CS 35 Phase Control Thyristors VRSM VRRM VDSM VDRM V V 900 1300 1500 800 1200 1400 VRRM = 800-1400 V IT(RMS) = 120 A IT(AV)M = 69 A Type 2 1 TO-208AC (TO-65) 2 3 3 CS 35-08io4 CS 35-12io4 CS 35-14io4 1 ¼"-28 UNF-2 A 1 = Anode, 2 = Cathode, 3 = Gate Symbol Test Conditions Maximum Ratings Features Thyristor for line frequencies International standard package JEDEC TO-208AC Planar glassivated chip Long-term stability of blocking currents and voltages ● IT(RMS) IT(AV)M ITSM I2t (di/dt)cr TVJ = TVJM Tcase = 85°C; 180° sine Tcase = 80°C; 180° sine 120 63 69 A A A TVJ = 45°C; VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1200 1340 A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1100 1250 A A TVJ = 45°C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 7200 7550 A2s A2s TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 6050 6500 A2s A2s TVJ = TVJM repetitive, IT = 150 A f = 50 Hz, tP =200 ms VD = 2/3 VDRM IG = 0.5 A non repetitive, IT = IT(AV)M diG/dt = 0.5 A/ms 150 A/ms 400 A/ms 1000 V/ms (dv/dt)cr TVJ = TVJM; VDR = 2/3 VDRM RGK = ¥; method 1 (linear voltage rise) PGM TVJ = TVJM IT = IT(AV)M tP = 30 ms tP = 500 ms PG(AV) 10 5 0.5 W W W VRGM 10 V TVJ TVJM Tstg -40...+125 125 -40...+125 °C °C °C Md Mounting torque Weight 2.5 22 Nm lb.in. 20 g ● ● ● Applications Motor control Power converter AC power controller ● ● ● Advantages Space and weight savings Simple mounting Improved temperature and power cycling ● ● ● Dimensions in mm (1 mm = 0.0394") Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions © 2000 IXYS All rights reserved 1-3 CS 35 Symbol Test Conditions Characteristic Values IR, ID TVJ = TVJM; VR = VRRM; VD = VDRM £ 10 mA VT IT £ 1.5 V VT0 rT For power-loss calculations only (TVJ = 125°C) 0.85 3.5 V mW VGT VD = 6 V; IGT VD = 6 V; VGD IGD TVJ = TVJM; IL = 150 A; TVJ = 25°C TVJ = 25°C TVJ = -40°C TVJ = 25°C TVJ = -40°C £ £ £ £ 1.5 1.9 100 200 V V mA mA VD = 2/3 VDRM £ £ 0.2 1 V mA TVJ = 25°C; tP = 30 ms IG = 0.1 A; diG/dt = 0.1 A/ms £ 100 mA IH TVJ = 25°C; VD = 6 V; RGK = ¥ £ 80 mA tgd TVJ = 25°C; VD = 1/2 VDRM IG = 0.1 A; diG/dt = 0.1 A/ms £ 2 ms tq TVJ = TVJM; IT = 50 A, tP = 200 ms; di/dt = -10 A/ms VR = 100 V; dv/dt = 10 V/ms; VD = 2/3 VDRM typ. 100 ms RthJC RthJH DC current DC current 0.4 0.6 K/W K/W dS dA a Creepage distance on surface Strike distance through air Max. acceleration, 50 Hz 1.7 1.7 50 mm mm m/s2 500 10 8 V 6 1: PG(AV)= 0.5 W 2: PGM= 5 W; tG = 500 ms 3: PGM= 10 W; tG = 30 ms 4 TVJ= 25°C TVJ= 125°C 400 2 3 VG 2 1 IT 300 C 1 0.8 0.6 0.4 typ. lim. A B IGD: TVJ= -40°C IGD: TVJ= 0°C IGD: TVJ= 25°C A 200 100 0.2 IGD: TVJ= 25°C IGD: TVJ=125°C 0.1 100 101 102 2 4 68 103 mA 104 IG Fig. 1 Gate trigger range Triggering: A = no; B = possible, C = safe © 2000 IXYS All rights reserved 0 0 1 2 3 VT V 4 Fig. 2 On-state characteristics 2-3 CS 35 104 1200 A 150 VR = 0 V 2 As DC 180° sin 120° 60° 30° A 1000 6 ITSM 50Hz, 80%VRRM 800 TVJ = 45°C TVJ = 125°C IT(AV)M TVJ = 45°C I2t 100 TVJ = 125°C 4 600 400 50 2 200 0 10-3 103 10-2 10-1 100 s 101 0 1 2 t 3 4 5 6 7 ms 8 910 t Fig. 4 I2t versus time (1-10 ms) Fig. 3 Surge overload current ITSM: crest value, t: duration 0 50 100 °C 150 Tcase Fig. 5 Maximum forward current at case temperature 200 W RthJA : 0.9 K/W 150 PT 1.3 K/W 1.6 K/W 3.3 K/W 100 DC 180° sin 120° 60° 30° 50 0 0 20 40 60 80 0 100 120 A 140 IT(AV)M 50 100 °C 150 Tamb Fig. 6 Power dissipation versus on-state current and ambient temperature RthJH for various conduction angles d: 0.8 30° 60° 120° 180° DC K/W 0.6 ZthJH d RthJH (K/W) DC 180° 120° 60° 30° 0.6 0.65 0.677 0.725 0.775 0.4 Constants for ZthJH calculation: i 0.2 0.0 10-3 1 2 3 4 10-2 10-1 100 s 101 Rthi (K/W) ti (s) 0.01 0.09 0.30 0.20 0.001 0.013 0.3 0.9 102 t Fig. 7 Transient thermal impedance junction to heatsink © 2000 IXYS All rights reserved 3-3