AUK STS9018

STS9018
Semiconductor
NPN Silicon Transistor
Description
• High frequency low noise amplifier application
• VHF band amplifier application
Features
• Low noise figure : NF = 4dB(Max.) at f=100MHz
• High transition frequency fT = 800MHz(Typ.)
Ordering Information
Type NO.
Marking
STS9018
STS9018
Package Code
TO-92
Outline Dimensions
unit : mm
3.45±0.1
4.5±0.1
4.5±0.1
2.25±0.1
14.0±0.40
0.4±0.02
2.06±0.1
1.27 Typ.
2.54 Typ.
PIN Connections
1. Emitter
2. Base
3. Collector
0.38
1.20±0.1
1 2 3
KST-9019-000
1
STS9018
Ta=25°°C
Absolute maximum ratings
Characteristic
Symbol
Ratings
Unit
Collector-Base voltage
VCBO
40
V
Collector-Emitter voltage
VCEO
30
V
Emitter-Base voltage
VEBO
4
V
Collector current
IC
20
mA
Emitter current
IE
-20
mA
Collector dissipation
PC
625
mW
Junction temperature
Tj
150
°C
Tstg
-55~150
°C
Storage temperature range
Ta=25°°C
Electrical Characteristics
Characteristic
Symbol
Test Condition
Min. Typ. Max.
Unit
Collector cut-off current
ICBO
VCB=40V, IE=0
-
-
0.1
µA
Emitter cut-off current
IEBO
VEB=4V, IC=0
-
-
0.1
µA
DC current gain
hFE*
VCE=5V, IC=1mA
54
-
198
-
500
800
-
MHz
-
-
4
15
-
-
Transistor frequency
fT
Noise figure
NF
Power gain
GPE
VCE=10V, IE=-8mA
VCB=6V,IE=-1mA, f=100MHz
dB
* : hFE rank / F : 54~80, G : 70~108, H : 97~146, I : 132~198.
KST-9019-000
2
STS9018
Electrical Characteristic Curves
Fig. 1 PC –Ta
Fig. 3 hFE-IC
Fig. 5 Cob-VCB, Cib-VEB
Fig. 2 IC-VCE
Fig. 4 fT-IE
Fig. 6 Yie-IC
KST-9019-000
3
STS9018
Electrical Characteristic Curves
Fig. 7 IC-Yoe
Fig. 8 IC-Yfe
Fig. 9 IC - Yre
KST-9019-000
4