TI SN74CB3Q32245GKER

SCES622 – JANUARY 2005
D Member of the Texas Instruments
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D Data and Control Inputs Provide
Widebus+ Family
High-Bandwidth Data Path
(Up to 500 MHz†)
5-V-Tolerant I/Os with Device Powered Up
or Powered Down
Low and Flat ON-State Resistance (ron)
Characteristics Over Operating Range
(ron = 5 Ω Typical)
Rail-to-Rail Switching on Data I/O Ports
− 0- to 5-V Switching With 3.3-V VCC
− 0- to 3.3-V Switching With 2.5-V VCC
Bidirectional Data Flow, With Near-Zero
Propagation Delay
Low Input/Output Capacitance Minimizes
Loading and Signal Distortion
(Cio(OFF) = 4 pF Typical)
Fast Switching Frequency
(fOE = 20 MHz Max)
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† For additional information regarding the performance
characteristics of the CB3Q family, refer to the TI
application report, CBT-C, CB3T, and CB3Q
Signal-Switch Families, literature number SCDA008.
Undershoot Clamp Diodes
Low Power Consumption
(ICC = 2 mA Typical)
VCC Operating Range From 2.3 V to 3.6 V
Data I/Os Support 0- to 5-V Signaling
Levels (0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V,
5 V)
Control Inputs Can be Driven by TTL or
5-V/3.3-V CMOS Outputs
Ioff Supports Partial-Power-Down Mode
Operation
Latch-Up Performance Exceeds 100 mA Per
JESD 78, Class II
ESD Performance Tested Per JESD 22
− 2000-V Human-Body Model
(A114-B, Class II)
− 1000-V Charged-Device Model (C101)
Supports Both Digital and Analog
Applications: PCI Interface, Differential
Signal Interface, Memory Interleaving, Bus
Isolation, Low-Distortion Signal Gating
description/ordering information
The SN74CB3Q32245 is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage
of the pass transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance
allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The
device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data
bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q32245 provides an optimized
interface solution ideally suited for broadband communications, networking, and data-intensive computing
systems.
The SN74CB3Q32245 is organized as four 8-bit bus switches with separate output-enable (1OE, 2OE, 3OE,
4OE) inputs. It can be used as four 8-bit bus switches, two 16-bit bus switches, or as one 32-bit bus switch. When
OE is low, the associated 8-bit bus switch is ON and the A port is connected to the B port, allowing bidirectional
data flow between ports. When OE is high, the associated 8-bit bus switch is OFF, and a high-impedance state
exists between the A and B ports.
ORDERING INFORMATION
−40°C to 85°C
ORDERABLE
PART NUMBER
PACKAGE‡
TA
LFBGA − GKE
Tape and reel
SN74CB3Q32245GKER
LFBGA − ZKE (Pb-free)
Tape and reel
SN74CB3Q32245ZKER
TOP-SIDE
MARKING
BZ245
‡ Package drawings, standard packing quantities, thermal data, symbolization, and PCB design guidelines are
available at www.ti.com/sc/package.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Widebus+ is a trademark of Texas Instruments.
Copyright  2005, Texas Instruments Incorporated
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SCES622 – JANUARY 2005
description/ordering information (continued)
This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry prevents damaging
current backflow through the device when it is powered down. The device has isolation during power off.
To ensure the high-impedance state during power up or power down, OE should be tied to VCC through a pullup
resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.
FUNCTION TABLE
(each 8-bit bus switch)
GKE PACKAGE
(TOP VIEW)
1
3
4
5
INPUT/OUTPUT
A
FUNCTION
L
B
A port = B port
H
Z
Disconnect
terminal assignments
6
1
2
3
4
5
6
A
A
1B2
1B1
NC
1OE
1A1
1A2
B
B
1B4
1B3
GND
GND
1A3
1A4
C
C
1B6
1B5
1A6
1B8
1B7
VCC
GND
1A5
D
VCC
GND
1A7
1A8
E
2B2
2B1
GND
GND
2A1
2A2
F
2B4
2B3
2A4
2B6
2B5
VCC
GND
2A3
G
VCC
GND
2A5
2A6
H
2B7
2B8
NC
2OE
2A8
2A7
D
E
F
G
H
J
3B2
3B1
NC
3OE
3A1
3A2
J
K
3B4
3B3
GND
GND
3A3
3A4
K
L
3B6
3B5
3A6
M
3B8
3B7
VCC
GND
3A5
L
VCC
GND
3A7
3A8
M
N
4B2
4B1
GND
GND
4A1
4A2
N
P
4B4
4B3
4B6
4B5
VCC
GND
4A4
R
VCC
GND
4A3
P
4A5
4A6
R
T
4B7
4B8
NC
4OE
4A8
4A7
T
2
2
INPUT
OE
NC − No internal connection
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SCES622 – JANUARY 2005
logic diagram (positive logic)
A2
A5
1A1
SW
2A1
1B8
2A8
D1
D6
1A8
SW
E2
E5
1B1
H2
H5
A4
2B1
SW
2B8
SW
H4
1OE
2OE
J5
3A1
J2
SW
4A1
3B8
4A8
M1
M6
3A8
N5
3B1
SW
N2
T2
T5
J4
4B1
SW
SW
4B8
T4
3OE
4OE
simplified schematic, each FET switch (SW)
A
B
VCC
Charge
Pump
EN†
† EN is the internal enable signal applied to the switch.
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SCES622 – JANUARY 2005
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)†
Supply voltage range, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.5 V to 4.6 V
Control input voltage range, VIN (see Notes 1 and 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.5 V to 7 V
Switch I/O voltage range, VI/O (see Notes 1, 2, and 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.5 V to 7 V
Control input clamp current, IIK (VIN < 0) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −50 mA
I/O port clamp current, II/OK (VI/O < 0) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −50 mA
ON-state switch current, II/O (see Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±64 mA
Continuous current through VCC or GND terminals . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±100 mA
Package thermal impedance, θJA (see Note 5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40°C/W
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65°C to 150°C
† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES: 1. All voltages are with respect to ground, unless otherwise specified.
2. The input and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
3. VI and VO are used to denote specific conditions for VI/O.
4. II and IO are used to denote specific conditions for II/O.
5. The package thermal impedance is calculated in accordance with JESD 51-7.
recommended operating conditions (see Note 6)
VCC
Supply voltage
VIH
High-level control input voltage
VIL
Low-level control input voltage
VI/O
TA
Data input/output voltage
MIN
MAX
2.3
3.6
VCC = 2.3 V to 2.7 V
VCC = 2.7 V to 3.6 V
VCC = 2.3 V to 2.7 V
1.7
5.5
2
5.5
0
0.7
VCC = 2.7 V to 3.6 V
0
0.8
0
5.5
V
−40
85
°C
Operating free-air temperature
UNIT
V
V
V
NOTE 6: All unused control inputs of the device must be held at VCC or GND to ensure proper device operation. Refer to the TI application report,
Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
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electrical characteristics over recommended operating free-air temperature range (unless
otherwise noted)
PARAMETER
VIK
IIN
TEST CONDITIONS
MIN
VCC = 3.6 V,
VCC = 3.6 V,
II = −18 mA
VIN = 0 to 5.5 V
IOZ‡
VCC = 3.6 V,
VO = 0 to 5.5 V,
VI = 0,
Switch OFF,
VIN = VCC or GND
Ioff
VCC = 0,
VI = 0
ICC
VCC = 3.6 V,
VO = 0 to 5.5 V,
II/O = 0,
Switch ON or OFF,
Control inputs
∆ICC§
Control inputs
ICCD¶
Per control
input
VCC = 3.6 V,
One input at 3 V,
VCC = 3.6 V,
A and B ports open,
Control input switching at 50% duty cycle
Cin
Control inputs
VCC = 3.3 V,
VIN = VCC or GND
TYP†
2
Other inputs at VCC or GND
MAX
UNIT
−1.8
V
±1
µA
±1
µA
1
µA
4
mA
30
VIN = 5.5 V, 3.3 V, or 0
Switch OFF,
VI/O = 5.5 V, 3.3 V, or 0
VIN = VCC or GND,
0.15
0.25
3.5
5
pF
4
6
pF
10
13
pF
Cio(OFF)
VCC = 3.3 V,
Cio(ON)
VCC = 3.3 V,
Switch ON,
VIN = VCC or GND,
VI/O = 5.5 V, 3.3 V, or 0
VCC = 2.3 V,
TYP at VCC = 2.5 V
VI = 0,
VI = 1.7 V,
IO = 30 mA
IO = −15 mA
6
8
5
10
VCC = 3 V
VI = 0,
VI = 2.4 V,
IO = 30 mA
IO = −15 mA
6
8
5
9
ron#
µA
mA/
MHz
Ω
VIN and IIN refer to control inputs. VI, VO, II, and IO refer to data pins.
† All typical values are at VCC = 3.3 V (unless otherwise noted), TA = 25°C.
‡ For I/O ports, the parameter IOZ includes the input leakage current.
§ This is the increase in supply current for each input that is at the specified TTL voltage level, rather than VCC or GND.
¶ This parameter specifies the dynamic power-supply current associated with the operating frequency of a single control input (see Figure 2).
# Measured by the voltage drop between the A and B terminals at the indicated current through the switch. ON-state resistance is determined by
the lower of the voltages of the two (A or B) terminals.
switching characteristics over recommended operating free-air temperature range (unless
otherwise noted) (see Figure 3)
PARAMETER
fOE||
tpdk
ten
FROM
(INPUT)
TO
(OUTPUT)
VCC = 2.5 V
± 0.2 V
MIN
MAX
VCC = 3.3 V
± 0.3 V
MIN
UNIT
MAX
OE
A or B
10
20
MHz
A or B
B or A
0.18
0.3
ns
OE
A or B
7
ns
1.5
8
1.5
tdis
A or B
1
8
1
7
ns
OE
|| Maximum switching frequency for control input (VO > VCC, VI = 5 V, RL ≥ 1 MΩ, CL = 0)
k The propagation delay is the calculated RC time constant of the typical ON-state resistance of the switch and the specified load capacitance,
when driven by an ideal voltage source (zero output impedance).
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SCES622 – JANUARY 2005
ron − ON−State Resistance − Ω
16
VCC = 3.3 V
TA = 25°C
IO = −15 mA
14
12
10
8
6
4
2
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VI − V
Figure 1. Typical ron vs VI
12
VCC = 3.3 V
TA = 25°C
A and B ports Open
10
ICC − mA
8
6
4
One OE Switching
2
0
0
2
4
6
8
10
12
14
OE Switching Frequency − MHz
Figure 2. Typical ICC vs OE Switching Frequency
6
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SCES622 – JANUARY 2005
PARAMETER MEASUREMENT INFORMATION
VCC
Input Generator
VIN
50 Ω
50 Ω
VG1
TEST CIRCUIT
DUT
Input Generator
VI
S1
RL
VO
50 Ω
VG2
CL
(see Note A)
RL
TEST
VCC
S1
RL
VI
CL
tpd(s)
2.5 V ± 0.2 V
3.3 V ± 0.3 V
Open
Open
500 Ω
500 Ω
VCC or GND
VCC or GND
30 pF
50 pF
tPLZ/tPZL
2.5 V ± 0.2 V
3.3 V ± 0.3 V
2 × VCC
2 × VCC
500 Ω
500 Ω
GND
GND
30 pF
50 pF
0.15 V
0.3 V
tPHZ/tPZH
2.5 V ± 0.2 V
3.3 V ± 0.3 V
GND
GND
500 Ω
500 Ω
VCC
VCC
30 pF
50 pF
0.15 V
0.3 V
Output
Control
(VIN)
V∆
VCC
VCC/2
VCC
VCC/2
0V
tPLH
VOH
Output
VCC/2
Output
Waveform 1
S1 at 2 × VCC
(see Note B)
tPLZ
VCC
VCC/2
tPZH
tPHL
VCC/2
VOL
VCC/2
0V
tPZL
VCC/2
Open
GND
50 Ω
Output
Control
(VIN)
2 × VCC
Output
Waveform 2
S1 at GND
(see Note B)
VOLTAGE WAVEFORMS
PROPAGATION DELAY TIMES (tpd(s))
VOL + V∆
VOL
tPHZ
VCC/2
VOH − V∆
VOH
0V
VOLTAGE WAVEFORMS
ENABLE AND DISABLE TIMES
NOTES: A. CL includes probe and jig capacitance.
B. Waveform 1 is for an output with internal conditions such that the output is low, except when disabled by the output control.
Waveform 2 is for an output with internal conditions such that the output is high, except when disabled by the output control.
C. All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr ≤ 2.5 ns, tf ≤ 2.5 ns.
D. The outputs are measured one at a time, with one transition per measurement.
E. tPLZ and tPHZ are the same as tdis.
F. tPZL and tPZH are the same as ten.
G. tPLH and tPHL are the same as tpd(s). The tpd propagation delay is the calculated RC time constant of the typical ON-state
resistance of the switch and the specified load capacitance, when driven by an ideal voltage source (zero output impedance).
H. All parameters and waveforms are not applicable to all devices.
Figure 3. Test Circuit and Voltage Waveforms
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