2SA1981SF Semiconductor PNP Silicon Transistor Description • Audio power amplifier application Features • High hFE : hFE=100~320 • Complementary pair with 2SC5344SF Ordering Information Type NO. Marking 2SA1981SF Package Code SOT-23F EA : hFE rank Outline Dimensions unit : mm 2.4±0.1 1.6±0.1 1.90 BSC KST-2067-001 0.9±0.1 0.15±0.05 2 0.4±0.05 3 0~0.1 2.9±0.1 1 PIN Connections 1. Base 2. Emitter 3. Collector 1 2SA1981SF (Ta=25°°C) Absolute maximum ratings Characteristic Symbol Ratings Unit Collector-Base voltage VCBO -35 V Collector-Emitter voltage VCEO -30 V Emitter-Base voltage VEBO -5 V Collector current IC -800 mA Collector dissipation PC 200 mW Junction temperature Tj 150 °C Storage temperature Tstg -55~150 °C (Ta=25°°C) Electrical Characteristics Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector-Base breakdown voltage BVCBO IC=-500µA, IE=0 -35 - - V Collector-Emitter breakdown voltage BVCEO IC=-1mA, IB=0 -30 - - V Emitter-Base breakdown voltage BVEBO IE=-50µA, IC=0 -5 - - V Collector cut-off current ICBO VCB=-35V, IE=0 - - -0.1 µA Emitter cut-off current IEBO VEB=-5V, IC=0 - - -0.1 µA 100 - 320 - IC=-500mA, IB=-20mA - - -0.5 V VCE=-5V, IE=10mA - 120 - MHz VCB=-10V, IE=0, f=1MHz - 19 - pF DC current gain Collector-Emitter saturation voltage Transition frequency Collector output capacitance hFE * VCE(sat) fT Cob VCE=-1V, IC=-100mA * : hFE rank / O : 100~200, Y : 160~320 KST-2067-001 2 2SA1981SF Electrical Characteristic Curves Fig. 1 Pc-Ta Fig. 3 IC - VCE Fig. 2 IC -VBE Fig. 4 hFE - IC Fig. 5 VCE(SAT) - IC KST-2067-001 3