ZCN0545A N-CHANNEL ENHANCEMENT MODE VERTICAL IGBT ZCN0545A ISSUE 2 MAY 94 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Forward Drain-Source Breakdown Voltage BVDSS 450 TYP. MAX. UNIT CONDITIONS. V VGS=0V Reverse Drain-Source Breakdown Voltage (4) BVSD 30 V ID=1mA Gate-Source Threshold Voltage VGS(th) 1 3 V ID=1mA, VDS= VGS Gate-Body Leakage IGSS 20 nA VGS=± 20V, VDS=0V Zero Gate Voltage Drain Current IDSS 10 400 µA µA VDS=max. rating, VGS=0 VDS=0.8 x max. rating, VGS=0V, T=125°C (2) Drain Source Saturation Voltage (1) VDS(SAT) 3 3 V V ID=500mA, VGS=10 V ID=250mA, VGS=5 V Static Drain-Source RDS(on) On-State Resistance (1) 6 Ω VGS=10V,ID=0.5A Input Capacitance (2) Ciss 90 pF Common Source Coss Output Capacitance (2) 12 pF Reverse Transfer Capacitance (2) Crss 6 pF Switching Times (2)(3) ton 150 ns 300 ns toff 200 VDS=25 V, VGS=0V, f=1MHz VDD ≈25V, VGEN=10V ID=1A, RGS=50Ω (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. (3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator (4) One minute maximum duration. Exceeds common international automotive reverse battery test specifications This IGBT combines the high input impedance of the DMOSFET with the high current density of the BJT. FEATURES * Extremely low on state voltage * No need to derate for higher temperatures * Excellent temperature immunity * High input impedance * Reverse blocking characteristic which is Independent of gate bias * Low input capacitance * Characterised for logic level drive APPLICATIONS * Fluorescent lamp driver * Automotive load drivers * High voltage DC-DC converters * Darlington replacement * Telecoms hook switch and earth recall switch t 1 t p D= t 1 t p 200 0.6 D=1 (DC) E-Line TO92 Compatible PARAMETER SYMBOL 80 40 Forward Drain-Source Voltage VDS 450 V VSD 30 V Continuous Drain Current ID 0.32 A IDP Practical Continuous Drain Current* 0.37 A IDMR IDM 2 1 A A VGS ±20 V Power Dissipation at Tamb=25°C Ptot 0.6 W Practical Power Dissipation* PDP 0.8 W Operating and Storage Temperature Range Tj:Tstg -55 to +125 °C Pulsed Drain Current @ Tamb=25°C @ Tamb=125°C D=0.5 D=0.2 D=0.1 0 SINGLE PULSE 0 0 25 50 75 100 125 100us Temperature 1ms 10ms 100ms 1s 10s 100s Pulse Width Derating Curve Transient Thermal Resistance 3-113 UNIT Reverse Drain Source Voltage 120 0.2 VALUE * With the device mounted in a typical manner on a P.C.B. with at least 1 sq. inch of copper. 160 0.4 S ABSOLUTE MAXIMUM RATINGS (at Tamb=25°C unless otherwise stated) Gate-Source Voltage 0.8 D G 3-112 ZCN0545A N-CHANNEL ENHANCEMENT MODE VERTICAL IGBT ZCN0545A ISSUE 2 MAY 94 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Forward Drain-Source Breakdown Voltage BVDSS 450 TYP. MAX. UNIT CONDITIONS. V VGS=0V Reverse Drain-Source Breakdown Voltage (4) BVSD 30 V ID=1mA Gate-Source Threshold Voltage VGS(th) 1 3 V ID=1mA, VDS= VGS Gate-Body Leakage IGSS 20 nA VGS=± 20V, VDS=0V Zero Gate Voltage Drain Current IDSS 10 400 µA µA VDS=max. rating, VGS=0 VDS=0.8 x max. rating, VGS=0V, T=125°C (2) Drain Source Saturation Voltage (1) VDS(SAT) 3 3 V V ID=500mA, VGS=10 V ID=250mA, VGS=5 V Static Drain-Source RDS(on) On-State Resistance (1) 6 Ω VGS=10V,ID=0.5A Input Capacitance (2) Ciss 90 pF Common Source Coss Output Capacitance (2) 12 pF Reverse Transfer Capacitance (2) Crss 6 pF Switching Times (2)(3) ton 150 ns 300 ns toff 200 VDS=25 V, VGS=0V, f=1MHz VDD ≈25V, VGEN=10V ID=1A, RGS=50Ω (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. (3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator (4) One minute maximum duration. Exceeds common international automotive reverse battery test specifications This IGBT combines the high input impedance of the DMOSFET with the high current density of the BJT. FEATURES * Extremely low on state voltage * No need to derate for higher temperatures * Excellent temperature immunity * High input impedance * Reverse blocking characteristic which is Independent of gate bias * Low input capacitance * Characterised for logic level drive APPLICATIONS * Fluorescent lamp driver * Automotive load drivers * High voltage DC-DC converters * Darlington replacement * Telecoms hook switch and earth recall switch t 1 t p D= t 1 t p 200 0.6 D=1 (DC) E-Line TO92 Compatible PARAMETER SYMBOL 80 40 Forward Drain-Source Voltage VDS 450 V VSD 30 V Continuous Drain Current ID 0.32 A IDP Practical Continuous Drain Current* 0.37 A IDMR IDM 2 1 A A VGS ±20 V Power Dissipation at Tamb=25°C Ptot 0.6 W Practical Power Dissipation* PDP 0.8 W Operating and Storage Temperature Range Tj:Tstg -55 to +125 °C Pulsed Drain Current @ Tamb=25°C @ Tamb=125°C D=0.5 D=0.2 D=0.1 0 SINGLE PULSE 0 0 25 50 75 100 125 100us Temperature 1ms 10ms 100ms 1s 10s 100s Pulse Width Derating Curve Transient Thermal Resistance 3-113 UNIT Reverse Drain Source Voltage 120 0.2 VALUE * With the device mounted in a typical manner on a P.C.B. with at least 1 sq. inch of copper. 160 0.4 S ABSOLUTE MAXIMUM RATINGS (at Tamb=25°C unless otherwise stated) Gate-Source Voltage 0.8 D G 3-112 ZCN0545A TYPICAL CHARACTERISTICS GS=10V 9V V 2.0 2.0 NOTE : 80µs Pulsed test 1.8 8V 1.6 1.6 1.4 7V 1.2 1.2 1.0 6V 0.8 0.8 5V 0.6 0.4 0.4 4V 0.2 3V 0 0 2 4 6 8 0 10 0 50 100 125 VDS - Drain Source Voltage (V) TJ - Juntion Temperature (°C) Saturation Characteristics Pulsed Current v Temperature 0.5 80 C iss 0.4 60 0.3 NOTE : V 40 GS=0V 0.2 NOTE : 80µs Pulsed test V =0V DS 20 0.1 C C oss rss 0 0 1 10 0 100 VDS - Drain Source Voltage (V) 0.4 0.8 1.2 1.6 2.0 ID - Drain Current (A) Capacitance v Drain Source Voltage Transconductance v Drain Current 10 3.5 µ 3.0 1 V DS 2.5 =0V 2.0 1.5 1s DC 0.1s 1 ms 1 00us 0.1 1.0 0.5 0 0.01 1 10 100 1000 0.01 0.1 1 VDS - Drain Source Voltage (V) ID - Drain Current (A) Safe Operating Area (Tamb=25°C, single pulse) Fall Time v Drain Current 3-114 10