SGA-4386 Product Description DC-4500 MHz, Cascadable SiGe HBT MMIC Amplifier Sirenza Microdevices SGA-4386 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high F T and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. At 850 Mhz and 45mA , the SGA4386 typically provides +28.9 dBm output IP3, 17 dB of gain, and +15.3 dBm of 1dB compressed power using a single positive voltage supply. Only 2 DC-blocking capacitors, a bias resistor and an optional RF choke are required for operation. Product Features High Gain : 14.6 dB at 1950 MHz Cascadable 50 Ohm Patented SiGe Technology Gain & Return Loss vs. Frequency VD= 3.2 V, ID= 45 mA (Typ.) 18 Gain (dB) Operates From Single Supply Low Thermal Resistance Package 0 -10 IRL ORL 12 -20 GAIN 6 -30 0 Return Loss (dB) 24 Applications PA Driver Amplifier Cellular, PCS, GSM, UMTS IF Amplifier Wireless Data, Satellite -40 0 1 2 3 Frequency (GHz) Sy mbol G 4 5 Parameter Small Signal Gain Units Frequency Min. Ty p. Max. dB 850 M Hz 1950 M Hz 2400 M Hz 15.0 17.0 14.6 13.7 18.5 P1dB Output Pow er at 1dB Compression dBm 850 M Hz 1950 M Hz 15.3 13.0 OIP3 Output Third Order Intercept Point dBm 850 M Hz 1950 M Hz 28.9 26.9 Bandw idth Determined by Return Loss (>10dB) IRL M Hz 4500 Input Return Loss dB 1950 M Hz 13.2 Output Return Loss dB 1950 M Hz 15.2 NF Noise Figure dB 1950 M Hz 3.1 VD Device Operating Voltage V 2.9 3.2 3.5 ID Device Operating Current mA 41 45 49 ORL RTH, j-l Thermal Resistance (junction to lead) Test Conditions: VS = 8 V RBIAS = 110 Ohms °C/W ID = 45 mA Typ. TL = 25ºC 97 OIP3 Tone Spacing = 1 MHz, Pout per tone = -5 dBm ZS = ZL = 50 Ohms The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 1 http://www.sirenza.com EDS-100641 Rev. F Preliminary SGA-4386 DC-4500 MHz Cascadable MMIC Amplifier Typical RF Performance at Key Operating Frequencies Sy mbol G Parameter Frequency (MHz) Frequency Frequency (MHz)(MHz) 850 1950 Unit 100 500 dB 17.9 17.4 17.0 Small Signal Gain 3500 14.6 13.7 11.8 OIP3 Output Third Order Intercept Point dBm 29.1 28.9 26.9 25.9 P1dB Output Pow er at 1dB Compression dBm 14.8 15.3 13.0 11.9 IRL Input Return Loss dB 12.5 12.5 12.8 13.2 12.4 10.9 ORL Output Return Loss dB 10.6 11.4 12.9 15.2 15.2 15.0 S12 Reverse Isolation dB 21.3 21.5 21.6 20.8 19.9 17.3 NF Noise Figure dB 2.8 2.9 3.1 3.4 VSS== 88 V V V RBIAS = 110 Ohms R BIAS= 39 Ohms Test Conditions: 45 mA mA Typ. Typ. IIDD == 80 25ºC TTLL == 25ºC OIP33 Tone Tone Spacing Spacing == 11 MHz, MHz, Pout Pout per per tone tone == 0-5dBm dBm OIP 50 Ohms Ohms ZZSS== ZZLL== 50 Absolute Maximum Ratings Noise Figure vs. Frequency VD= 3.2 V, ID= 45 mA (Typ.) Noise Figure (dB) 5 Parameter Absolute Limit Max. Device Current (ID) 90 mA Max. Device Voltage (VD) 5V 4 Max. RF Input Pow er +18 dBm 3 Max. Junction Temp. (TJ) +150°C Operating Temp. Range (TL) -40°C to +85°C Max. Storage Temp. +150°C 2 Operation of this device beyond any one of these limits may cause permanent damage. For reliable continous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. 1 TL=+25ºC 0 0 0.5 1 1.5 2 Frequency (GHz) 2.5 3 Bias conditions should also satisfy the follow ing expression: IDVD < (TJ - TL) / RTH, j-l OIP3 vs. Frequency P1dB vs. Frequency VD=3.2 V, ID= 45 mA (Typ.) 35 VD= 3.2 V, ID= 45 mA (Typ.) 18 15 P1dB (dBm) 30 OIP3 (dBm) 2400 25 20 12 9 TL=+25ºC TL=+25ºC 15 6 0 0.5 1 1.5 2 Frequency (GHz) 522 Almanor Ave., Sunnyvale, CA 94085 2.5 3 0 Phone: (800) SMI-MMIC 2 0.5 1 1.5 2 Frequency (GHz) 2.5 3 http://www.sirenza.com EDS-100641 Rev. F Preliminary SGA-4386 DC-4500 MHz Cascadable MMIC Amplifier Typical RF Performance Over Temperature ( Bias: VD= 3.2 V, |S | vs. Frequency 21 24 11 -10 S11(dB) S21(dB) ) |S | vs. Frequency 0 18 12 -20 -30 6 +25°C -40°C +85°C TL 0 1 2 3 Frequency (GHz) 4 -40 0 5 |S | vs. Frequency 12 -10 +25°C -40°C +85°C TL 0 1 2 3 Frequency (GHz) 4 5 |S | vs. Frequency 22 0 -10 S22(dB) -15 S12(dB) ID= 45 mA (Typ.) -20 -20 -30 -25 +25°C -40°C +85°C TL -40 -30 0 1 2 3 Frequency (GHz) 4 +25°C -40°C +85°C TL 0 5 1 2 3 Frequency (GHz) 4 5 NOTE: Full S-parameter data available at www.sirenza.com 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 3 http://www.sirenza.com EDS-100641 Rev. F Preliminary SGA-4386 DC-4500 MHz Cascadable MMIC Amplifier Basic Application Circuit Application Circuit Element Values R BIAS VS 1 uF 1000 pF 500 850 1950 2400 3500 CB 220 pF 100 pF 68 pF 56 pF 39 pF CD 100 pF 68 pF 22 pF 22 pF 15 pF LC 68 nH 33 nH 22 nH 18 nH 15 nH CD LC 4 1 SGA-4386 3 RF in RF out CB 2 CB R ecommended B ias R esistor Values for ID=45mA R BIAS=( VS-VD ) / ID Supply Voltage(VS) 6V RBIAS 62 8V 110 10 V 150 12 V 200 Note: RBIAS provi des D C bi as stabi li ty over temperature. VS 1 uF RBIAS A43 CB Frequency (Mhz) Reference Designator Mounting Instructions 1000 pF CD LC 1. Use a large ground pad area under device pins 2 and 4 with many plated through-holes as shown. CB 2. We recommend 1 or 2 ounce copper. Measurements for this data sheet were made on a 31 mil thick FR-4 board with 1 ounce copper on both sides. Part Identification Marking The part will be marked with an A43 designator on the top surface of the package. 3 4 A43 Pin # Function 1 RF IN RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. 2, 4 GND Connection to ground. Use via holes for best performance to reduce lead inductance as close to ground leads as possible. 2 3 1 RF OUT/ RF output and bias pin. DC voltage is BIAS present on this pin, therefore a DC blocking capacitor is necessary for proper operation. Part Number Ordering Information Caution: ESD sensitive Appropriate precautions in handling, packaging and testing devices must be observed. 522 Almanor Ave., Sunnyvale, CA 94085 Description Part N umber R eel Siz e D ev ices/R eel SGA-4386 13" 3000 Phone: (800) SMI-MMIC 4 http://www.sirenza.com EDS-100641 Rev. F Preliminary SGA-4386 DC-4500 MHz Cascadable MMIC Amplifier PCB Pad Layout Dimensions in inches [millimeters] Nominal Package Dimensions Dimensions in inches [millimeters] Refer to drawing posted at www.sirenza.com for tolerances. 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 5 http://www.sirenza.com EDS-100641 Rev. F