ETC SNA-386-TR1

SNA-386
Product Description
DC-3 GHz, Cascadable
GaAs MMIC Amplifier
Sirenza Microdevices’ SNA-386 is a GaAs monolithic
broadband amplifier (MMIC) housed in a low-cost surfacemountable plastic package. At 1950 MHz. this amplifier
provides 20dB of gain when biased at 35mA.
The use of an external resistor allows for bias flexibility and
stability. These unconditionally stable amplifiers are designed
for use as general purpose 50 ohm gain blocks.
Also available in chip form (SNA-300), its small size (0.3mm
x 0.3mm) and gold metallization make it an ideal choice for
use in hybrid circuits.
Output Power vs. Frequency
16
14
dBm
Applications
• PA Driver Amplifier
• Cellular, PCS, GSM, UMTS
• IF Amplifier
• Wireless Data, Satellite
12
10
8
0.1
0.5
1
1.5
2
2.5
3
3.5
4
GHz
Sy mbol
Product Features
• Patented GaAs HBT Technology
• Cascadable 50 Ohm Gain Block
• 21dB Gain, +23dBm TOIP
• Operates From Single Supply
• Low Cost Surface Mount Plastic Package
Parameter
Units
Frequency
Min.
Ty p.
19.0
21.0
20.0
19.5
GP
Small Signal Pow er Gain
dB
dB
dB
850 M Hz
1950 M Hz
2400 M Hz
GF
Gain Flatness
dB
0.1-3 GHz
BW3dB
Max.
+/- 1.5
3.0
3dB Bandw idth
GHz
P1dB
Output Pow er at 1dB Compression
dBm
1950 M Hz
10.0
OIP3
Output Third Order Intercept Point
dBm
1950 M Hz
23.0
NF
Noise Figure
dB
1950 M Hz
4.0
VSWR
Input / Output
-
0.1-3 GHz
1.5:1
Reverse Isolation
dB
0.1-3 GHz
22.0
VD
Device Operating Voltage
V
3.2
3.7
4.1
ID
Device Operating Current
mA
30
35
40
ISOL
dG/dT
Device Gain Temperature Coefficient
dB/°C
-0.003
RTH, j-l
Thermal Resistance (junction to lead)
°C/W
330
Test Conditions:
VS = 8 V
RBIAS = 120 Ohms
ID = 35 mA Typ.
TL = 25ºC
OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm
ZS = ZL = 50 Ohms
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of
this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are
implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc..
All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-102434 Rev A
Preliminary
SNA-386 DC-3 GHz Cascadable MMIC Amplifier
Typical Performance at 25° C (Vds = 3.7V, Ids = 35mA)
|S21| vs. Frequency
|S11| vs. Frequency
dB
0
23
-10
21
dB
-20
19
17
-30
15
-40
0.1
0.5
1
1.5
2
2.5
0.1
3
0.5
1
GHz
1.5
2
2.5
3
GHz
|S22| vs. Frequency
|S12| vs. Frequency
0
0
-5
-10
-10
dB
dB
-15
-20
-20
-30
-25
-30
-40
0.1
0.5
1
1.5
2
2.5
3
0.1
0.5
1
Noise Figure vs. Frequency
dB
1.5
2
2.5
3
2.5
3
GHz
GHz
TOIP vs. Frequency
5
30
4.5
28
dBm
4
3.5
26
24
22
3
20
0.1
0.5
1.0
1.5
2
2.5
3
0.1
GHz
0.5
1
1.5
2
GHz
Absolute Maximum Ratings
Parameter
Absolute Limit
Max. Device Current (ID)
70 mA
Max. Device Voltage (VD)
6V
Max. RF Input Pow er
+10 dBm
Max. Junction Temp. (TJ)
+150°C
Operating Temp. Range (TL)
-40°C to +85°C
Max. Storage Temp.
+150°C
Operation of this device beyond any one of these limits may
cause permanent damage. For reliable continous operation,
the device voltage and current must not exceed the maximum
operating values specified in the table on page one.
Bias Conditions should also satisfy the follow ing expression:
IDVD < (TJ - TL) / RTH, j-l
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
2
http://www.sirenza.com
EDS-102434 Rev A
Preliminary
SNA-386 DC-3 GHz Cascadable MMIC Amplifier
Application Circuit Element Values
Typical Application Circuit
R BIAS
1 uF
LC
1
RF in
500
850
1950
2400
3500
CB
220 pF
100 pF
68 pF
56 pF
39 pF
CD
100 pF
68 pF
22 pF
22 pF
15 pF
LC
68 nH
33 nH
22 nH
18 nH
15 nH
CD
1000
pF
4
SNA-386
Recommended Bias Resistor Values for ID=35mA
RBIAS=( VS-VD ) / ID
3
RF out
CB
2
CB
Frequency (Mhz)
Reference
Designator
Supply Voltage(VS)
5V
RBIAS
36
6V
68
8V
120
10 V
180
Note: RBIAS provides DC bias stability over temperature.
VS
1 uF
RBIAS
1000 pF
LC
Mounting Instructions
CD
S3
1. Use a large ground pad area under device pins 2
and 4 with many plated through-holes as shown.
CB
CB
2. We recommend 1 or 2 ounce copper. Measurements
for this data sheet were made on a 31 mil thick FR-4
board with 1 ounce copper on both sides.
Part Identification Marking
The part will be marked with an “S3” designator on the
top surface of the package.
3
4
S3
2
Pin #
Function
1
RF IN
RF input pin. This pin requires the use
of an external DC blocking capacitor
chosen for the frequency of operation.
2, 4
GND
Connection to ground. For optimum RF
performance, use via holes as close to
ground leads as possible to reduce lead
inductance.
3
1
Description
RF OUT/ RF output and bias pin. DC voltage is
BIAS
present on this pin, therefore a DC
blocking capacitor is necessary for
proper operation.
Part Number Ordering Information
Caution: ESD sensitive
Appropriate precautions in handling, packaging
and testing devices must be observed.
522 Almanor Ave., Sunnyvale, CA 94085
Part Number
Reel Size
Devices/Reel
SNA-386-TR1
7"
1000
SNA-386-TR2
13"
3000
SNA-386-TR3
13"
5000
Phone: (800) SMI-MMIC
3
http://www.sirenza.com
EDS-102434 Rev A
Preliminary
SNA-386 DC-3 GHz Cascadable MMIC Amplifier
PCB Pad Layout
Dimensions in inches [millimeters]
Nominal Package Dimensions
Dimensions in inches [millimeters]
Refer to drawing posted at www.sirenza.com for tolerances.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
4
http://www.sirenza.com
EDS-102434 Rev A