DATA SHEET
MOS INTEGRATED CIRCUIT
µPD16886
MONOLITHIC 1.5-CHANNEL H BRIDGE DRIVER CIRCUIT FOR CAMERAS
DESCRIPTION
The µPD16886 is a monolithic H bridge driver LSI that employs N-channel MOSFETs in its output stage.
This IC incorporates a 1.5-channel H bridge circuit and can control two motors that do not operate at the same
time. In addition, forward/reverse, brake, and stop functions are available, making this LSI ideal for driving motors
such as the motor for winding the camera film and the lens zoom motor.
FEATURES
{ Large output current
ID(DC) = 1.0 A
During continuous operation
ID(pulse) = 2.8 A
PW ≤ 20 ms, during single operation
ID(pulse) = 2.2 A
PW ≤ 200 ms, during single operation
{ On-chip 1.5-channel H bridge circuit
RON = 0.5 Ω max. Sum of the top and bottom on-resistance, total temperature range
{ Low on-resistance
{ On-chip standby circuit to set the charge pump circuit to OFF
{ Low-voltage operation is possible (operable at 2.7 V or higher)
{ On-chip undervoltage lockout circuit
{ Mounted in a small-scale package
24-pin plastic TSSOP
ORDERING INFORMATION
Part Number
Package
µPD16886MA-6A5
24-pin plastic TSSOP (5.72 mm (225))
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. S14844EJ2V0DS00 (2nd edition)
Date Published May 2002 N CP(K)
Printed in Japan
©
2002
µPD16886
ABSOLUTE MAXIMUM RATINGS
(TA = 25°°C: MOUNTED ON GLASS EPOXY BOARD 100 mm × 100 mm × 1 mm, COPPER FILM AREA: 15%)
Parameter
Supply voltage
Symbol
Conditions
Ratings
Unit
−0.5 to +6.0
V
When charge pump operating
−0.5 to +4.0
V
At VG external input
−0.5 to +6.0
VDD
VM
VG pin apply voltage
VG
Input voltage
VIN
Output current (DC)
ID(DC)
Output current (pulse)
At VG external input
8.0
V
−0.5 to VDD + 0.5
V
During successive operation
±1.0
A
ID(pulse)
PW < 20 ms, single pulse
±2.8
A
Output current (pulse)
ID(pulse)
PW < 200 ms, single pulse
±2.2
A
Power consumption
PT
0.7
W
Peak junction temperature
TJ(MAX)
150
°C
Storage temperature
Tstg
−55 to +150
°C
RECOMMENDED OPERATING CONDITIONS
(TA = 25°°C: MOUNTED ON GLASS EPOXY BOARD 100 mm × 100 mm × 1 mm, COPPER FILM AREA: 15%)
Parameter
MAX.
Unit
VDD
2.7
5.5
V
VM
1.6
3.6
V
VG pin apply voltage
VG
VM + 3.5
7.5
V
Output current (DC)
ID(DC)
During successive operation
0.8
A
Output current (pulse)
ID(pulse)
PW < 20 ms, single pulse
2.5
A
Output current (pulse)
ID(pulse)
PW < 200 ms, single pulse
2.0
A
Charge pump capacitor capacitance
C1 to C3
Operating ambient temperature
TA
Peak junction temperature
TJ(MAX)
Supply voltage
Symbol
Conditions
MIN.
TYP.
µF
0.01
−20
+75
°C
125
°C
ELECTRICAL SPECIFICATIONS (UNLESS OTHERWISE SPECIFIED, TA = 25°°C, VDD = VM = 3.0 V)
Parameter
MAX.
Unit
IDD
STB = VDD
2.0
mA
IDD(STB)
STB = GND
1.0
µA
VM pin current in off state
IMOFF
Control pin at low level
1.0
µA
Input voltage, high
VIH
VDD
V
Input voltage, low
VIL
0.8
V
Input pull-down resistor
RIND
Output on-resistance
RON
Low voltage detection voltage
VDDS
Charge pump circuit turn-on time
tONC
H bridge circuit turn-on time
tON
H bridge circuit turn-off time
tOFF
VDD pin current
Symbol
Conditions
TYP.
1.8
200
−20°C ≤ TA ≤ 75°C
ID = 0.8 A
C1 = C2 = C3 = 0.01 µF
0.35
0.8
C1 = C2 = C3 = 0.01 µF
ID = 0.8 A, see Figures 1 and 2
The output is high impedance during low-voltage detection.
The VG pin voltage when using the charge pump is VG .=. VM + 3.6 V.
2
MIN.
Data Sheet S14844EJ2V0DS
kΩ
0.5
Ω
2.5
V
1.0
ms
5.0
µs
5.0
µs
µPD16886
Figure 1. Charge Pump Characteristics Waveform
50%
STB
tONC
VM + 3.6 V (reference)
90%
VG
Figure 2. Switching Characteristics Waveform
50%
50%
IN
tON
IM
tOFF
50%
Data Sheet S14844EJ2V0DS
50%
3
µPD16886
BLOCK DIAGRAM
VDD
C1H
C1L
C2H
C2L
VG
Oscillator
Charge pump
circuit
VM
BGR
circuit
UVLO
STB
OUT1
MOS
H-bridge
circuit
IN1
IN2
Level shifter
Controller
IN3
LGND
PGND
PIN CONFIGURATION
Pin No.
4
Pin Name
VM
1
24
N.C.
C2L
2
23
PGND
C2H
3
22
OUT3
C1L
4
21
N.C.
C1H
5
20
VM
VG
6
19
N.C.
LGND
7
18
OUT2
STB
8
17
PGND
IN1
9
16
OUT1
IN2
10
15
VM
IN3
11
14
N.C.
VDD
12
13
N.C.
Pin Function
Pin No.
Pin Name
Pin Function
1
VM
Motor block supply voltage pin
13
N.C.
Unused pin
2
C2L
Charge pump capacitor connection pin
14
N.C.
Unused pin
3
C2H
Charge pump capacitor connection pin
15
VM
Motor block supply voltage pin
4
C1L
Charge pump capacitor connection pin
16
OUT1
H bridge output pin
5
C1H
Charge pump capacitor connection pin
17
PGND
Output block GND pin
6
VG
Gate voltage input pin
18
OUT2
H bridge output pin
7
LGND
Control block GND pin
19
N.C.
Unused pin
8
STB
Standby pin
20
VM
Motor block supply voltage pin
9
IN1
Input pin
21
N.C.
Unused pin
10
IN2
Input pin
22
OUT3
H bridge output pin
11
IN3
Input pin
23
PGND
Output block GND pin
12
VDD
Control block supply voltage pin
24
N.C.
Unused pin
Data Sheet S14844EJ2V0DS
OUT2
OUT3
µPD16886
FUNCTION TABLE (OUTPUT BLOCK CONNECTION)
VM
SW1
SW3
LOAD1
OUT1
SW5
LOAD2
OUT2
OUT3
Forward
Forward
SW2
SW4
SW6
GND
(Truth Table)
Input Signal
Circuit Operation
Current Route
IN1
IN2
IN3
STB
L
H
L
H
1 ch forward
VM → OUT1 → LOAD1 → OUT2 → GND
L
L
H
H
1 ch reverse
VM → OUT2 → LOAD1 → OUT1 → GND
L
H
H
H
1 ch brake
Only SW2 and SW4 are on
H
H
L
H
2 ch forward
VM → OUT2 → LOAD2 → OUT3 → GND
H
L
H
H
2 ch reverse
VM → OUT3 → LOAD2 → OUT2 → GND
H
H
H
H
2 ch brake
Only SW4 and SW6 are on
−
L
L
H
Stopped
SW1 to SW6 are all off
−
−
−
L
Standby
Charge pump circuit stopped
Unused switches (example: SW1 and SW2 at 2 ch driving) are high impedance.
CHARACTERISTICS CURVES
PT vs. TA characteristics
Total power dissipation PT (W)
1.0
0.8
0.7 W
178˚C/W
0.6
0.4
0.2
0
–10 0
20
40
60
80
100
120
Operating ambient temperature TA (˚C)
Data Sheet S14844EJ2V0DS
5
µPD16886
CHARACTERISTICS CURVES
IDD vs. VDD characteristics
IDD vs. TA characteristics
5
5
VDD = 3 V
4
VDD pin current IDD (mA)
VDD pin current IDD (mA)
TA = 25˚C
3
When operating
2
1
4
3
2
1
When operating
During standby
0
2
4
0
–40
6
Supply voltage VDD (V)
During standby
–20
0
20
40
60
RON vs. VM characteristics
RON vs. TA characteristics
0.5
VM = 3 V
Output on-resistance RON (Ω)
Output on-resistance RON (Ω)
TA = 25˚C
0.45
0.4
0.35
0.3
0.25
0
1
2
3
0.45
0.4
0.35
0.3
0.25
–40
4
Motor supply voltage VM (V)
–20
RIND vs. TA characteristics
Detection voltage at low voltage VDDS (V)
300
200
100
–20
0
20
40
60
20
40
60
80
100
VDDS vs. TA characteristics
VDD = 3 V
0
–40
0
Operating ambient temperature TA (˚C)
400
Input pull-down resistance RIND (kΩ)
100
Operating ambient temperature TA (˚C)
0.5
80
100
4
VDD = 3 V
3
2
1
0
–40
Operating ambient temperature TA (˚C)
6
80
Data Sheet S14844EJ2V0DS
–20
0
20
40
60
80
Operating ambient temperature TA (˚C)
100
µPD16886
CHARACTERISTICS CURVES
VIH, VIL vs. VDD characteristics
VIH, VIL vs. TA characteristics
3
High/low-level input voltage VIH, VIL (V)
High/low-level input voltage VIH, VIL (V)
3
TA = 25˚C
VIH
2
VIL
1
0
2
4
VDD = 3 V
2.5
2
VIL
1
0.5
0
–40
6
VIH
1.5
Supply voltage VDD (V)
–20
TA = 25˚C
4
3
2
tON
1
tOFF
2
3
4
4
3
2
Charge pump circuit turn-on time tONC (ms)
Charge pump circuit turn-on time tONC (ms)
0.8
0.6
0.4
0.2
40
60
tON
1
tOFF
0
–40
–20
0
20
40
60
80
100
TONC vs. VM characteristics
VDD = 3 V
20
100
VM = 3 V
tONC vs. TA characteristics
0
80
Operating ambient temperature TA (˚C)
1
–20
60
5
Motor supply voltage VM (V)
0
–40
40
tON, tOFF vs. TA characteristics
H bridge circuit turn-on/off time tON, tOFF (µs)
H bridge circuit turn-on/off time tON, tOFF (µs)
tON, tOFF vs. VM characteristics
1
20
Operating ambient temperature TA (˚C)
5
0
0
80
100
1
TA = 25˚C
0.8
0.6
0.4
0.2
0
Operating ambient temperature TA (˚C)
Data Sheet S14844EJ2V0DS
1
2
3
4
Motor supply voltage VM (V)
7
8
Control
LSI
Data Sheet S14844EJ2V0DS
IN3
IN2
IN1
STB
VDD
BGR
circuit
UVLO
Controller
Oscillator
10 µ F
2.7 V to 5.5 V
C1H
C2H
LGND
Level shifter
C2L
0.01 µF
Charge pump
circuit
C1L
0.01 µ F
VG
PGND
MOS
H-bridge
circuit
OUT3
OUT2
OUT1
10 µ F
VM
M2
M1
Battery
1.6 V to 3.6 V
Remarks 1. To reduce the noise, inserting a tantalum capacitor
of about 10 µ s in the power supply line is recommended.
2. To prevent the noise wraparound, connecting LGND
and PGND separately (one point grounding) is
recommended.
0.01 µF
DC/DC
converter
µPD16886
(1) When charge pump used
EXAMPLE OF STANDARD CONNECTION
Control
LSI
Data Sheet S14844EJ2V0DS
IN3
IN2
IN1
STB
VDD
BGR
circuit
UVLO
Controller
Oscillator
10 µ F
2.7 V to 5.5 V
C1H
C2H
C2L
LGND
Level shifter
Charge pump
circuit
C1L
VG
OUT3
OUT2
OUT1
10 µ F
VM
M2
M1
Battery
1.6 V to 3.6 V
Remarks 1. To reduce the noise, inserting a tantalum capacitor
of about 10 µ s in the power supply line is recommended.
2. To prevent the noise wraparound, connecting LGND
and PGND separately (one point grounding) is
recommended.
PGND
MOS
H-bridge
circuit
VM + 3.5 V to 7.5 V
DC/DC
converter
µPD16886
(2) When VG is externally input
9
µPD16886
PACKAGE DRAWING
24-PIN PLASTIC TSSOP (5.72 mm (225))
13
24
detail of lead end
F
G
R
P
L
S
12
1
E
A
H
A'
I
J
S
D
M
N
K
C
M
S
B
NOTE
Each lead centerline is located within 0.10 mm of
its true position (T.P.) at maximum material condition.
ITEM
MILLIMETERS
A
6.65±0.10
A'
6.5±0.1
B
0.575
C
0.5 (T.P.)
D
E
0.22±0.05
0.1±0.05
F
1.2 MAX.
G
1.0±0.05
H
I
J
K
L
M
6.4±0.1
4.4±0.1
1.0±0.1
0.145±0.025
0.5
0.10
N
0.08
P
3°+5°
−3°
R
0.25
S
0.6±0.15
S24MA-50-6A5
10
Data Sheet S14844EJ2V0DS
µPD16886
RECOMMENDED SOLDERING CONDITIONS
The µPD16886 should be soldered and mounted under the following recommended conditions.
For details of the recommended soldering conditions, refer to the document Semiconductor Device Mounting
Technology Manual (C10535E). For soldering methods and conditions other than those recommended below,
contact an NEC sales representative.
Surface Mounting Type Soldering Conditions
Soldering Method
Soldering Conditions
Recommended
Condition Symbol
Infrared reflow
Package peak temperature: 235°C, Time: 30 seconds max. (at 210°C or higher),
Count: Three times or less, Exposure limit: None, Flux: Rosin-based flux with low
chlorine content (chlorine 0.2Wt% or below) is recommended
IR35-00-3
VPS
Package peak temperature: 215°C, Time: 40 seconds max. (at 200°C or higher), Count:
Three times or less, Exposure limit: None, Flux: Rosin-based flux with low chlorine
content (chlorine 0.2Wt% or below) is recommended
VP15-00-3
Wave soldering
Package peak temperature: 260°C, Time: 10 seconds max., Preheating temperature:
120°C or lower, Count: Once, Flux: Rosin-based flux with low chlorine content (chlorine
0.2Wt% or below) is recommended
WS60-00-1
Note
Do not use different soldering methods together.
Data Sheet S14844EJ2V0DS
11
µPD16886
[MEMO]
12
Data Sheet S14844EJ2V0DS
µPD16886
[MEMO]
Data Sheet S14844EJ2V0DS
13
µPD16886
[MEMO]
14
Data Sheet S14844EJ2V0DS
µPD16886
NOTES FOR CMOS DEVICES
1
PRECAUTION AGAINST ESD FOR SEMICONDUCTORS
Note:
Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static electricity
as much as possible, and quickly dissipate it once, when it has occurred. Environmental control
must be adequate. When it is dry, humidifier should be used. It is recommended to avoid using
insulators that easily build static electricity. Semiconductor devices must be stored and transported
in an anti-static container, static shielding bag or conductive material. All test and measurement
tools including work bench and floor should be grounded. The operator should be grounded using
wrist strap. Semiconductor devices must not be touched with bare hands. Similar precautions need
to be taken for PW boards with semiconductor devices on it.
2
HANDLING OF UNUSED INPUT PINS FOR CMOS
Note:
No connection for CMOS device inputs can be cause of malfunction. If no connection is provided
to the input pins, it is possible that an internal input level may be generated due to noise, etc., hence
causing malfunction. CMOS devices behave differently than Bipolar or NMOS devices. Input levels
of CMOS devices must be fixed high or low by using a pull-up or pull-down circuitry. Each unused
pin should be connected to V DD or GND with a resistor, if it is considered to have a possibility of
being an output pin. All handling related to the unused pins must be judged device by device and
related specifications governing the devices.
3
STATUS BEFORE INITIALIZATION OF MOS DEVICES
Note:
Power-on does not necessarily define initial status of MOS device. Production process of MOS
does not define the initial operation status of the device. Immediately after the power source is
turned ON, the devices with reset function have not yet been initialized. Hence, power-on does
not guarantee out-pin levels, I/O settings or contents of registers. Device is not initialized until the
reset signal is received. Reset operation must be executed immediately after power-on for devices
having reset function.
Data Sheet S14844EJ2V0DS
15
µPD16886
• The information in this document is current as of April, 2002. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
• NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
• Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
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responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
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agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
• NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
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and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
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systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
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"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4