SGA-2486 Product Description SGA-2486 The SGA-2486 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction nonlinearities results in higher suppression of intermodulation products. Only 2 DC-blocking capacitors, a bias resistor and an optional RF choke are required for operation. Product Features • Now available in Lead Free, RoHS Compliant, & Green Packaging • High Gain : 16.7 dB at 1950 MHz • Cascadable 50 Ohm • Operates From Single Supply • Low Thermal Resistance Package Gain & Return Loss vs. Freq. @TL=+25°C 0 GAIN -10 IRL ORL 12 -20 6 -30 0 Applications Return Loss (dB) Gain (dB) 18 RoHS Compliant & Green Package DC-5000 MHz, Cascadable SiGe HBT MMIC Amplifier The matte tin finish on Sirenza’s lead-free package utilizes a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95. This package is also manufactured with green molding compounds that contain no antimony trioxide nor halogenated fire retardants. 24 Pb • • • • PA Driver Amplifier Cellular, PCS, GSM, UMTS IF Amplifier Wireless Data, Satellite -40 0.0 1.0 2.0 3.0 Frequency (GHz) Symbol G 4.0 5.0 Parameter Small Signal Gain Units Frequency Min. Typ. Max. dB dB dB 850 MHz 1950 MHz 2400 MHz 17.8 19.8 16.7 15.3 21.8 P1dB Output Pow er at 1dB Compression dBm dBm 850 MHz 1950 MHz 8.4 7.5 OIP3 Output Third Order Intercept Point dBm dBm 850 MHz 1950 MHz 20.0 20.8 Bandw idth Determined by Return Loss (>8dB) IRL MHz 5000 Input Return Loss dB 1950 MHz 10.9 Output Return Loss dB 1950 MHz 16.5 NF Noise Figure dB 1950 MHz 3.2 VD Device Operating Voltage V 2.4 2.7 3.0 ID Device Operating Current mA 17 20 23 ORL RTH, j-l Thermal Resistance (junction to lead) Test Conditions: VS = 5 V RBIAS = 120 Ohms °C/W ID = 20 mA Typ. TL = 25ºC 97 OIP3 Tone Spacing = 1 MHz, Pout per tone = -10 dBm ZS = ZL = 50 Ohms The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights reserved. 303 Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC 1 http://www.sirenza.com EDS-100629 Rev E SGA-2486 DC-5000 MHz Cascadable MMIC Amplifier Preliminary Typical RF Performance at Key Operating Frequencies Symbol G Parameter Frequency (MHz) Frequency Frequency (MHz)(MHz) 500 850 1950 2400 dB 20.4 19.8 16.7 15.3 20.7 20.0 20.8 21.2 Unit Small Signal Gain 100 3500 OIP3 Output Third Order Intercept Point dBm P1dB Output Power at 1dB Compression dBm 8.0 8.4 7.5 7.1 IRL Input Return Loss dB 18.6 14.6 12.7 10.9 9.8 8.2 ORL Output Return Loss dB 16.7 16.9 17.4 16.5 16.9 15.7 S Reverse Isolation dB 23.2 23.2 23.1 22.8 22.6 21.3 NF Noise Figure dB 2.7 2.7 3.2 3.3 VS== 85 V V V S = 120 Ohms R RBIAS BIAS= 39 Ohms Test Conditions: 20 mA mA Typ. Typ. IIDD == 80 T = 25ºC TLL = 25ºC OIP3 Tone Tone Spacing Spacing == 11 MHz, MHz, Pout per tone = 0-10 dBm OIP dBm 3 Z = Z = 50 Ohms ZSS= ZLL= 50 Ohms Absolute Maximum Ratings Parameter Absolute Limit Max. Device Current (ID) 40 mA Noise Figure vs. Frequency Noise Figure (dB) VD= 2.7 V, ID= 20 mA 5 Max. Device Voltage (VD) 5V 4 Max. RF Input Power +18 dBm Max. Junction Temp. (TJ) +150°C Operating Temp. Range (TL) -40°C to +85°C Max. Storage Temp. +150°C 3 2 TL=+25ºC 1 Operation of this device beyond any one of these limits may cause permanent damage. For reliable continous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. 0 0 0.5 1 1.5 2 Frequency (GHz) 2.5 3 Bias conditions should also satisfy the following expression: IDVD < (TJ - TL) / RTH, j-l P1dB vs. Frequency OIP3 vs. Frequency VD= 2.7 V, ID= 20 mA VD= 2.7 V, ID= 20 mA 10 30 8 P1dB (dBm) OIP3 (dBm) 25 20 TL=+25ºC 15 6 4 TL=+25ºC 2 10 0 0 0.5 1 1.5 2 Frequency (GHz) 303 Technology Court, Broomfield, CO 80021 2.5 3 0 Phone: (800) SMI-MMIC 2 0.5 1 1.5 2 Frequency (GHz) 2.5 3 http://www.sirenza.com EDS-100629 Rev E SGA-2486 DC-5000 MHz Cascadable MMIC Amplifier Preliminary Typical RF Performance Over Temperature ( Bias: VD= 2.7 V, |S | vs. Frequency 21 24 TL 11 -10 S11 (dB) S21(dB) ) |S | vs. Frequency 0 +25°C -40°C +85°C 18 ID= 20 mA (Typ.) 12 -20 -30 6 +25°C -40°C +85°C TL -40 0 0 1 2 3 Frequency (GHz) 0 5 |S | vs. Frequency 12 -10 TL 1 +25°C -40°C +85°C 2 3 Frequency (GHz) 4 22 -10 -20 -25 -20 -30 +25°C -40°C +85°C TL -30 -40 0 1 2 3 Frequency (GHz) 5 |S | vs. Frequency 0 S22 (dB) -15 S12(dB) 4 4 5 0 1 2 3 Frequency (GHz) 4 5 NOTE: Full S-parameter data available at www.sirenza.com 303 Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC 3 http://www.sirenza.com EDS-100629 Rev E SGA-2486 DC-5000 MHz Cascadable MMIC Amplifier Preliminary Basic Application Circuit R BIAS VS Application Circuit Element Values Frequency (Mhz) 1 uF CD 1000 pF Reference Designator 500 850 LC 4 1 SGA-2486 3 RF in 2400 3500 CB 220 pF 100 pF 68 pF 56 pF 39 pF CD 100 pF 68 pF 22 pF 22 pF 15 pF LC 68 nH 33 nH 22 nH 18 nH 15 nH RF out Recommended Bias Resistor Values for ID=20mA RBIAS=( VS-VD ) / ID CB 2 CB 1950 VS 5V 6V 8V RBIAS 120 160 270 10 V 360 Note: RBIAS provides DC bias stability over temperature. 1 uF RBIAS Supply Voltage(VS) 1000 pF A24 LC CB CD Mounting Instructions CB 1. Use a large ground pad area under device pins 2 and 4 with many plated through-holes as shown. 3. We recommend 1 or 2 ounce copper. Measurements for this data sheet were made on a 31 mil thick FR-4 board with 1 ounce copper on both sides. Part Identification Marking 3 4 A24 Pin # Function 1 RF IN RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. 2, 4 GND Connection to ground. Use via holes for best performance to reduce lead inductance as close to ground leads as possible. 3 2 4 24Z 2 3 1 1 Description RF OUT/ RF output and bias pin. DC voltage is BIAS present on this pin, therefore a DC blocking capacitor is necessary for proper operation. Caution: ESD sensitive Appropriate precautions in handling, packaging and testing devices must be observed. Part Number Ordering Information Part Number Reel Size Devices/Reel See Application Note AN-075 SGA-2486 13" 3000 for Package Outline Drawing SGA-2486Z 13" 3000 303 Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC 4 http://www.sirenza.com EDS-100629 Rev E