N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET VN2222LL ISSUE 2 – FEB 94 S G D TO92 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 60 V Continuous Drain Current at Tamb = 25°C ID 150 mA Pulsed Drain Current IDM 1 A Gate Source Voltage VGS ± 40 V Power Dissipation at Tamb = 25°C Ptot 400 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage BVDSS 60 Gate-Source Breakdown Voltage VGS(th) 0.6 MAX. UNIT CONDITIONS. V ID=100µA, VGS=0V 2.5 V ID=1mA, VDS= VGS Gate Body Leakage IGSS 100 nA VGS=± 30V, VDS=0V Zero Gate Voltage Drain Current (1) IDSS 10 500 µA µA VDS=48 V, VGS=0V VDS=48 V, VGS=0V, T=125°C On State Drain Current(1) ID(on) mA VDS=10 V, VGS=10V Static Drain Source On State Voltage (1) VDS(on) 3.75 1.50 V V VGS=10V,ID=500mA VGS=5V, ID=200mA Static Drain Source On State Resistance (1) RDS(on) 7.5 Ω VGS=10V,ID=500mA Forward Transconductance (1)(2) gfs mS VDS=10V,ID=500mA 750 100 Input Capacitance (2) Ciss 60 pF Common Source Output Capacitance (2) Coss 25 pF Reverse Transfer Capacitance (2) Crss 5 pF Turn-On Time (2)(3) t(on) 10 ns Turn-Off Time (2)(3) t(off) 10 ns VDS=25 V, VGS=0V f=1MHz VDD ≈15V, ID=600mA (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%, (2) Sample test. (3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator 3-91