TIL113 OPTICALLY COUPLED ISOLATOR PHOTODARLINGTON OUTPUT UL recognised, File No. E91231 l Dimensions in mm 2.54 APPROVALS 6.4 6.2 'X' SPECIFICATION APPROVALS l VDE 0884 pending 1 2 6 5 3 4 1.54 8.8 8.4 4.3 4.1 0.5 DESCRIPTION The TIL113 is an optically coupled isolator consisting of an infrared light emitting diode and NPN silicon photodarlington in a space efficient dual in line plastic package. FEATURES l Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. l High Current Transfer Ratio l High Isolation Voltage (5.3kVRMS ,7.5kVPK ) l All electrical parameters 100% tested l Custom electrical selections available APPLICATIONS Computer terminals l Industrial systems controllers l Measuring instruments l Signal transmission between systems of different potentials and impedances 0.5 7.8 7.4 0.3 3.3 9.6 8.4 ABSOLUTE MAXIMUM RATINGS (25°C unless otherwise specified) Storage Temperature -55°C to + 150°C Operating Temperature -55°C to + 100°C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260°C INPUT DIODE Forward Current Reverse Voltage Power Dissipation 80mA 5V 105mW l OPTION G OPTION SM SURFACE MOUNT OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Collector-base Voltage BVCBO Emitter-collector Voltage BVECO Power Dissipation 30V 30V 7V 150mW POWER DISSIPATION 5.08 max. 1.2 0.6 10.2 9.5 1.4 0.9 Total Power Dissipation 250mW (derate linearly 3.3mW/°C above 25°C) 0.26 10.16 ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, TS25 1YD England Tel: (01429)863609 Fax : (01429) 863581 e-mail [email protected] http://www.isocom.com 19/4/99 DB91047-AAS/A1 ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted ) Input Output Coupled PARAMETER MIN TYP MAX UNITS Forward Voltage (VF) Reverse Voltage (VR) Reverse Current (IR) 3 1.2 Collector-emitter Breakdown (BVCEO) Collector-base Breakdown (BVCBO) Emitter-collector Breakdown (BVECO) Collector-emitter Dark Current (ICEO) 1.5 10 V V µA IF = 10mA IR = 10µA VR = 3V 100 V V V nA IC = 1mA (note 2) IC = 100µA IE = 100µA VCE = 10V mA 10mA IF , 1V VCE V 50mA IF , 50mA IC VRMS VPK (note 1) (note 1) Ω VIO = 500V (note 1) µs µs VCC= 15V, IC = 10mA, RL = 100Ω , fig.1 30 30 7 Collector Output Current ( IC ) (Note 2) 30 Collector-emitter Saturation VoltageVCE(SAT) Input to Output Isolation Voltage VISO 1.2 5300 7500 Input-output Isolation Resistance RISO 5x1010 Output Rise Time Output Fall Time Note 1 Note 2 tr tf 60 53 TEST CONDITION 300 250 Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory. FIGURE 1 VCC = 15V Input 100Ω ton toff IC = 10mA tr Input 19/4/99 Output tf Output 10% 10% 90% 90% DB91047-AAS/A1 Collector Power Dissipation vs. Ambient Temperature Current Transfer Ratio vs. Forward Current 10000 5000 Current transfer ratio CTR (%) Collector power dissipation P C (mW) 200 150 100 50 0 1000 800 500 100 50 VCE = 1V TA = 25°C 10 0 -30 0 25 50 75 100 0.1 0.2 0.5 125 Forward Current vs. Ambient Temperature TA = 25°C 20 Collector current I C (mA) 80 Forward current I F (mA) 10 20 50 100 50mA 100 60 40 20 0 10mA 5mA 80 60 40 2mA 20 IF = 1mA 0 -30 0 25 50 75 100 125 0 Ambient temperature TA ( °C ) Relative current transfer ratio 1.5 1.0 IF = 50mA IC = 50mA 0.6 2 3 4 5 Relative Current Transfer Ratio vs. Ambient Temperature 1.2 0.8 1 Collector-emitter voltage VCE ( V ) Collector-emitter Saturation Voltage vs. Ambient Temperature (V) CE(SAT) 5 Collector Current vs. Collector-emitter Voltage 100 Collector-emitter saturation voltage V 2 Forward current IF (mA) Ambient temperature TA ( °C ) 0.4 0.2 0 IF = 10mA VCE = 1V 1.0 0.5 0 -30 0 25 50 75 Ambient temperature TA ( °C ) 19/4/99 1 100 -30 0 25 50 75 Ambient temperature TA ( °C ) 100 DB91047-AAS/A1