ISTS100 ISTS200 1mm APERTURE OPTO-ELECTRONIC SINGLE CHANNEL SLOTTED INTERRUPTER SWITCHES WITH TRANSISTOR SENSORS 1 25.7 24.1 19.05 E 2 12.7 1 2 6.6 3 2.8 11.1 10.5 3.3 3.0 2.8 9.0 8.0 11.1 10.5 OPTICAL CENTRE LINE 0.45 0.40 2.54 7.62 2.54 1 4 2 3 DESCRIPTION The ISTS100, ISTS200 opaque photointerrupters are single channel switches consisting of a Gallium Arsenide infrared emitting diode and a NPN silicon photo transistor mounted in a polycarbonate housing. The package is designed to optimise the mechanical resolution, coupling efficiency, ambient light rejection, cost and reliability. Operating on the principle that objects opaque to infrared will interrupt the transmission of light between an infrared emitting diode and a photo sensor switching the output from an "ON" state to an "OFF" state. FEATURES l High Gain l 3mm Gap between LED and Detector l Polycarbonate case protected against ambient light APPLICATIONS l Copiers, Printers, Facsimilies, Record Players, Casette Decks, Optoelectronic Switches ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1YD Tel: (01429) 863609 Fax :(01429) 863581 24/9/97 6.6 3.0 3.3 3.0 OPTICAL CENTRE LINE 0.45 0.40 7.62 4 3 E 12.7 3.3 3.0 3.0 9.0 8.0 ISTS200 Dimensions in mm 3.3 DIA 2 PLCS 4 ISTS100 ABSOLUTE MAXIMUM RATINGS (25°C unless otherwise specified) Storage Temperature -40°C to + 85°C Operating Temperature -25°C to + 85°C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260°C INPUT DIODE Forward Current Reverse Voltage Power Dissipation 50mA 5V 75mW OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Emitter-collector Voltage BVECO Collector Current IC Power Dissipation 30V 5V 20mA 75mW ISOCOM INC 720 E., Park Boulevard, Suite 104, Plano, TX 75074 USA Tel: (972) 423-5521 Fax: (972) 422-4549 DB92182-AAS/A2 ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted ) Input Output PARAMETER MIN TYP MAX UNITS Forward Voltage (VF) Reverse Voltage (VR) Reverse Current (IR) 5 1.2 100 V IC = 1mA Emitter-collector Breakdown (BVECO) 5 V IE = 100µA nA VCE = 10V mA 30mA IF , 5V VCE V 30mA IF , 1.8mA IC µs µs VCC = 5V , IF = 30mA,RL= 2.5kΩ On-State Collector Current IC ( ON ) ( Note 1 ) Turn-on Time Turn-off Time 24/9/97 IF = 50mA IR = 100µA VR = 5V 30 100 1.9 0.4 Collector-emitter Saturation VoltageVCE(SAT) Note 1 V V µA Collector-emitter Breakdown (BVCEO) ( Note 1 ) Collector-emitter Dark Current (ICEO) Coupled 1.7 TEST CONDITION ton toff 8 50 Special Selections are available on request. Please consult the factory. DB92182-AAS/A2 Collector Power Dissipation vs. Ambient Temperature Normalized Output Current vs. Collector-emitter Voltage 10 Normalized output current Collector power dissipation PC (mW) 100 75 50 25 0 -25 0 25 50 75 100 4 2 IF = 50mA 1 0.4 0.2 0.1 0.04 0.02 0.01 TA = 25°C 0.1 125 1 10 100 Collector-emitter voltage VCE ( V ) Ambient temperature TA ( °C ) Forward Current vs. Ambient Temperature Normalized Output Current vs. Forward Current 2.0 60 Normalized to IF = 30mA VCE = 0.4V Pulsed PW = 100µs PRR = 100pps 1.8 Normalized output current 50 Forward current IF (mA) 30mA 20mA 10mA 5mA Normalized to IF = 30mA VCE = 5V Pulsed PW = 100µs PRR = 100pps 40 30 20 10 1.6 1.4 1.2 T A = 25°C 1.0 0.8 0.6 0.4 0.2 0 0 0 25 75 100 125 5 10 20 Normalized Output Current vs. Ambient Temperature Collector-emitter Saturation Voltage vs. Ambient Temperature 1.0 0.5 0 0 25 50 75 Ambient temperature TA ( °C ) 24/9/97 2 Forward current IF (mA) IF = 30mA VCE = 5V -25 1 Ambient temperature TA ( °C ) 1.5 Normalized output current 50 100 Collector-emitter saturation voltage VCE(SAT) (V) -25 50 0.28 0.24 IF = 30mA IC = 1.8mA 0.20 0.16 0.12 0.08 0.04 0 -25 0 25 50 75 100 Ambient temperature TA ( °C ) DB92182-AAS/A2