ISTS149, ISTS703A, ISTS708 REFLECTIVE OPTICAL SWITCHES ISTS708 DESCRIPTION The ISTS149, ISTS703A, ISTS708 each consist 5.1 of an infrared emitting diode and a NPN silicon photo transistor mounted side by side on point of converging axes in a polycarbonate housing. The optimum response package is designed to optimise the mechanical resolution, coupling efficiency, ambient light rejection, cost and reliability.The phototransistor responds to radiation from the emitter only when 3.3 3.0 a reflective object passes within its field of view FEATURES l Phototransistor output l Opaque housing provides improved visible light rejection l Three available package types l Adjustable side-mounting provision l Also available with flying leads, with or without connector, supplied as required 4.1 3.5 1 4 15.5 15.0 0.5 sq. 2.54 12.3 9.5 1 5.1 2 3 4 17.8 3.18 nom. 2.54 2.3 4.6 8.9 0.5 sq. 2.54 3.8 ISTS703A 9.15 4 5.1 4 1 3 17.8 5.1 ISTS149 2 3.18 nom. point of optimum response APPLICATIONS l Copiers, Printers, Facsimilies, Record Players, Casette Decks, Optoelectronic Switches, VCR's, Dimensions in mm 9.7 3 2 1 17.0 point of optimum response 4.45 nom. 1.70 1.45 8.0 15.0 5.5 0.5 sq. 3 2 2.54 ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1YD Tel: (01429) 863609 Fax :(01429) 863581 24/9/97 22.8 3.3 3.0 ISOCOM INC 720 E., Park Boulevard, Suite 104, Plano, TX 75074 USA Tel: (972) 423-5521 Fax: (972) 422-4549 DB92074-AAS/A1 ABSOLUTE MAXIMUM RATINGS (25°C unless otherwise specified) Storage Temperature -40°C to + 85°C Operating Temperature -25°C to + 85°C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260°C INPUT DIODE Forward Current Reverse Voltage Power Dissipation 60mA 3V 90mW OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Emitter-collector Voltage BVECO Collector Current IC Power Dissipation 30V 5V 20mA 50mW ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted ) Input Output PARAMETER MIN TYP MAX UNITS Forward Voltage (VF) Reverse Voltage (VR) Reverse Current (IR) 3 1.6 100 V V µA IF = 40mA IR = 100µA VR = 3V Collector-emitter Breakdown (BVCEO) ( Note 1 ) 30 V IC = 1mA Emitter-collector Breakdown (BVECO) 5 V IE = 100µA nA VCE = 15V 40mA IF , 5V VCE D(mm) = 3.8mm 40mA IF , 5V VCE D(mm) = 3.8mm 40mA IF , 5V VCE D(mm) = 3.8mm Collector-emitter Dark Current (ICEO) Coupled TEST CONDITION 100 On-State Collector Current I C ( ON ) ( Note 1 ) ISTS149 25 µA ISTS703A 200 µA ISTS708 10 µA Collector-emitter Saturation VoltageVCE(SAT) Note 1 24/9/97 ISTS149 0.4 V ISTS703A 0.4 V ISTS708 0.4 V 40mA IF , 3µA IC D(mm) = 3.8mm 40mA IF , 100µA IC D(mm) = 3.8mm 40mA IF , 3µA IC D(mm) = 3.8mm Special Selections are available on request. Please consult the factory. DB92074-AAS/A1 Normalized Output Current vs. Collector-emitter Voltage 60 10 50 4 2 Normalized output current Collector power dissipation PC (mW) Collector Power Dissipation vs. Ambient Temperature 40 30 20 10 0 0 25 50 75 100 10mA Normalized to IF = 40mA VCE = 5V Pulsed PW = 100µs PRR = 100pps 0.2 0.1 0.04 0.02 0.01 TA = 25°C 1 10 100 Ambient temperature TA ( °C ) Collector-emitter voltage VCE ( V ) Forward Current vs. Ambient Temperature Normalized Output Current vs. Forward Current 80 2.0 70 1.8 60 50 40 30 20 Normalized to IF = 40mA VCE = 0.4V Pulsed PW = 100µs PRR = 100pps 1.6 1.4 1.2 TA = 25°C 1.0 0.8 0.6 0.4 0.2 0 0 0 25 50 75 100 Ambient temperature TA ( °C ) IF = 40mA VCE = 5V 1.0 0.5 0 -25 0 25 50 75 Ambient temperature TA ( °C ) 2 5 10 20 50 Forward current IF (mA) Normalized Output Current vs. Ambient Temperature 1.5 1 125 100 Collector-emitter saturation voltage VCE(SAT) (V) -25 Normalized output current 20mA 0.4 0.1 10 24/9/97 40mA 1 125 Normalized output current Forward current IF (mA) -25 IF = 60mA Collector-emitter Saturation Voltage vs. Ambient Temperature 0.28 0.24 IF = 40mA IC = 100µA 0.20 0.16 0.12 0.08 0.04 0 -25 0 25 50 75 100 Ambient temperature TA ( °C ) DB92074-AAS/A1