NGA-589 Product Description DC-5.5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices NGA-589 is a high performance InGaP/ GaAs HBT MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5.5 GHz with excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. At 850 Mhz and 80mA , the NGA589 typically provides +39 dBm output IP3, 20 dB of gain, and +19 dBm of 1dB compressed power using a single positive voltage supply. Only 2 DC-blocking capacitors, a bias resistor and an optional RF choke are required for operation. Product Features High Gain : 19.2 dB at 1950 MHz Cascadable 50 Ohm Patented InGaP Technology Gain & Return Loss vs. Freq. @T L=+25°C 0 24 Operates From Single Supply Low Thermal Resistance Package -10 Gain (dB) 18 IRL -20 12 ORL -30 6 Return Loss (dB) GAIN Applications PA Driver Amplifier Cellular, PCS, GSM, UMTS IF Amplifier Wireless Data, Satellite -40 0 0 1 2 3 4 Frequency (GHz) Sy mbol G 5 6 Parameter Small Signal Gain Units Frequency Min. Ty p. Max. dB 850 M Hz 1950 M Hz 2400 M Hz 18.0 20.0 19.2 18.9 22.0 P1dB Output Pow er at 1dB Compression dBm 850 M Hz 1950 M Hz 19.0 18.8 OIP3 Output Third Order Intercept Point dBm 850 M Hz 1950 M Hz 39.0 34.0 Bandw idth Determined by Return Loss (>10dB) IRL M Hz 5500 Input Return Loss dB 1950 M Hz 15.5 Output Return Loss dB 1950 M Hz 18.0 NF Noise Figure dB 1950 M Hz 3.7 VD Device Operating Voltage V ID Device Operating Current mA ORL RTH, j-l Thermal Resistance (junction to lead) Test Conditions: VS = 8 V RBIAS = 39 Ohms °C/W ID = 80 mA Typ. TL = 25ºC 4.5 4.9 5.3 72 80 88 111 OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm ZS = ZL = 50 Ohms The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 1 http://www.sirenza.com EDS-100376 Rev C Preliminary NGA-589 DC-5.5 GHz Cascadable MMIC Amplifier Typical RF Performance at Key Operating Frequencies Frequency (MHz) Sy mbol G Parameter Unit 100 500 850 1950 2400 3500 dB 20.5 20.3 20.0 19.2 19.0 18.4 37.7 38.8 39.0 34.0 31.4 27.7 Small Signal Gain OIP3 Output Third Order Intercept Point dBm P1dB Output Pow er at 1dB Compression dBm 18.3 19.0 19.0 18.8 17.6 15.4 IRL Input Return Loss dB 27.0 24.5 21.8 15.5 13.2 11.7 ORL Output Return Loss dB 20.9 21.4 22.1 18.0 15.9 19.3 S12 Reverse Isolation dB 22.6 22.7 22.8 23.2 23.4 24.0 NF Noise Figure dB 3.8 3.6 3.5 3.7 3.6 3.8 VS = 8 V Test Conditions: RBIAS = 39 Ohms ID = 80 mA Typ. TL = 25ºC OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm ZS = ZL = 50 Ohms Absolute Maximum Ratings Noise Figure vs. Frequency VD= 4.9 V, ID= 80 mA Noise Figure (dB) 7 TL = 25ºC Absolute Limit Max. Device Current (ID) 120 mA Max. Device Voltage (VD) 6V Max. RF Input Pow er +15 dBm Max. Junction Temp. (TJ) +150°C Operating Temp. Range (TL) -40°C to +85°C Max. Storage Temp. +150°C 6 5 Parameter 4 Operation of this device beyond any one of these limits may cause permanent damage. For reliable continous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. 3 2 0 0.5 1 1.5 2 2.5 Frequency (GHz) 3 3.5 Bias Conditions should also satisfy the follow ing expression: IDVD < (TJ - TL) / RTH, j-l OIP3 vs. Frequency 45 VD= 4.9 V, ID= 80 mA 22 +25°C -40°C +85°C TL TL 20 P1dB (dBm) 40 OIP3(dBm) P1dB vs. Frequency VD= 4.9 V, ID= 80 mA 35 30 25 18 +25°C -40°C +85°C 16 14 12 20 10 15 0 0.5 1 1.5 2 2.5 Frequency (GHz) 522 Almanor Ave., Sunnyvale, CA 94085 3 3.5 0 Phone: (800) SMI-MMIC 2 0.5 1 1.5 2 2.5 Frequency (GHz) 3 3.5 http://www.sirenza.com EDS-100376 Rev C Preliminary NGA-589 DC-5.5 GHz Cascadable MMIC Amplifier |S | vs. Frequency |S | vs. Frequency 21 11 VD= 4.9 V, ID= 80 mA 24 0 -10 S11 (dB) 18 S21 (dB) VD= 4.9 V, ID= 80 mA 12 6 0 0 1 2 3 4 Frequency (GHz) -30 +25°C -40°C +85°C TL 5 -20 -40 0 6 1 |S | vs. Frequency 5 VD= 4.9 V, ID= 80 mA 0 +25°C -40°C +85°C -10 S22 (dB) -15 -20 -20 -30 -25 +25°C -40°C +85°C TL -40 -30 0 1 2 3 4 Frequency (GHz) 5 6 0 95 5.50 90 5.35 85 80 +25°C -40°C 75 2 3 4 Frequency (GHz) 5 6 5.20 5.05 4.90 4.75 70 4.60 65 4.6 1 VD vs. Temperature for Constant ID = 80 mA VD (Volts) ID (mA) VD vs. ID over Temperature for fixed VS= 8 V, RBIAS= 39 Ohms * +85°C 6 22 TL S12 (dB) 2 3 4 Frequency (GHz) |S | vs. Frequency 12 VD= 4.9 V, ID= 80 mA -10 +25°C -40°C +85°C TL 4.8 4.9 VD (Volts) 5.1 5.2 -40 -15 10 35 Temperature (°C) 60 85 * Note: In the applications circuit on page 4, RBIAS compensates for voltage and current variation over temperature. 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 3 http://www.sirenza.com EDS-100376 Rev C Preliminary NGA-589 DC-5.5 GHz Cascadable MMIC Amplifier Basic Application Circuit Application Circuit Element Values RBIAS VS 1 uF 1000 pF 500 850 1950 2400 3500 CB 220 pF 100 pF 68 pF 56 pF 39 pF CD 100 pF 68 pF 22 pF 22 pF 15 pF LC 68 nH 33 nH 22 nH 18 nH 15 nH CD LC 1 RF in 4 NGA-589 3 RF out CB 2 CB Frequency (Mhz) Reference Designator Recommended Bias Resistor Values for ID=80mA Supply Voltage(VS) RBIAS 8V 33 39 10 V 12 V 62 91 Note: RBIAS provides DC bias stability over temperature. VS 1 uF RBIAS N5 7.5 V LC Mounting Instructions 1000 pF CD 1. Solder the copper pad on the backside of the device package to the ground plane. 2. Use a large ground pad area with many plated CB CB through-holes as shown. 3. We recommend 1 or 2 ounce copper. Measurement for this data sheet were made on a 31 mil thick FR-4 board with 1 ounce copper on both sides. Part Identification Marking The part will be marked with an N5 designator on the top surface of the package. 4 N5 Function 1 RF IN RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. 2, 4 GND Connection to ground. Use via holes for best performance to reduce lead inductance as close to ground leads as possible. 3 3 3 2 2 1 1 Pin # RF OUT/ RF output and bias pin. DC voltage is BIAS present on this pin, therefore a DC blocking capacitor is necessary for proper operation. Part Number Ordering Information Caution: ESD sensitive Appropriate precautions in handling, packaging and testing devices must be observed. 522 Almanor Ave., Sunnyvale, CA 94085 Description Part Number Reel Size Devices/Reel NGA-589 7" 1000 Phone: (800) SMI-MMIC 4 http://www.sirenza.com EDS-100376 Rev C Preliminary NGA-589 DC-5.5 GHz Cascadable MMIC Amplifier PCB Pad Layout Dimensions in inches [millimeters] Nominal Package Dimensions Dimensions in inches [millimeters] Refer to package drawing posted at www.sirenza.com for tolerances. Bottom View Side View 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 5 http://www.sirenza.com EDS-100376 Rev C