SBA-5089 Product Description DC-5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ SBA-5089 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5 GHz with excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only a single positive supply voltage, DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation. Product Features • IP3 = 34.0dBm @ 1950MHz Gain & Return Loss • Pout=13.0 dBm @-45dBc ACP IS-95 1950MHz • Robust 1000V ESD, Class 1C 30 20 S21 • Operates From Single Supply • Patented Thermal Design 10 0 S22 -10 Applications -20 • PA Driver Amplifier • Cellular, PCS, GSM, UMTS S11 -30 -40 0 1 2 3 4 5 • IF Amplifier • Wireless Data, Satellite Terminals 6 Frequency (GHz) Symbol G Parameter Small Si gnal Gai n U nits Frequency Min. Typ. Max. dB 850 MHz 1950 MHz 18.5 16.5 20.0 18.0 21.5 19.5 P 1dB Output Power at 1dB C ompressi on dB m 850 MHz 1950 MHz 18.0 19.7 19.5 OIP3 Output Thi rd Order Intercept Poi nt dB m 850 MHz 1950 MHz 32.0 36.0 34.0 POUT Output Power @ -45dBc AC P IS-95 9 Forward C hannels dB m 1950 MHz Bandwi dth D etermi ned by Return Loss (>10dB) MHz IRL 13.0 4400 Input Return Loss dB 1950 MHz 14.0 20.0 Output Return Loss dB 1950 MHz 9.0 11.0 NF Noi se Fi gure dB 1950 MHz VD D evi ce Operati ng Voltage V ID D evi ce Operati ng C urrent mA ORL RTH, j-l Thermal Resi stance (juncti on to lead) Test Conditions: VS = 8 V RBIAS = 39 Ohms °C /W ID = 80 mA Typ. TL = 25ºC 4.5 5.5 4.5 4.9 5.3 72 80 88 70 OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm ZS = ZL = 50 Ohms Performance tests and ratings for Sirenza Microdevices’ products were performed internally by Sirenza and measured using specific computer systems and/or components and reflect the approximate performance of the products as measured by those tests. Any difference in circuit implementation, test software, or test equipment may affect actual performance. The information provided herein is believed to be reliable at press time and Sirenza Microdevices assumes no responsibility for the use of this information. All such use shall be entirely at the user’s own risk. Prices and specifications for Sirenza Microdevices’ products are subject to change without notice. Buyers should consult Sirenza Microdevices’ standard terms and conditions of sale for Sirenza’s limited warranty with regard to its products. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any product for use in life-support devices and/or systems. 303 South Technology Ct., Broomfield, CO 80021 Phone: (800) SMI-MMIC 1 http://www.sirenza.com EDS-102743 Rev. C Preliminary SBA-5089 DC-5 GHz Cascadable MMIC Amplifier Typical RF Performance at Key Operating Frequencies Frequency (MHz) Frequency (MHz) Symbol G Parameter Unit Small Signal Gain 100 500 850 1950 2400 3500 dB 20.5 20.2 19.9 18.0 17.1 15.3 OIP3 Output Third Order Intercept Point dB m 36.3 35.8 36.0 34.0 32.7 30.9 P 1dB Output Power at 1dB Compression dB m 19.8 19.8 19.7 19.5 18.8 17.1 IRL Input Return Loss dB 29 27 25 20 17 11.8 ORL Output Return Loss dB 27 21 17 11 11 11 S 21 Reverse Isolation dB 22 22 23 23 23 23 NF Noise Figure dB 4.1 4.3 4.2 4.5 ---- ---- TestConditions: Conditions: Test VVSS==88VV 39Ohms Ohms RRBIAS==39 BIAS 80mA mA Typ. Typ. IDID==80 25ºC TTL==25ºC L OIP3Tone ToneSpacing Spacing==11MHz, MHz, Pout Poutper pertone tone==00dBm dBm OIP 3 50Ohms Ohms ZZS==ZZL==50 S L Absolute Maximum Ratings Noise Figure vs. Frequency Noise Figure (dB) 6 5 4 +25c -40c +85c 3 0.5 1 1.5 Frequency (GHz) 2 130 mA Max. Device Voltage (VD) 6V Max. RF Input Power +17 dBm Max Operating Dissipated Power 0.65 W Max. Junction Temp. (TJ) +150°C Operating Temp. Range (TL) -40°C to +85°C Max. Storage Temp. +150°C Bias Conditions should also satisfy the following expression: TL=TLEAD IDVD < (TJ - TL) / RTH, j-l OIP3 vs. Frequency P1dB vs. Frequency 38 21 +25c -40c 36 +25c -40c +85c 20 +85c P1dB (dBm) OIP3 (dBm) Absolute Limit Operation of this device beyond any one of these limits may cause permanent damage. For reliable continous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. 2 0 Parameter Max. Device Current (ID) 34 32 30 19 18 17 16 28 15 26 0 0.5 1 1.5 2 2.5 3 0 3.5 0.5 Frequency (GHz) 303 South Technology Ct., Broomfield, CO 80021 1 1.5 2 2.5 3 3.5 Frequency (GHz) Phone: (800) SMI-MMIC 2 http://www.sirenza.com EDS-102743 Rev. C Preliminary SBA-5089 DC-5 GHz Cascadable MMIC Amplifier |S11| vs. Frequency |S21| vs. Frequency 0 25 20 s21 (dB) s11 (dB) -10 -20 15 10 +25c -40c +85c -30 +25c -40c 5 +85c -40 0 0 1 2 3 4 5 6 0 1 2 Frequency (GHz) |S12| vs. Frequency 4 5 6 |S22| vs. Frequency -10 0 +25c -40c +85c -10 s22 (dB) -15 s12 (dB) 3 Frequency (GHz) -20 -20 -25 -30 -30 -40 +25c -40c +85c 0 1 2 3 4 5 6 0 Frequency (GHz) 1 +25c -40c +85c 10 12 dBm 4 5 6 IS-95 @ 1950MHz Adj. Channel Pwr. vs. Channel Output Power dBc dBc -30 -35 -40 -45 -50 -55 -60 -65 -70 8 3 Frequency (GHz) IS-95 @850MHz Adj. Channel Pwr. vs. Channel output Pwr. 6 2 14 +25c -40c +85c 6 16 303 South Technology Ct., Broomfield, CO 80021 -30 -35 -40 -45 -50 -55 -60 -65 -70 Phone: (800) SMI-MMIC 3 8 10 12 dBm 14 16 http://www.sirenza.com EDS-102743 Rev. C Preliminary SBA-5089 DC-5 GHz Cascadable MMIC Amplifier Basic Application Circuit Application Circuit Element Values R BIAS VS 1 uF Frequency (Mhz ) 1000 pF Reference Designator 500 850 1950 2400 3500 CB 220 pF 100 pF 68 pF 56 pF 39 pF CD 100 pF 68 pF 22 pF 22 pF 15 pF LC 68 nH 33 nH 22 nH 18 nH 15 nH CD LC 4 1 SBA-5089 3 RF in RF out CB 2 CB Recommended Bias Resistor Values for ID=80mA RBIAS=( VS-VD ) / ID Supply Voltage(VS) RBIAS 33 8V 39 10 V 68 12 V 91 Note: RBIAS provides DC bias stability over temperature. VS 1 uF RBIAS BA5 7.5 V LC Mounting Instructions 1000 pF 1. Solder the copper pad on the backside of the device package to the ground plane. CD 2. Use a large ground pad area with many plated through-holes as shown. CB CB 3. We recommend 1 or 2 ounce copper. Measurement for this data sheet were made on a 31 mil thick FR-4 board with 1 ounce copper on both sides. Part Identification Marking The part will be marked with an “BA5” designator on the top surface of the package. Pin # Function 1 RF IN RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. 2, 4 GND Connection to ground. Use via holes for best performance to reduce lead inductance as close to ground leads as possible. 4 BA5 3 3 2 2 1 1 3 RF OUT/ RF output and bias pin. DC voltage is BIAS present on this pin, therefore a DC blocking capacitor is necessary for proper operation. Part Number Ordering Information Caution: ESD sensitive Appropriate precautions in handling, packaging and testing devices must be observed. 303 South Technology Ct., Broomfield, CO 80021 Description Part Number Reel Size Devices/Reel SBA-5089 7" 1000 Phone: (800) SMI-MMIC 4 http://www.sirenza.com EDS-102743 Rev. C Preliminary SBA-5089 DC-5 GHz Cascadable MMIC Amplifier PCB Pad Layout Dimensions in inches [millimeters] Nominal Package Dimensions Dimensions in inches [millimeters] Refer to package drawing posted at www.sirenza.com for tolerances. Bottom View Side View 303 South Technology Ct., Broomfield, CO 80021 Phone: (800) SMI-MMIC 5 http://www.sirenza.com EDS-102743 Rev. C