N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN0120A ISSUE 2 – MARCH 94 FEATURES * 200 Volt VDS * RDS(on)=16Ω APPLICATIONS * Telephone handsets D G S E-Line TO92 Compatible REFER TO ZVN0124A FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage V DS 200 V Continuous Drain Current at T amb=25°C ID 160 mA Pulsed Drain Current I DM 2 A Gate Source Voltage V GS ± 20 V Power Dissipation at T amb=25°C P tot 700 mW Operating and Storage Temperature Range T j :T stg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage BV DSS 200 Gate-Source Threshold Voltage V GS(th) 1 MAX. 3 UNIT CONDITIONS. V I D=1mA, V GS=0V V ID=1mA, V DS= V GS Gate-Body Leakage I GSS 20 nA V GS=± 20V, V DS=0V Zero Gate Voltage Drain Current I DSS 10 100 µA µA V DS=200 V, V GS=0 V DS=160 V, V GS=0V, T=125°C (2) On-State Drain Current(1) I D(on) Static Drain-Source On-State Resistance (1) R DS(on) Forward Transconductance (1)(2) g fs 500 16 100 mA V DS=25 V, V GS=10V Ω V GS=10V,I D=250mA mS V DS=25V,I D=250mA Input Capacitance (2) C iss 85 pF Common Source Output Capacitance (2) C oss 20 pF Reverse Transfer Capacitance (2) C rss 7 pF Turn-On Delay Time (2)(3) t d(on) 7 ns Rise Time (2)(3) tr 8 ns Turn-Off Delay Time (2)(3) t d(off) 16 ns Fall Time (2)(3) tf 8 ns V DS=25 V, V GS=0V, f=1MHz V DD ≈25V, I D=250mA (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% 3-349 Sample test. ( 2 )