IS357A HIGH DENSITY MOUNTING PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS DESCRIPTION The IS357A is an optically coupled isolator consisting of an infrared light emitting diode and NPN silicon photo transistor in a space efficient dual in line plastic package. FEATURES l Current Transfer Ratio 80 - 160 % l Isolation Voltage (3.75kVRMS ,5.3kVPK ) l All electrical parameters 100% tested l Custom electrical selections available l Drop in replacement for Sharp PC357A APPLICATIONS l Computer terminals l Industrial systems controllers l Measuring instruments l Signal transmission between systems of different potentials and impedances ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1YD Tel: (01429) 863609 Fax :(01429) 863581 04/10/00 ISOCOM INC 1024 S. Greenville Ave, Suite 240, Allen, TX 75002 USA Tel: (214) 495-0755 Fax: (214) 495-0901 e-mail [email protected] http://www.isocom.com DB92851-AAS/A1 ABSOLUTE MAXIMUM RATINGS (25°C unless otherwise specified) Storage Temperature -40°C to + 125°C Operating Temperature -30°C to + 100°C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260°C INPUT DIODE Forward Current Reverse Voltage Power Dissipation 50mA 6V 70mW OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Emitter-collector Voltage BVECO Power Dissipation 35V 6V 150mW POWER DISSIPATION Total Power Dissipation 170mW (derate linearly 2.26mW/°C above 25°C) ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted ) PARAMETER Input Output Coupled MIN TYP MAX UNITS Forward Voltage (VF) Reverse Voltage (VR) Reverse Current (IR) 5 1.2 Collector-emitter Breakdown (BVCEO) 35 Emitter-collector Breakdown (BVECO) Collector-emitter Dark Current (ICEO) 6 Current Transfer Ratio (CTR) 80 04/10/00 IF = 20mA IR = 10µA VR = 4V V IC = 0.5mA 100 V nA IE = 0.1mA VCE = 20V 160 % 5mA IF , 5V VCE 0.2 V 20mA IF , 1.0mA IC VRMS VPK See note 1 See note 1 Ω µs µs VIO = 500V (note 1) VCE = 2V , IC = 2mA, RL = 100Ω 3750 5300 Input-output Isolation Resistance RISO 5x1010 Output Rise Time tr Output Fall Time tf Note 1 Note 2 V V µA 10 Collector-emitter Saturation VoltageVCE (SAT) Input to Output Isolation Voltage VISO 1.4 4 3 TEST CONDITION 18 18 Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory. DB92851-AAS/A1 CHARACTERISTIC CURVES Fig.1 Forword Current vs. Ambient Temperatute Fig.2 Collector Power Dissiption vs. Ambient Temperature 200 Collector Power dissipation Pc (mW) 60 Forward current I (mA) F 50 40 30 20 10 0 -30 0 25 50 75 100 125 150 100 50 0 -30 o 7mA 5mA 1mA 3mA 100 125 o Ta= 75 C 50 C o 200 4 3 2 o 25 C 0C -25 C o 100 o 50 20 10 5 1 2 1 0 5 15 10 1.0 0.5 0 Forward current I F (mA) 1.5 2.0 2.5 3.0 Forward voltage V F (V) Fig.5 Current Transfer Ratio vs. Forward Current Fig.6 Collector Current vs. Collector-emitter Voltage 200 50 VCE = 5V 180 IF = 30mA o o 160 140 120 100 80 60 40 Ta= 25 C 25mA Ta= 25 C Collector current Ic (mA) Current transfer ratio CTR (%) 75 500 O Ta= 25 C 0 40 20mA 30 15mA Pc(MAX.) 20 10mA 10 5mA 20 0 0 1 2 5 10 20 Forward current I F (mA) 30/03/01 50 Fig.4 Forward Current vs. Forward Voltage Forward current I (mA) F Ic=0.5mA Collecotr-emitter saturation voltage VCE (sat) (V) 5 25 Ambient temperature Ta ( C) Fig.3 Collector-emitter Saturation Voltage vs. Forward Current 6 0 o Ambient temperature Ta ( C) 50 0 1 2 3 4 5 6 7 8 9 Collector-em itter voltage V CE (V) Appendix to Mini Flat Pack CHARACTERISTIC CURVES Fig.7 Relative Current Transfer Ratio vs. Ambient Temperature Fig.8 Collector-emitter Saturation Voltage vs. Ambient Temperature 0.10 150 I F = 20mA VCE = 5V 100 50 Collector-emitter saturation voltage VCE (sat) (V) Relative current transfer ratio (%) I F = 5mA Ic= 1mA 0.08 0.06 0.04 0.02 0 0 20 40 60 80 100 20 40 o 100 Fig.10 Response Time vs. Load Resistance 500 VCE = 20V 200 VCE = 2V Ic= 2mA Ta= 25 C o 100 Response time ( s) 1000 Collector dark current I (nA) CEO 80 Ambient temperature Ta ( C) Fig.9 Collector Dark Current vs. Ambient Temperature 10000 60 o Ambient temperature Ta ( C) 100 10 50 tr 20 tf 10 td 5 ts 2 1 0.5 1 20 40 60 80 0.2 0.05 100 o 0.1 0.2 Fig.11 Frequency Response 1 2 5 10 Test Circuit for Response Time Vcc VCE = 2V Ic= 2mA Ta= 25 C o 0 Voltage gain Av (dB) 0.5 Load resistance R L (k ) Ambient temperature Ta ( C) Input Output Input RD RL 10% Output 90% ts td tr 10 R L= 10k 1k tf 100 Test Circuit for Frequency Response Vcc 20 RD 0.5 1 2 5 10 20 50 100 RL Output 500 Frequency f (kHz) 30/03/01 Appendix to Mini Flat Pack TEMPERATURE PROFILE OF SOLDERING REFLOW (1) One time soldering reflow is recommended within the condition of temperature and time profile shown below. (2) When using another soldering method such as infrated ray lamp, the temperature may rise partially in the mold of the device. Keep the temperature on the package of the device within the condition of above (1). 30/03/01 Appendix to Mini Flat Pack TAPING DIMENSIONS Description Tape wide Pitch of sprocket holes Distance of compartment Distance of compartment to compartment 30/03/01 Symbol W P0 F P2 P1 Dimensions in mm ( inches ) 12 ± 0.3 ( .47 ) 4 ± 0.1 ( .15 ) 5.5 ± 0.1 ( .217 ) 2 ± 0.1 ( .079 ) 8 ± 0.1 ( .315 ) Appendix to Mini Flat Pack