ETC SGA-4386

SGA-4386
Product Description
DC-4500 MHz, Cascadable
SiGe HBT MMIC Amplifier
Sirenza Microdevices’ SGA-4386 is a high performance SiGe
HBT MMIC Amplifier. A Darlington configuration featuring 1
micron emitters provides high F T and excellent thermal
perfomance. The heterojunction increases breakdown voltage
and minimizes leakage current between junctions. Cancellation
of emitter junction non-linearities results in higher suppression
of intermodulation products. At 850 Mhz and 45mA , the SGA4386 typically provides +28.9 dBm output IP3, 17 dB of gain,
and +15.3 dBm of 1dB compressed power using a single positive
voltage supply. Only 2 DC-blocking capacitors, a bias resistor
and an optional RF choke are required for operation.
Product Features
• High Gain : 14.6 dB at 1950 MHz
• Cascadable 50 Ohm
• Patented SiGe Technology
Gain & Return Loss vs. Frequency
VD= 3.2 V, ID= 45 mA (Typ.)
18
Gain (dB)
• Operates From Single Supply
• Low Thermal Resistance Package
0
-10
IRL
ORL
12
-20
GAIN
6
-30
0
Return Loss (dB)
24
Applications
• PA Driver Amplifier
• Cellular, PCS, GSM, UMTS
• IF Amplifier
• Wireless Data, Satellite
-40
0
1
2
3
Frequency (GHz)
Sy mbol
G
4
5
Parameter
Small Signal Gain
Units
Frequency
Min.
Ty p.
Max.
dB
850 M Hz
1950 M Hz
2400 M Hz
15.0
17.0
14.6
13.7
18.5
P1dB
Output Pow er at 1dB Compression
dBm
850 M Hz
1950 M Hz
15.3
13.0
OIP3
Output Third Order Intercept Point
dBm
850 M Hz
1950 M Hz
28.9
26.9
Bandw idth Determined by Return Loss (>10dB)
IRL
M Hz
4500
Input Return Loss
dB
1950 M Hz
13.2
Output Return Loss
dB
1950 M Hz
15.2
NF
Noise Figure
dB
1950 M Hz
3.1
VD
Device Operating Voltage
V
2.9
3.2
3.5
ID
Device Operating Current
mA
41
45
49
ORL
RTH, j-l
Thermal Resistance (junction to lead)
Test Conditions:
VS = 8 V
RBIAS = 110 Ohms
°C/W
ID = 45 mA Typ.
TL = 25ºC
97
OIP3 Tone Spacing = 1 MHz, Pout per tone = -5 dBm
ZS = ZL = 50 Ohms
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of
this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are
implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc..
All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-100641 Rev. F
Preliminary
SGA-4386 DC-4500 MHz Cascadable MMIC Amplifier
Typical RF Performance at Key Operating Frequencies
Sy mbol
G
Parameter
Frequency
(MHz)
Frequency
Frequency
(MHz)(MHz)
850
1950
Unit
100
500
dB
17.9
17.4
17.0
Small Signal Gain
3500
14.6
13.7
11.8
OIP3
Output Third Order Intercept Point
dBm
29.1
28.9
26.9
25.9
P1dB
Output Pow er at 1dB Compression
dBm
14.8
15.3
13.0
11.9
IRL
Input Return Loss
dB
12.5
12.5
12.8
13.2
12.4
10.9
ORL
Output Return Loss
dB
10.6
11.4
12.9
15.2
15.2
15.0
S12
Reverse Isolation
dB
21.3
21.5
21.6
20.8
19.9
17.3
NF
Noise Figure
dB
2.8
2.9
3.1
3.4
VSS== 88 V
V
V
RBIAS
= 110 Ohms
R
BIAS= 39 Ohms
Test Conditions:
45 mA
mA Typ.
Typ.
IIDD == 80
25ºC
TTLL == 25ºC
OIP33 Tone
Tone Spacing
Spacing == 11 MHz,
MHz, Pout
Pout per
per tone
tone == 0-5dBm
dBm
OIP
50 Ohms
Ohms
ZZSS== ZZLL== 50
Absolute Maximum Ratings
Noise Figure vs. Frequency
VD= 3.2 V, ID= 45 mA (Typ.)
Noise Figure (dB)
5
Parameter
Absolute Limit
Max. Device Current (ID)
90 mA
Max. Device Voltage (VD)
5V
4
Max. RF Input Pow er
+18 dBm
3
Max. Junction Temp. (TJ)
+150°C
Operating Temp. Range (TL)
-40°C to +85°C
Max. Storage Temp.
+150°C
2
Operation of this device beyond any one of these limits may
cause permanent damage. For reliable continous operation,
the device voltage and current must not exceed the maximum
operating values specified in the table on page one.
1
TL=+25ºC
0
0
0.5
1
1.5
2
Frequency (GHz)
2.5
3
Bias conditions should also satisfy the follow ing expression:
IDVD < (TJ - TL) / RTH, j-l
OIP3 vs. Frequency
P1dB vs. Frequency
VD=3.2 V, ID= 45 mA (Typ.)
35
VD= 3.2 V, ID= 45 mA (Typ.)
18
15
P1dB (dBm)
30
OIP3 (dBm)
2400
25
20
12
9
TL=+25ºC
TL=+25ºC
15
6
0
0.5
1
1.5
2
Frequency (GHz)
522 Almanor Ave., Sunnyvale, CA 94085
2.5
3
0
Phone: (800) SMI-MMIC
2
0.5
1
1.5
2
Frequency (GHz)
2.5
3
http://www.sirenza.com
EDS-100641 Rev. F
Preliminary
SGA-4386 DC-4500 MHz Cascadable MMIC Amplifier
Typical RF Performance Over Temperature ( Bias: VD= 3.2 V,
|S | vs. Frequency
21
24
11
-10
S11(dB)
S21(dB)
)
|S | vs. Frequency
0
18
12
-20
-30
6
+25°C
-40°C
+85°C
TL
0
1
2
3
Frequency (GHz)
4
-40
0
5
|S | vs. Frequency
12
-10
+25°C
-40°C
+85°C
TL
0
1
2
3
Frequency (GHz)
4
5
|S | vs. Frequency
22
0
-10
S22(dB)
-15
S12(dB)
ID= 45 mA (Typ.)
-20
-20
-30
-25
+25°C
-40°C
+85°C
TL
-40
-30
0
1
2
3
Frequency (GHz)
4
+25°C
-40°C
+85°C
TL
0
5
1
2
3
Frequency (GHz)
4
5
NOTE: Full S-parameter data available at www.sirenza.com
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
3
http://www.sirenza.com
EDS-100641 Rev. F
Preliminary
SGA-4386 DC-4500 MHz Cascadable MMIC Amplifier
Basic Application Circuit
Application Circuit Element Values
R BIAS
VS
1 uF
1000
pF
500
850
1950
2400
3500
CB
220 pF
100 pF
68 pF
56 pF
39 pF
CD
100 pF
68 pF
22 pF
22 pF
15 pF
LC
68 nH
33 nH
22 nH
18 nH
15 nH
CD
LC
4
1 SGA-4386 3
RF in
RF out
CB
2
CB
R ecommended B ias R esistor Values for ID=45mA
R BIAS=( VS-VD ) / ID
Supply Voltage(VS)
6V
RBIAS
62
8V
110
10 V
150
12 V
200
Note: RBIAS provi des D C bi as stabi li ty over temperature.
VS
1 uF
RBIAS
A43
CB
Frequency (Mhz)
Reference
Designator
Mounting Instructions
1000 pF
CD
LC
1. Use a large ground pad area under device pins 2
and 4 with many plated through-holes as shown.
CB
2. We recommend 1 or 2 ounce copper. Measurements
for this data sheet were made on a 31 mil thick FR-4
board with 1 ounce copper on both sides.
Part Identification Marking
The part will be marked with an “A43” designator on
the top surface of the package.
3
4
A43
Pin #
Function
1
RF IN
RF input pin. This pin requires the use
of an external DC blocking capacitor
chosen for the frequency of operation.
2, 4
GND
Connection to ground. Use via holes for
best performance to reduce lead
inductance as close to ground leads as
possible.
2
3
1
RF OUT/ RF output and bias pin. DC voltage is
BIAS
present on this pin, therefore a DC
blocking capacitor is necessary for
proper operation.
Part Number Ordering Information
Caution: ESD sensitive
Appropriate precautions in handling, packaging
and testing devices must be observed.
522 Almanor Ave., Sunnyvale, CA 94085
Description
Part N umber
R eel Siz e
D ev ices/R eel
SGA-4386
13"
3000
Phone: (800) SMI-MMIC
4
http://www.sirenza.com
EDS-100641 Rev. F
Preliminary
SGA-4386 DC-4500 MHz Cascadable MMIC Amplifier
PCB Pad Layout
Dimensions in inches [millimeters]
Nominal Package Dimensions
Dimensions in inches [millimeters]
Refer to drawing posted at www.sirenza.com for tolerances.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
5
http://www.sirenza.com
EDS-100641 Rev. F