TECHNICAL DATA IW4011B Quad 2-Input NAND Gate High-Voltage Silicon-Gate CMOS The IW4011B NAND gates provide the system designer with direct emplementation of the NAND function. • Operating Voltage Range: 3.0 to 18 V • Maximum input current of 1 µA at 18 V over full packagetemperature range; 100 nA at 18 V and 25°C • Noise margin (over full package temperature range): 1.0 V min @ 5.0 V supply 2.0 V min @ 10.0 V supply 2.5 V min @ 15.0 V supply ORDERING INFORMATION IW4011BN Plastic IW4011BD SOIC TA = -55° to 125° C for all packages LOGIC DIAGRAM PIN ASSIGNMENT FUNCTION TABLE Inputs PIN 14 =VCC PIN 7 = GND Output A B Y L L H L H H H L H H H L 11 IW4011B MAXIMUM RATINGS* Symbol Parameter Value Unit -0.5 to +20 V VCC DC Supply Voltage (Referenced to GND) VIN DC Input Voltage (Referenced to GND) -0.5 to VCC +0.5 V DC Output Voltage (Referenced to GND) -0.5 to VCC +0.5 V VOUT IIN DC Input Current, per Pin ±10 mA PD Power Dissipation in Still Air, Plastic DIP+ SOIC Package+ 750 500 mW PD Power Dissipation per Output Transistor 100 mW -65 to +150 °C 260 °C Tstg TL Storage Temperature Lead Temperature, 1 mm from Case for 10 Seconds (Plastic DIP or SOIC Package) * Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the Recommended Operating Conditions. +Derating - Plastic DIP: - 10 mW/°C from 65° to 125°C SOIC Package: : - 7 mW/°C from 65° to 125°C RECOMMENDED OPERATING CONDITIONS Symbol VCC VIN, VOUT TA Parameter DC Supply Voltage (Referenced to GND) DC Input Voltage, Output Voltage (Referenced to GND) Operating Temperature, All Package Types Min Max Unit 3.0 18 V 0 VCC V -55 +125 °C This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high-impedance circuit. For proper operation, VIN and VOUT should be constrained to the range GND≤(VIN or VOUT)≤VCC. Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused outputs must be left open. 12 IW4011B DC ELECTRICAL CHARACTERISTICS(Voltages Referenced to GND) VCC Guaranteed Limit V ≥-55°C 25°C ≤125 °C Unit 5.0 10 15 3.5 7 11 3.5 7 11 3.5 7 11 V Maximum Low -Level VOUT= VCC - 0.5V Input Voltage VOUT= VCC - 1.0 V VOUT= VCC - 1.5V 5.0 10 15 1.5 3 4 1.5 3 4 1.5 3 4 V VOH Minimum High-Level Output Voltage VIN=GND or VCC 5.0 10 15 4.95 9.95 14.95 4.95 9.95 14.95 4.95 9.95 14.95 V VOL Maximum Low-Level Output Voltage VIN= VCC 5.0 10 15 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 V IIN Maximum Input Leakage Current VIN= GND or VCC 18 ±0.1 ±0.1 ±1.0 µA ICC Maximum Quiescent Supply Current (per Package) VIN= GND or VCC 5.0 10 15 20 0.25 0.5 1.0 5.0 0.25 0.5 1.0 5.0 7.5 15 30 150 µA IOL Minimum Output Low VIN= GND or VCC (Sink) Current UOL=0.4 V UOL=0.5 V UOL=1.5 V 5.0 10 15 0.64 1.6 4.2 0.51 1.3 3.4 0.36 0.9 2.4 Minimum Output VIN= GND or VCC High (Source) Current UOH=2.5 V UOH=4.6 V UOH=9.5 V UOH=13.5 V 5.0 5.0 10 15 -2.0 -0.64 -1.6 -4.2 -1.6 -0.51 -1.3 -3.4 -1.15 -0.36 -0.9 -2.4 Symbol Parameter VIH Minimum High-Level Input Voltage VIL IOH Test Conditions VOUT=0.5 V or VCC - 0.5 V VOUT=1.0 V or VCC - 1.0 V VOUT=1.5 V or VCC - 1.5 V mA mA 13 IW4011B AC ELECTRICAL CHARACTERISTICS(CL=50pF, RL=200kΩ, Input tr=tf=20 ns) Guaranteed Limit VCC Symbol Parameter V ≥-55°C 25°C ≤125°C Unit tPLH, tPHL Maximum Propagation Delay, Input A or B to Output Y (Figure 1) 5.0 10 15 250 120 90 250 120 90 500 240 180 ns tTLH, tTHL Maximum Output Transition Time, Any Output (Figure 1) 5.0 10 15 200 100 80 200 100 80 400 200 160 ns CIN Maximum Input Capacitance - Figure 1. Switching Waveforms EXPANDED LOGIC DIAGRAM (1/4 of the Device) 14 7.5 pF