WJCI ECP200D

ECP200D
The Communications Edge TM
2 Watt, High Linearity InGaP HBT Amplifier
• +5V Single Positive Supply
• MTTF > 100 Years
• 16-pin 4x4mm Lead-free/Green/
RoHS-compliant QFN Package
Applications
• Final stage amplifiers for Repeaters
• Mobile Infrastructure
The ECP200D is targeted for use as a driver amplifier in
wireless infrastructure where high linearity and medium
power is required. An internal active bias allows the
ECP200D to maintain high linearity over temperature
and operate directly off a single +5V supply. This
combination makes the device an excellent candidate for
transceiver line cards in current and next generation
multi-carrier 3G base stations.
Specifications (1)
Parameter
Operational Bandwidth
Test Frequency
Gain
Input Return Loss
Output Return Loss
P1dB
Output IP3 (2)
IS-95A Channel Power
@ -45 dBc ACPR, 1960 MHz
wCDMA Channel Power
@ -45 dBc ACLR, 2140 MHz
Noise Figure
Operating Current Range, Icc (3)
Device Voltage, Vcc
N/C
N/C
15
14
13
12 N/C
N/C 2
11 RF OUT
RF IN 3
10 RF OUT
9 N/C
N/C 4
5
6
7
N/C
• 18 dB Gain @ 900 MHz
16
Vref 1
Function
Vref
RF Input
RF Output
Vbias
GND
N/C or GND
8
N/C
• +51 dBm Output IP3
Vbias
• +33 dBm P1dB
The ECP200D is a high dynamic range driver amplifier
in a low-cost surface mount package. The InGaP/GaAs
HBT is able to achieve high performance for various
narrowband-tuned application circuits with up to +51
dBm OIP3 and +33 dBm of compressed 1dB power. It
is housed in an industry standard in a lead-free/
green/RoHS-compliant 16-pin 4x4mm QFN surfacemount package. All devices are 100% RF and DC
tested.
N/C
• 400 – 2300 MHz
Functional Diagram
N/C
Product Description
N/C
Product Features
Product Information
Pin No.
1
3
10, 11
16
Backside Paddle
2, 4-9, 12-15
Typical Performance (4)
Units Min
MHz
MHz
dB
dB
dB
dBm
dBm
Typ
400
9
+32
+47
Max
Parameter
2300
Frequency
S21 – Gain
S11 – Input R.L.
S22 – Output R.L.
P1dB
Output IP3
IS-95A Channel Power
2140
10
20
6.8
+33.2
+48
Units
@ -45 dBc ACPR
dBm
+27.5
dBm
+25.3
dB
mA
V
7.7
800
+5
wCDMA Channel Power
@ -45 dBc ACLR
700
Noise Figure
Device Bias (3)
900
Typical
MHz
dB
dB
dB
dBm
dBm
900
18
-18
-11
+33
+49
1960
11
-19
-6.8
+33.4
+51
dBm
+27
+27.5
dBm
dB
2140
10
-20
-6.8
+33.2
+48
+25.3
8.0
7.3
7.7
+5 V @ 800 mA
4. Typical parameters reflect performance in a tuned application circuit at +25 °C.
1. Test conditions unless otherwise noted: 25 ºC, +5V Vsupply, 2140 MHz, in tuned application circuit.
2. 3OIP measured with two tones at an output power of +17 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. This corresponds to the quiescent current or operating current under small-signal conditions into
pins 6, 7, and 8. It is expected that the current can increase by an additional 200 mA at P1dB. Pin
1 is used as a reference voltage for the internal biasing circuitry. It is expected that Pin 1 will pull
22mA of current when used with a series bias resistor of R1=15Ω. (ie. total device current
typically will be 822 mA.)
Absolute Maximum Rating
Parameter
Operating Case Temperature
Storage Temperature
RF Input Power (continuous)
Device Voltage
Device Current
Device Power
Junction Temperature
Rating
-40 to +85 °C
-65 to +150 °C
+28 dBm
+8 V
1400 mA
8W
+250 °C
Ordering Information
Part No.
Description
2 Watt, High Linearity InGaP HBT Amplifier
ECP200D-G
(lead-free/green/RoHS-compliant 16-pin 4x4mm QFN package)
ECP200D-PCB900
ECP200D-PCB1960
ECP200D-PCB2140
900 MHz Evaluation Board
1960 MHz Evaluation Board
2140 MHz Evaluation Board
Operation of this device above any of these parameters may cause permanent damage.
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com
Page 1 of 6
April 2006
ECP200D
The Communications Edge TM
2 Watt, High Linearity InGaP HBT Amplifier
Product Information
Typical Device Data
S-Parameters (VCC = +5 V, ICC = 800 mA, T = 25 °C, unmatched 50 ohm system)
S22
0
2.
4
0.
3.
4
4.
0
4.
0
5 .0
0. 2
10 .0
10.0
5.0
4.0
3. 0
2.0
1.0
0.8
0.6
0.4
0.2
0
10.0
5.0
4.0
3.0
2.0
1.0
0.8
0.6
0.2
0
0.4
10.0
20
0
5.0
0.2
25
3.
0
30
15
0
-10.0
2
-0.
0
.0
-0
.4
-2
Swp Min
50MHz
-1.0
-0. 8
.6
-0
-0.8
Swp Min
50MHz
-1.0
-0
.6
-2
.0
.0
.0
.4
-3
2500
-
2050
-4
1050
1550
Frequency (MHz)
- 5.
550
3.
0
-0
50
.0
0
-4
2
0
-0.
5
-5.
10
-1 0.
Gain (dB)
1.0
0. 8
6
0
2.
DB(GMax())
Swp Max
4000MHz
0.
DB(|S(2,1)|)
35
0.
6
40
Swp Max
4000MHz
0.
0.8
1.0
S11
Gain / Maximum Stable Gain
Notes:
The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency,
it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the dashed red line.
The impedance plots are shown from 50 – 3000 MHz, with markers placed at 0.5 – 3.0 GHz in 0.5 GHz increments.
S-Parameters (VCC = +5 V, ICC = 800 mA, T = 25 °C, unmatched 50 ohm system, calibrated to device leads)
Freq (MHz)
50
100
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
2400
2600
2800
3000
S11 (dB)
-0.80
-0.60
-0.64
-0.76
-0.89
-1.08
-1.54
-2.48
-5.25
-16.57
-7.12
-2.68
-1.34
-0.80
-0.49
-0.53
-0.50
S11 (ang)
-177.34
178.13
174.02
166.66
158.43
150.86
141.98
131.55
115.96
118.86
-149.33
-169.62
175.50
164.47
154.67
146.29
136.44
S21 (dB)
27.72
22.13
16.20
10.54
7.75
6.09
5.29
5.24
5.83
6.03
3.81
0.37
-3.32
-6.81
-9.46
-12.22
-14.55
S21 (ang)
107.79
96.85
89.13
80.79
72.52
64.42
54.50
41.62
20.85
-9.41
-47.41
-72.56
-89.96
-102.05
-112.59
-121.23
-128.37
S12 (dB)
S12 (ang)
-45.30
-43.21
-44.86
-42.84
-44.05
-43.61
-42.64
-39.25
-39.43
-37.39
-39.26
-40.69
-45.63
-50.41
-48.80
-50.62
-49.46
S22 (dB)
19.06
11.92
-4.05
6.99
2.89
-7.72
-4.97
-33.49
-52.73
-100.38
-126.48
-169.19
-163.76
149.05
157.02
69.74
79.86
-0.81
-0.79
-0.62
-0.35
-0.47
-0.66
-0.73
-0.82
-0.58
-0.58
-0.42
-0.52
-0.53
-0.61
-0.62
-0.68
-0.77
S22 (ang)
-139.65
-158.43
-168.80
-177.29
179.92
179.00
177.98
176.35
175.10
174.84
170.66
169.04
167.35
164.01
162.14
157.85
156.81
Device S-parameters are available for download off of the website at: http://www.wj.com
Application Circuit PC Board Layout
Circuit Board Material: .014” Getek, single layer, 1 oz copper, Microstrip line details: width = .026”, spacing = .026”
The silk screen markers ‘A’, ‘B’, ‘C’, etc. and ‘1’, ‘2’, ‘3’, etc. are used as placemarkers for the input and output tuning
shunt capacitors – C8 and C9. The markers and vias are spaced in .050” increments.
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com
Page 2 of 6
April 2006
ECP200D
The Communications Edge TM
2 Watt, High Linearity InGaP HBT Amplifier
Product Information
900 MHz Application Circuit (ECP200D-PCB900)
Typical RF Performance at 25 °C
Frequency
S21 – Gain
S11 – Input Return Loss
S22 – Output Return Loss
Output P1dB
Output IP3
Vsupply = +5V
ID=R4
R=0 Ohm
900 MHz
18 dB
-18 dB
-11 dB
+33 dBm
ID=C4
C=1e7 pF
Channel Power
(@-45 dBc ACPR, IS-95 9 channels fwd)
Noise Figure
Device / Supply Voltage
Quiescent Current (1)
ID=R2
R=22 Ohm
ID=C5
C=1000 pF
ID=C7
C=1000 pF
ID=C1
C=56 pF
ID=C6
C=10 pF
16
TLINP
ID=TL1
Z0=50 Ohm
L=75 mil
Eeff=3.16
Loss=0
F0=0 GHz
ID=R3
R=51 Ohm
+49 dBm
(+17 dBm / tone, 1 MHz spacing)
+5.6V Zener
ID=R1
R=15 Ohm
ID=C11
R=0 Ohm
+27 dBm
14
13
1
12
2
11
ID=ECP200D
3
ID=C2
C=56 pF
15
ID=L1
L=18 nH
size 1008
4
TLINP
ID=TL2
Z0=50 Ohm
L=375 mil
Eeff=3.16
Loss=0
F0=0 GHz
9
ID=C8
C=8.2 pF
8.0 dB
+5 V
800 mA
5
6
ID=C3
C=56 pF
10
7
8
ID=C9
C=10 pF
C9 should be placed at silk
screen marker "8" on the
WJ evaluation board.
C8 should be placed at silk screen marker "B"
on the WJ evaluation board.
1. This corresponds to the quiescent current or operating current under
small-signal conditions into pins 10, 11, and 16.
S11 vs. Frequency
0
19
-5
+25°C
17
+25°C
-10
-15
-20
860
-40°C
880
+85°C
900
920
-30
840
940
+25°C
860
34
6
4
2
880
900
-40°C
+85°C
920
26
840
940
+25°C
45
40
-40 C
920
940
860
880
900
920
22
940
+85 C
23
24
25
26
27
28
29
24
26
Output Channel Power (dBm)
OIP3 vs. Output Power
freq. = 900 MHz, 901 MHz, +17 dBm/tone
freq. = 900 MHz, 901 MHz, +25° C
55
50
45
35
-40
+25 C
-70
40
880
900
Frequency (MHz)
940
-60
+85°C
OIP3 (dBm)
OIP3 (dBm)
50
920
-50
OIP3 vs. Temperature
55
900
ACPR vs. Channel Power
Frequency (MHz)
+25° C, +17 dBm/tone
880
+85°C
IS-95, 9 Ch. Fwd, ±885 kHz offset, 30 kHz Meas BW, 900 MHz
-40
30
OIP3 vs. Frequency
860
860
-40°C
Frequency (MHz)
32
Frequency (MHz)
55
940
Circuit boards are optimized at 880 MHz
28
860
920
ACPR (dBc)
8
P1dB (dBm)
NF (dB)
36
+25°C
900
P1dB vs. Frequency
10
-40°C
880
-20
840
Frequency (MHz)
Noise Figure vs. Frequency
OIP3 (dBm)
-10
-25
Frequency (MHz)
35
840
+85°C
-15
16
0
840
-40°C
S22 (dB)
18
15
840
S22 vs. Frequency
0
-5
S11 (dB)
S21 (dB)
S21 vs. Frequency
20
50
45
40
35
-15
10
35
Temperature (°C)
60
85
12
14
16
18
20
22
Output Power (dBm)
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com
Page 3 of 6
April 2006
ECP200D
The Communications Edge TM
2 Watt, High Linearity InGaP HBT Amplifier
Product Information
1960 MHz Application Circuit (ECP200D-PCB1960)
Typical RF Performance at 25 °C
Frequency
S21 – Gain
S11 – Input Return Loss
S22 – Output Return Loss
Output P1dB
Output IP3
Vsupply = +5V
ID=R4
R=0 Ohm
1960 MHz
11 dB
-20 dB
-6.8 dB
+33.4 dBm
ID=C4
C=1e7 pF
ID=C6
C=10 pF
16
TLINP
ID=TL1
Z0=50 Ohm
L=300 mil
Eeff=3.16
Loss=0
F0=0 GHz
ID=C11
R=0 Ohm
Noise Figure
Device / Supply Voltage
Quiescent Current (1)
14
13
1
12
2
11
3
10
4
9
ID=C8
C=2.2 pF
7.3 dB
+5 V
800 mA
15
TLINP
ID=TL3
Z0=50 Ohm
L=125 mil
Eeff=3.16
Loss=0
F0=0 GHz
ID=L1
L=18 nH
size 1008
ID=ECP200D
ID=C2
C=56 pF
+27.5 dBm
(@-45 dBc ACPR, IS-95 9 channels fwd)
ID=C7
C=1000 pF
ID=C1
C=56 pF
+51 dBm
Channel Power
ID=R2
R=22 Ohm
ID=C5
C=1000 pF
ID=R3
R=51 Ohm
(+17 dBm / tone, 1 MHz spacing)
+5.6V Zener
ID=R1
R=15 Ohm
5
6
7
TLINP
ID=TL2
Z0=50 Ohm
L=100 mil
Eeff=3.16
Loss=0
F0=0 GHz
8
ID=C10
C=1.5 pF
ID=C9
C=3.9 pF
C9 should be placed between
silkscreen markers "2" and "3"
on the WJ evaluation board.
C8 should be placed between silk screen markers "F"
and "G" on the WJ evaluation board.
C10 should be placed at
silkscreen marker "5" on
the WJ evaluation board.
1. This corresponds to the quiescent current or operating current under
small-signal conditions into pins 10, 11, and 16.
S11 vs. Frequency
0
12
-5
+25°C
10
+25°C
-10
-15
-20
1940
-40°C
1950
+85°C
1960
1970
1980
-30
1930
1990
+25°C
1940
34
6
4
2
1950
1960
1970
1990
-40°C
+85°C
1980
26
1930
1990
+25°C
45
40
1980
1990
-65
-40 C
1940
1950
1960
1970
1980
22
1990
+25 C
+85 C
23
24
25
26
27
28
29
Output Channel Power (dBm)
OIP3 vs. Output Power
freq. = 1960 MHz, 1961 MHz, +17 dBm/tone
freq. = 1960 MHz, 1961 MHz, +25° C
55
50
45
35
-40
1990
-75
40
1950 1960 1970
Frequency (MHz)
1980
-55
+85°C
OIP3 (dBm)
OIP3 (dBm)
50
1970
-45
OIP3 vs. Temperature
55
1960
ACPR vs. Channel Power
Frequency (MHz)
+25° C, +17 dBm/tone
1950
+85°C
IS-95, 9 Ch. Fwd, ±885 kHz offset, 30 kHz Meas BW, 1960 MHz
-35
30
OIP3 vs. Frequency
1940
1940
-40°C
Frequency (MHz)
32
Frequency (MHz)
55
1980
Circuit boards are optimized at 1960 MHz
28
1940
1970
ACPR (dBc)
8
P1dB (dBm)
36
+25°C
1960
P1dB vs. Frequency
10
-40°C
1950
-20
1930
Frequency (MHz)
Noise Figure vs. Frequency
NF (dB)
-10
-25
Frequency (MHz)
OIP3 (dBm)
+85°C
-15
9
35
1930
-40°C
S22 (dB)
11
0
1930
S22 vs. Frequency
0
-5
S11 (dB)
S21 (dB)
S21 vs. Frequency
13
8
1930
ID=C3
C=56 pF
50
45
40
35
-15
10
35
Temperature (°C)
60
85
12
14
16
18
Output Power (dBm)
20
22
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com
Page 4 of 6
April 2006
ECP200D
The Communications Edge TM
2 Watt, High Linearity InGaP HBT Amplifier
Product Information
2140 MHz Application Circuit (ECP200D-PCB2140)
Typical RF Performance at 25 °C
Frequency
S21 – Gain
S11 – Input Return Loss
S22 – Output Return Loss
Output P1dB
Output IP3
Vsupply = +5V
ID=R4
R=0 Ohm
2140 MHz
10 dB
-20 dB
-6.8 dB
+33.2 dBm
ID=C3
C=1e7 pF
ID=C5
C=10 pF
16
TLINP
ID=TL1
Z0=50 Ohm
L=175 mil
Eeff=3.16
Loss=0
F0=0 GHz
ID=C11
R=0 Ohm
Noise Figure
Device / Supply Voltage
Quiescent Current (1)
14
13
TLINP
ID=TL3
Z0=50 Ohm
L=100 mil
Eeff=3.16
Loss=0
F0=0 GHz
12
ID=L1
L=18 nH
size 1008
11
2
ID=ECP200D
3
10
4
9
ID=C8
C=3 pF
7.7 dB
+5 V
800 mA
15
1
ID=C2
C=56 pF
+25.3 dBm
(@ -45 dBc ACLR)
ID=C6
C=1000 pF
ID=C1
C=56 pF
+48 dBm
W-CDMA Channel Power
ID=R2
R=22 Ohm
ID=C4
C=1000 pF
ID=R3
R=51 Ohm
(+17 dBm / tone, 1 MHz spacing)
+5.6V Zener
ID=R1
R=15 Ohm
5
6
7
TLINP
ID=TL2
Z0=50 Ohm
L=75 mil
Eeff=3.16
Loss=0
F0=0 GHz
8
ID=C10
C=1.5 pF
ID=C9
C=3 pF
C9 should be placed at
silkscreen marker "2"
on the WJ evaluation board.
C8 should be placed at silk screen marker "D"
on the WJ evaluation board.
C10 should be placed at
silkscreen marker "4" on
the WJ evaluation board.
1. This corresponds to the quiescent current or operating current under
small-signal conditions into pins 10, 11, and 16.
S11 vs. Frequency
0
11
-5
+25°C
9
+25°C
-10
-15
-20
2120
-40°C
2130
+85°C
2140
2150
2160
-30
2110
2170
+25°C
2120
34
6
4
2
2130
2140
2150
2170
2160
2170
2140
2150
2160
ACPR vs. Channel Power
-40°C
+25°C
-45
-50
-55
+85°C
-40 C
+25 C
2120
2130
2140
2150
2160
22
2170
23
24
25
OIP3 vs. Temperature
OIP3 vs. Output Power
+25° C, +17 dBm/tone
freq. = 2140 MHz, 2141 MHz, +17 dBm/tone
freq. = 2140 MHz, 2141 MHz, +25° C
55
50
OIP3 (dBm)
OIP3 (dBm)
40
45
40
2130 2140 2150
Frequency (MHz)
2160
2170
35
-40
26
27
Output Channel Power (dBm)
OIP3 vs. Frequency
45
+85 C
-60
Frequency (MHz)
55
2170
3GPP W-CDMA, Test Model 1+64 DPCH, ±5 MHz offset, 2140 MHz
-35
30
26
2110
2130
+85°C
Frequency (MHz)
32
+85°C
50
2120
2120
-40°C
-40
Frequency (MHz)
55
2160
Circuit boards are optimized at 2140 MHz
28
2120
2150
ACPR (dBc)
8
P1dB (dBm)
36
+25°C
2140
P1dB vs. Frequency
10
-40°C
2130
-20
2110
Frequency (MHz)
Noise Figure vs. Frequency
NF (dB)
-10
-25
Frequency (MHz)
OIP3 (dBm)
+85°C
-15
8
35
2110
-40°C
S22 (dB)
10
0
2110
S22 vs. Frequency
0
-5
S11 (dB)
S21 (dB)
S21 vs. Frequency
12
7
2110
ID=C3
C=56 pF
50
45
40
35
-15
10
35
Temperature (°C)
60
85
12
14
16
18
Output Power (dBm)
20
22
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com
Page 5 of 6
April 2006
ECP200D
The Communications Edge TM
2 Watt, High Linearity InGaP HBT Amplifier
Product Information
ECP200D-G Mechanical Information
This package is lead-free/RoHS-compliant. It is compatible with both lead-free (maximum 260 °C reflow temperature) and leaded
(maximum 245 °C reflow temperature) soldering processes. The plating material on the pins is annealed matte tin over copper.
Outline Drawing
Product Marking
The component will be marked with an
“E200G” designator with an alphanumeric lot
code on the top surface of the package. The
obsolete tin-lead package is marked with an
“ECP200D” designator followed by an
alphanumeric lot code.
Tape and reel specifications for this part are
located on the website in the “Application
Notes” section.
ESD / MSL Information
ESD Rating:
Value:
Test:
Standard:
Class 1B
Passes between 500 and 1000V
Human Body Model (HBM)
JEDEC Standard JESD22-A114
MSL Rating: Level 2 at +260 °C convection reflow
Standard:
JEDEC Standard J-STD-020
Land Pattern
Mounting Config. Notes
1.
2.
3.
4.
5.
6.
7.
8.
Parameter
Rating
Operating Case Temperature
Thermal Resistance, Rth (1)
Junction Temperature, Tj (2)
-40 to +85 °C
17.5 °C / W
155 °C
Notes:
1. The thermal resistance is referenced from the junction-to-case at a case
temperature of 85° C. Tj is a function of the voltage at pins 10 and 11 and
the current applied to pins 10, 11, and 16 and can be calculated by:
Tj = Tcase + Rth * Vcc * Icc
2. This corresponds to the typical biasing condition of +5V, 800 mA at an 85
°C case temperature. A minimum MTTF of 1 million hours is achieved for
junction temperatures below 247 °C.
MTTF vs. GND Tab Temperature
100000
MTTF (million hrs)
Thermal Specifications
A heatsink underneath the area of the PCB for the mounted
device is highly recommended for proper thermal operation.
Damage to the device can occur without the use of one.
Ground / thermal vias are critical for the proper performance
of this device. Vias should use a .35mm (#80 / .0135”)
diameter drill and have a final plated thru diameter of .25
mm (.010”).
Add as much copper as possible to inner and outer layers
near the part to ensure optimal thermal performance.
Mounting screws can be added near the part to fasten the
board to a heatsink. Ensure that the ground / thermal via
region contacts the heatsink.
Do not put solder mask on the backside of the PC board in
the region where the board contacts the heatsink.
RF trace width depends upon the PC board material and
construction.
Use 1 oz. Copper minimum.
All dimensions are in millimeters (inches). Angles are in
degrees.
10000
1000
100
60
70
80
90
100
110
120
Tab Temperature (°C)
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com
Page 6 of 6
April 2006