01.08.28 ♦ Features • Up to 2.7 Gb/s (FEC available) high speed operation • Clocked (MS-D/FF) or Non-clocked operation can be selected • Disable function of modulation current and bias current • Bias current monitoring • Mark density monitoring • +5 V or -5 V single power supply • Up to 60 mA p-p modulation current • Up to 50 mA bias current • Differential ECL compatible interface • On-chip 50 Ω terminations • Internal voltage reference for AC coupling F0522501Q 2.7 Gb/s NRZ Data Rate Laser Diode Driver ♦ Applications • Laser diode driver of an optical transmitter circuit up to 2.7 Gb/s (FEC available) ♦ Functional Description The F0522501Q is a high performance GaAs laser diode driver IC applicable in an optical transmitter circuit up to 2.7 Gb/s NRZ data rate (especially suitable for SDH [STM-16] / SONET [OC-48]) , featuring the capable operation for the FEC signal. The F0522501Q specifies the rise time and the fall time of 70 ps (20 %-80 %) typically. It features the single +5 V or -5 V supply operation, the modulation current between 1 mA and 60 mA, and the bias current between 1 mA and 50 mA while the dissipating power is around the typical value of 1 W. F0522501Q 2.7 Gb/s Laser Diode Driver ♦ Absolute Maximum Ratings Ta=25 °C, unless specified Parameter Symbol Value Units Supply Voltage VDD-VSS - 0.5 to +7.0 V Supply Current Icon 250 mA VIN VSS to VDD+0.5 V Input Voltage (DISIN ,SELIN) VINC1 VSS to VDD+0.5 V Input Voltage (VMIN ,VBIN) VINC2 VSS to VSS+1.5 V Output Voltage (OUT,OUTB,OUTBIAS) VOUT VDD-2.0 to VDD+0.5 V Output Voltage (MRK,MRKB,BM,BMB) VOUTM VSS to VDD+0.5 V Termination Voltage (VTTD ,VTTCK) VTT VDD-2.5 to VDD+0.5 V Storage Temperature Tstg -55 to +125 °C Ta 0 to +70 °C Input Voltage (DIN ,DINB ,CKIN ,CKINB) Ambient Operating Temperature ♦ Recommended Operating Conditions Parameter Value Symbol Units Min. Typ. Max. Supply Voltage VDD-VSS 4.75 5.00 5.46 V Output Voltage VOUT VDD-1.6 VDD-1.0 VDD V Ta 0 25 70 °C Ambient Operating Temperature F0522501Q 2.7 Gb/s Laser Diode Driver ♦ Electrical Characteristics Ta=25 °C, VDD- VSS=4.75 to 5.46 V Value Parameter Circuit Current (1) Input Voltage (ECL) Symbol ICKT VIH Test Conditions VMIN =VBIN=VSS Differential Input VI L Input Voltage (AC) VIN Input Resistor RI N Modulation Peak Current(2) Bias Current Input Voltage (SEL) Input Voltage (DIS) Differential Input - Units Min. Typ. Max. - 100 130 mA VDD-1.0 VDD-0.9 VDD-0.7 V VDD-1.9 VDD-1.7 VDD-1.6 V 0.6 0.8 1.2 Vp-p - 50 - Ω 60 - - mA IMMAX VMIN =VSS+1.5V IMMIN VMIN =VSS - - 1.0 mA IMDIS VDISIN=VDD-1.5V - - 0.5 mA IBMAX VBIN=VSS+1.5V 50 - - mA IBMIN VBIN=VSS - - 1.0 mA IBDIS VDISIN=VDD-1.5V - - 0.5 mA VSELIH Non-Clocked op. VDD-1.5 - VDD V VSELIL Clocked opelation VSS OPEN VSS+1.5 V VDISIH Disable opelation VDD-1.5 - VDD V VDISIL Enable opelation VSS OPEN VSS+1.5 V - 10 - Ω Differential Mode Date: All "H" - 1.2 - V Bias Monitor Resistor RBM Mark Density Monitor Voltage ∆(VMRK-VMRKB) Rise Time(3) tr RL = 15Ω 20% - 80% - 70 150 ps Fall Time(3) tf RL = 15Ω 80% - 20% - 70 150 ps Setup Time ts - 100 - ps Hold Time th - 50 - ps Maximum Clock Frequency fmax VSEL=OPEN or VSS to VSS+1.5V 2.7 - - GHz Maximum Data Rate fopr VSEL=VDD-1.5V to VDD 2.7 - - Gbps (1) Excluding the input current, the modulation current and the bias current. (2) Modulation peak current is measured at "OUT" pin. (3) Rise time and fall time are measured at "OUT" pin. F0522501Q 2.7 Gb/s Laser Diode Driver ♦ Block Diagram MRK MRKB RMRK DIN VTTD DINB + Input Buffer – D/FF Selector Vref Generator CKIN VTTCK CKINB + Input Buffer – RMRKB + OUT Mod. Circuit OUTB – ROUTB OUTBIAS VMIN RBMO BM Control Circuit SELIN DISIN Bias circuit RBM BMb RBMOB VBIN ♦ Pin Descriptions DIN : Positive data input DINB : Negative data input VTTD : Termination for data input CKIN : Positive clock input CKINB : Negative clock input VTTCK : Termination for clock input OUT : Positive modulation output (LD should be connected to this pin.) OUTB : Negative modulation output (ROUTB=15 Ω typ.) OUTBIAS : Bias output (RBM=10 Ω typ., RBMO=RBMOB=3 kΩ typ.) VMIN : Voltage input that sets the LD modulation peak current VBIN : Voltage input that sets the LD bias current DISIN : Voltage input that controls turning on/off the modulation current and the bias current SELIN : Voltage input that selects clocked or non-clocked operation BM : Bias current monitor positive output BMB : Bias current monitor negative output MRK : Mark density monitor positive output (RMRK=25 kΩ typ.) MRKB : Mark density monitor negative output (RMRKB=25 kΩ typ.) F0522501Q 2.7 Gb/s Laser Diode Driver ♦ Function Table (1) Clocked Operation (VIN@SELIN=OPEN or VSS to VSS+1.5V) Output Input DIN CKIN Current@OUT Current@OUTB H ↑ ON OFF L ↑ OFF ON Φ L QO QOB ↑ Φ QO QOB : Clock transition from low to high : Don't care : Previous current output status @OUT before clock pulse : Previous current output status @OUTB before clock pulse (2) Non-clocked Operation (VIN@SELIN=VDD-1.5V to VDD) Output Input DIN CKIN Current@OUT Current@OUTB H Φ ON OFF L Φ OFF ON F0522501Q 2.7 Gb/s Laser Diode Driver ♦ Pin Assignments (Top View) 16 15 14 13 12 11 17 10 18 9 SUMITOMO ELECTRIC 0522501 #### 19 20 1 1 2 3 4 5 6 7 8 9 :DINB :VTTD :DIN :CKIN :VTTCK :CKINB :SELIN :VDDC :VDDO 8 No.1 LEAD IDENTIFIER 2 3 4 10 11 12 13 14 15 16 17 18 :BMB :BM :OUTBIAS :OUT :OUTB :DNC :VMIN :VBIN :MRKB 7 5 6 19 :MRK 20 :DISIN (*) The pins without numbering should be connected to VSS. (**) VDDC and VDDO are not connected internally. (***) DNC is a no user connection pin. F0522501Q 2.7 Gb/s Laser Diode Driver ♦ Test Circuits (1) DC Characteristics VSS Multimeter 2200p 0.022µ A 2200p A 0.022µ 0.022µ 0.022µ DISIN DINB VTTD DIN A VSS CKIN VTTCK CKINB MRK VSS SUMITOMO ELECTRIC 0522501 #### DC Source/ Monitor Unit VBIN MRKB VMIN DC Source/ Monitor Unit DNC OUTB A VSS OUT OUTBIAS BM VDDC VSS SELIN VDDO BMB 0.022µ A Multimeter F0522501Q 2.7 Gb/s Laser Diode Driver (2) AC Characteristics VSS Multimeter 2200p 0.022µ A 2200p A DC 0.022µ 0.022µ Source/ 0.022µ DISIN DINB MRK Pulse Pattern Generator DIN A VSS CKIN VTTCK CKINB VSS SUMITOMO ELECTRIC 0522501 #### VTTD Monitor Unit VBIN MRKB VMIN DNC OUTB 22 A VSS OUT 22 OUTBIAS BM VDDC VSS SELIN VDDO BMB 0.022µ A Sampling Oscilloscope F0522501Q 2.7 Gb/s Laser Diode Driver ♦ Typical Characteristics Modulation Current vs Vin @ DIN Leak Current of Modulation 100 80 60 40 Ta=25°C 20 0 -2 -1.5 -1 -0.5 0 Modulation Current (µA) @OUT Modulation Current (mA) @OUT (1) Modulation Current 100 60 40 20 0 -50 Input Voltage (V) @ DIN 100 Ta=-44°C Ta=0°C Ta=25°C Ta=70°C Ta=85°C 60 40 20 0 -5 -4.5 -4 -3.5 Control Voltage (V) @ VMIN Conditions VOUT@OUT=GND VDD= GND , VSS= -5 V, VIN@DIN=-1.0 V VIN@DINB=-1.3 V, VBIN=VSS VOUT@OUTB , OUTBIAS=GND 50 100 Conditions VDD=GND, VIN@DIN=-1.6 V, VIN@DINB=-1.3 V VMIN@IMpeak=60 mA, VBIN=VSS VOUT@OUT, OUTB , OUTBIAS=GND Modulation Current vs VMIN 80 0 Ambient Operating Temperature (°C) -3 Modulation Current (mA) @OUT Modulation Current (mA) @OUT Conditions VDD=GND, VSS=-5 V, VIN@DINB=-1.3 V VMIN@IMpeak=60 mA, VBIN=VSS VOUT@OUT, OUTB , OUTBIAS=GND VSS=-5.50V VSS=-5.25V VSS=-5.00V VSS=-4.75V 80 Modulation Current vs VMIN 100 Ta=-44°C Ta=0°C Ta=25°C Ta=70°C Ta=85°C 80 60 40 20 0 -5 -4.5 -4 -3.5 Control Voltage (V) @ VMIN Conditions VOUT@OUT=-1.6 V VDD= GND, VSS= -5 V, VIN@DIN=-1.0 V VIN@DINB=-1.3 V, VBIN=VSS VOUT@OUTB , OUTBIAS=GND -3 F0522501Q 2.7 Gb/s Laser Diode Driver (2) Bias Current Bias Current vs Vin @ DISIN Leak Current of Bias 100 Bias Current (µA) Bias Current (mA) 100 80 60 40 20 0 Ta=25°C -5 -4 -3 -2 -1 VSS=-5.50V VSS=-5.25V VSS=-5.00V VSS=-4.75V 80 60 40 20 0 -50 0 Input Voltage (V) @ DISIN 100 Conditions VDD=GND, VIN@DIN=-1.0 V, VIN@DINB=-1.3 V VIN@DISIN=-1.5 V, VMIN=VSS VBIN@IB=60 mA VOUT@OUT, OUTB , OUTBIAS=GND Bias Current vs VBIN Bias Current vs VBIN 100 80 60 40 20 -5 -4.5 -4 Ta=-44°C Ta=0°C Ta=25°C Ta=70°C Ta=85°C -3.5 -3 Control Voltage (V) @ VBIN Conditions VOUT@OUTBIAS=GND VDD= GND , VSS= -5 V, VIN@DIN=-1.0 V VIN@DINB=-1.3 V, VMIN=VSS VOUT@OUT, OUTB =GND Bias Current (mA) 100 Bias Current (mA) 50 Ambient Operating Temperature (°C) Conditions VDD=GND, VSS=-5 V, VIN@DIN=-1.0 V VIN@DINB=-1.3 V, VMIN=VSS VBIN@IB=60mA VOUT@OUT, OUTB , OUTBIAS=GND 0 0 80 60 40 20 0 -5 -4.5 -4 Ta=-44°C Ta=0°C Ta=25°C Ta=70°C Ta=85°C -3.5 -3 Control Voltage (V) @ VBIN Conditions VOUT@OUTBIAS =-1.6 V VDD= GND, VSS= -5 V, VIN@DIN=-1.0 V VIN@DINB=-1.3 V, VMIN=VSS VOUT@OUT, OUTB =GND F0522501Q 2.7 Gb/s Laser Diode Driver (3) Circuit Current Circuit Current Circuit Current (mA) 130 VSS=-5.50V VSS=-5.25V VSS=-5.00V VSS=-4.75V 120 110 100 90 80 -50 0 50 100 Ambient Operating Temperature (°C) Conditions VDD=GND, VIN@DIN=-1.0V VIN@DINB=-1.3 V, VMIN=VSS , VBIN=VSS VOUT@OUT, OUTB , OUTBIAS =GND (4) Signal Input Resistor and Bias Monitor Resistor Signal Input Resistor Bias Monitor Resistor 11 Resitance (Ω) Resitance (Ω) 60 55 50 VSS=-5.50V VSS=-5.25V VSS=-5.00V VSS=-4.75V 45 40 -50 0 50 100 Ambient Operating Temperature (°C) Conditions VDD =GND, VSS= -5 V, VIN@DIN=-1.0 V VIN@DINB=-1.3 V, VMIN=VSS , VBIN=VSS VOUT@OUT, OUTB , OUTBIAS =GND VSS=-5.50V VSS=-5.25V VSS=-5.00V VSS=-4.75V 10 9 -50 0 50 100 Ambient Operating Temperature (°C) Conditions VDD =GND, VSS= -5 V, VIN@DIN=-1.0 V VIN@DINB=-1.3V, VMIN=VSS , VBIN@IB=60 mA VOUT@OUT, OUTB , OUTBIAS =GND F0522501Q 2.7 Gb/s Laser Diode Driver (5) Mark Density Monitor Voltage Monitor Output vs Mark Density ∆VMRK (V) 2.0 1.0 0.0 -1.0 -2.0 0 20 40 60 80 100 Mark Density (%) Conditions (See test circuits for AC characteristics) VDD=GND, VSS=-5 V, @2.48832 Gb/s, PRBS223-1 VIN@DIN , DINB , CKIN , CKINB=-0.9 V/-1.7 V VMIN@IMpeak=60 mA, VBIN=VSS VOUT@OUTBIAS=GND, Ta=25 °C Monitor Output @ All“H”Data Monitor Output @ All“L”Data 0.0 1.5 ∆VMRK(V) ∆VMRK(V) 2.0 1.0 VSS=-5.50V VSS=-5.25V VSS=-5.00V VSS=-4.75V 0.5 0.0 -50 0 50 VSS=-5.50V VSS=-5.25V VSS=-5.00V VSS=-4.75V -0.5 -1.0 -1.5 100 Ambient Operating Temperature (°C) Conditions VDD=GND, VIN@DIN=-1.0 V, VIN@DINB=-1.3 V VMIN@IMpeak=60 mA, VBIN=VSS VOUT@OUT, OUTB , OUTBIAS=GND -2.0 -50 0 50 100 Ambient Operating Temperature (°C) Conditions VDD=GND, VIN@DIN=-1.6 V, VIN@DINB=-1.3 V VMIN@IMpeak=60 mA, VBIN=VSS VOUT@OUT, OUTB , OUTBIAS=GND F0522501Q 2.7 Gb/s Laser Diode Driver (6)-(a) Erectrical Output Waveform @Clocked Operation 200 mV/div 100 ps/div Conditions Ta=25 °C, VDD=GND, VSS=-5 V, DIN :VIL=-1.7V,VIH=-0.9V,DINB=-1.3V,@2.5 Gb/s, PRBS223-1 CKIN:VIL=-1.7V,VIH=-0.9V.CKINB=-1.3V,f=2.5GHz VM=-3.9V,VB=-5.0V,RL=15 ohms 200 mV/div 100 ps/div Conditions Ta=25 °C, VDD=GND, VSS=-5 V, DIN :VIL=-1.7V,VIH=-0.9V,DINB=-1.3V,@2.5 Gb/s, PRBS223-1 CKIN:VIL=-1.7V,VIH=-0.9V.CKINB=-1.3V,f=2.7GHz VM=-3.9V,VB=-5.0V,RL=15 ohms 2.7 Gb/s Laser Diode Driver F0522501Q (6)-(b) Erectrical Output Waveform @non-Clocked Operation Conditions Ta=25 °C, VDD=GND, VSS=-5 V, DIN :VIL=-1.7V,VIH=-0.9V,DINB=-1.3V,@2.5 Gb/s, PRBS223-1 VM=-3.9V,VB=-5.0V,RL=15 ohms Conditions Ta=25 °C, VDD=GND, VSS=-5 V, DIN :VIL=-1.7V,VIH=-0.9V,DINB=-1.3V,@2.5 Gb/s, PRBS223-1 VM=-3.9V,VB=-5.0V,RL=15 ohms 2.7 Gb/s Laser Diode Driver F0522501Q (7)-(a) Optical Output Waveform @2.48832Gb/s (1310nm FP-LD) Conditions Ta=25 °C, VDD=GND, VSS=-5 V, @2.48832 Gb/s, PRBS223-1 VIN@DIN , DINB , CKIN , CKINB=0.8Vp-p (AC coupled) Conditions Ta=25 °C, VDD=GND, VSS=-5 V, @2.48832 Gb/s, PRBS223-1 VIN@DIN , DINB , CKIN , CKINB=0.8Vp-p (AC coupled) with fourth order Bessel-Thompson filter 2.7 Gb/s Laser Diode Driver F0522501Q (7)-(b) Optical Output Waveform @2.48832Gb/s (1310nm DFB-LD) Conditions Ta=25 °C, VDD=GND, VSS=-5 V, @2.48832 Gb/s, PRBS223-1 VIN@DIN , DINB , CKIN , CKINB=0.8 Vp-p (AC coupled) Conditions Ta=25 °C, VDD=GND, VSS=-5 V, @2.48832 Gb/s, PRBS223-1 VIN@DIN , DINB , CKIN , CKINB=0.8 Vp-p (AC coupled) with fourth order Bessel-Thompson filter F0522501Q 2.7 Gb/s Laser Diode Driver ♦ Test Circuit Pulse Pattern Generator F0522501Q Laser Diode*) Optical Sampling Waveform Oscillo -scope Fiber Monitor *) 1310nm DFB-LD:SLT4200Series (Sumitomo Electric Industries, LTD.) 1310nm FP-LD:SLT4100Series (Sumitomo Electric Industries, LTD.) ♦ Application Guide (1) Data and Clock Input Interface (a) Differential ECL (or PECL) Interface Buffer-IC DINB Data VDD-2V VTTD RIN DIN RIN 10k typ. Vref 10k typ. F0522501Q CKIN Clock VDD-2V VTTD RIN CKINB RIN 10k typ. Vref 10k typ. *) RIN=50 Ω typ., Vref=VDD-1.4 V typ. F0522501Q 2.7 Gb/s Laser Diode Driver (b) Differential AC Coupled Interface Buffer-IC 0.022µ D INB 0.022µ V TTD Data DIN RIN 10k typ. Vref RIN 10k typ. 0.022µ F0522501Q 100p CK IN Clock 100p V TTD RIN CKINB RIN 10k typ. Vref 10k typ. 100p *) RIN=50 Ω typ., Vref=VDD-1.4 V typ. (c) Single-Ended AC Coupled Interface 50 0.022µ DINB Buffer-IC 0.022µ V TTD DIN Data RIN 10k typ. Vref RIN 10k typ. 0.022µ F0522501Q Clock 100p CK IN 100p V TTD RIN CKINB RIN 10k typ. Vref 10k typ. 50 100p *) RIN=50 Ω typ., Vref=VDD-1.4 V typ. F0522501Q 2.7 Gb/s Laser Diode Driver (2) Disable Input and Selector Input Interface VDD CMOS-IC DISIN 8k typ. Disable 15k typ. 6.5k typ. VSS F0522501Q VDD SELIN 8k typ. Selector 15k typ. 6.5k typ. VSS (3) Current Output Interface VDD OUTB Laser Diode 15 typ. OUT F0522501Q or OUTBIAS 10 typ. 3k typ. or 3k typ. BMB BM F0522501Q 2.7 Gb/s Laser Diode Driver (4) Bias Current Monitor and Mark Density Monitor Interface MRK 25k typ. MRKB R2 R1 – R1 + Op. Amp R2 25k typ. F0522501Q Vref1 OUTBIAS R4 10 typ. BM 3k typ. 3k typ. BMB R3 – R3 + Op. Amp R4 *) Voltage of MRK and MRKB is VDD-1.8V typ. Vref2 @50% Mark Density. **) Value of R1 to R4 should be enough larger than 25Ω. Recommended value is 100k to 200kΩ. F0522501Q 2.7 Gb/s Laser Diode Driver (5) Timing Chart VIH CKIN VIL VIH DIN ts th VIL IMON Current @OUT IMOFF IMON Current @OUTB IMOFF F0522501Q 2.7 Gb/s Laser Diode Driver ♦ Package Drawings 9.0±0.3 0.5±0.2 0.7 typ. SUMITOMO ELECTRIC 0522501 #### 7.0±0.2 0.7 typ. 9.0±0.3 0.8 0.3±0.1 +0.1 0.15 -0.05 0.10±0.05 1.45±0.1 7.0±0.2 Dimension:millimeters F0522501Q 2.7 Gb/s Laser Diode Driver ♦ APC (Auto Power Control) Sample Circuit Vcc LD Module LD Monitor PIN-PD or R16 OUT F0522501Q C1 C2 R5 OUTBIAS VB R13 R1 C3 VM or R3 Op.Amp. R2 R4 Op.Amp. Op.Amp. R6 R11 R9 R12 R10 Vreg RT R7 R8 RT:thermister Electron Device Department VB