE BODY MATERIAL: MOLDING COMPOUND MP-180S OR EQUIVALENT. 2. LEAD MATERIAL: Cu w/Ag SPOT PLATING. 3. LEAD PLATING: 80Sn/20Pb 4. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 243 HMC453QS16G v00.0504 MICROWAVE CORPORATION InGaP HBT 1.6 WATT POWER AMPLIFIER, 0.45 - 2.2 GHz AMPLIFIERS - SMT 8 8 - 244 Pin Descriptions Pin Number Function Description 1, 2, 4, 5, 710, 13-16 GND These pins & package bottom must be connected to RF/DC ground. 3 VPD Power control pin. For maximum power, this pin should be connected to 5.0V. A higher voltage is not recommended. For lower idle current, this voltage can be reduced. 6 RFIN This pin is DC coupled. Off chip matching components are required. See Application Circuit herein. 11, 12 RFOUT RF output and DC Bias input for the output amplifier stage. Off chip matching components are required. See Application Circuit herein. Interface Schematic For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com HMC453QS16G v00.0504 MICROWAVE CORPORATION InGaP HBT 1.6 WATT POWER AMPLIFIER, 0.45 - 2.2 GHz 900 MHz Application Circuit 8 AMPLIFIERS - SMT This circuit was used to specify the performance for 810-960 MHz operation. Contact the HMC Applications Group for assistance in optimizing performance for your application. Note: C3 and C4 should be placed as close to pins as possible. TL1 TL2 TL3 Recommended Component Values 50 Ohm 50 Ohm 50 Ohm C1 5.0 pF Physical Length 0.26” 0.12” 0.15” C2, C3 3.3 pF Electrical Length 28° 13° 16° C4, C7 100 pF C5 8.2 pF C6 56 pF Impedance PCB Material: 10 mil Rogers 4350, Er = 3.48 C8, C9 2.2 µF C10 1.0 pF L1 30 nH L2 20 nH R1 5.6 Ohm For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 245 HMC453QS16G v00.0504 MICROWAVE CORPORATION InGaP HBT 1.6 WATT POWER AMPLIFIER, 0.45 - 2.2 GHz 900 MHz Evaluation PCB AMPLIFIERS - SMT 8 List of Materials for Evaluation PCB 108709-900* Item Description J1 - J2 PC Mount SMA Connector J3 2 mm DC Header C1 5.0 pF Capacitor, 0402 Pkg. C2, C3 3.3 pF Capacitor, 0402 Pkg. C4, C7 100 pF Capacitor, 0402 Pkg. C5 8.2 pF Capacitor, 0402 Pkg. C6 56 pF Capacitor, 0402 Pkg. C8, C9 2.2 µF Capacitor, Tantalum C10 1.0 pF Capacitor, 0402 Pkg. L1 30 nH Inductor, 0402 Pkg. L2 20 nH Inductor, 0402 Pkg. R1 5.6 Ohm Resistor, 0402 Pkg. U1 HMC453QS16G PCB** 108707 Evaluation PCB, 10 mils The circuit board used in this application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. ** Circuit Board Material: Rogers 4350, Er = 3.48 * Reference this number when ordering complete evaluation PCB. 8 - 246 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com HMC453QS16G v00.0504 MICROWAVE CORPORATION InGaP HBT 1.6 WATT POWER AMPLIFIER, 0.45 - 2.2 GHz 1900 MHz Application Circuit 8 AMPLIFIERS - SMT This circuit was used to specify the performance for 1710-1990 MHz operation. Contact the HMC Applications Group for assistance in optimizing performance for your application. Note: C2, C3 and C4 should be placed as close to pins as possible. Recommended Component Values L1 18 nH L2 20 nH R1 5.6 Ohms C1 5.0 pF C2 2.7 pF C3, C6 100 pF C4 3.9 pF C5 15 pF C7, C8 2.2 µF For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 247 HMC453QS16G v00.0504 MICROWAVE CORPORATION InGaP HBT 1.6 WATT POWER AMPLIFIER, 0.45 - 2.2 GHz 1900 MHz Evaluation PCB AMPLIFIERS - SMT 8 List of Materials for Evaluation PCB 108721-1900* Item Description J1 - J2 PC Mount SMA Connector J3 2 mm DC Header C1 5.0 pF Capacitor, 0402 Pkg. C2 2.7 pF Capacitor, 0402 Pkg. C3, C6 100 pF Capacitor, 0402 Pkg. C4 3.9 pF Capacitor, 0402 Pkg. C5 15 pF Capacitor, 0402 Pkg. C7, C8 2.2 µF Capacitor, Tantalum L1 18 nH Inductor, 0402 Pkg. L2 20 nH Inductor, 0402 Pkg. R1 5.6 Ohms U1 HMC453QS16G Linear Amp PCB** 108719 Evaluation PCB, 10 mils The circuit board used in this application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. ** Circuit Board Material: Rogers 4350, Er = 3.48 * Reference this number when ordering complete evaluation PCB. 8 - 248 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v00.0504 MICROWAVE CORPORATION HMC453QS16G InGaP HBT 1.6 WATT POWER AMPLIFIER, 0.45 - 2.2 GHz Notes: AMPLIFIERS - SMT 8 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 249