VVZ 110 VVZ 175 IdAVM = 110/167 A VRRM = 1200-1600 V Three Phase Half Controlled Rectifier Bridge, B6HK VRSM VDSM VRRM VDRM V V 1300 1500 1700 1200 1400 1600 C ~ A Type 3 2 VVZ 110-12io7 VVZ 110-14io7 VVZ 175-12io7 VVZ 175-14io7 VVZ 175-16io7 D ~ 1 E ~ E D C B 32 Symbol Test Conditions IdAV IFRMS, ITRMS TC = 85°C; module per leg IFSM, ITSM TVJ = 45°C; VR = 0 Maximum Ratings VVZ 110 VVZ 175 110 58 167 89 A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1150 1230 1500 1600 A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1000 1070 1350 1450 A A TVJ = 45°C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 6600 6280 11200 10750 A2s A2s TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 5000 4750 9100 8830 A2s A2s Features ● I2t (di/dt)cr (dv/dt)cr TVJ = TVJM repetitive, IT = 50 A f =400 Hz, tP =200 ms VD = 2/3 VDRM IG = 0.3 A, non repetitive, diG/dt = 0.3 A/ms, IT = 1/3 • IdAV TVJ = TVJM; VDR = 2/3 VDRM RGK = ¥; method 1 (linear voltage rise) TVJ = TVJM IT = ITAVM tp = 30 ms tp = 500 ms tp = 10 ms PGAVM TVJ TVJM Tstg VISOL 50/60 Hz, RMS t = 1 min t=1s IISOL £ 1 mA Md Mounting torque (M6) Terminal connection torque (M6) typ. Weight 150 A/ms 500 A/ms 1000 V/ms ● ● ● ● ● ● V 10 5 1 0.5 W W W W -40...+125 125 -40...+125 °C °C °C 2500 3000 V~ V~ 5±15 % 5±15 % 300 Nm Nm g £ £ £ Input rectifier for PWM converter Input rectifier for switch mode power supplies (SMPS) Softstart capacitor charging Advantages ● ● 10 Package with screw terminals Isolation voltage 3000 V~ Planar passivated chips UL registered E72873 Applications ● VRGM PGM 1 A + B - Easy to mount with two screws Space and weight savings Improved temperature and power cycling Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. © 2000 IXYS All rights reserved 1-2 VVZ 110 VVZ 175 Symbol Test Conditions IR, ID VR = VRRM; VD = VDRM VF, VT IF, IT = 200 A, TVJ = 25°C VT0 rT For power-loss calculations only (TVJ = 125°C) VGT VD = 6 V; IGT VD = 6 V; VGD IGD TVJ = TVJM; TVJ = TVJM; IL IG = 0.3 A; tG = 30 ms diG/dt = 0.3 A/ms IH tgd £ £ TVJ = TVJM TVJ = 25°C £ RthJH 5 0.3 1.75 1.57 V 0.85 6 0.85 3.5 V mW £ £ £ £ 1.5 1.6 100 200 V V mA mA VD = 2/3 VDRM VD = 2/3 VDRM £ £ 0.2 5 V mA £ 450 mA TVJ = 25°C; VD = 6 V; RGK = ¥ £ 200 mA TVJ = 25°C; VD = 1/2 VDRM IG = 0.3 A; diG/dt = 0.3 A/ms £ 2 ms TVJ = 25°C 1: IGT, TVJ = 125°C 2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C V VG 2 3 1 5 6 1 4 4: PGAV = 0.5 W 0.65 0.108 0.8 0.133 0.46 0.077 0.55 0.092 K/W K/W K/W K/W 10 9.4 50 5: PGM = 5 W 6: PGM = 10 W IGD, TVJ = 125°C 0.1 1 10 100 1000 IG mA Fig. 1 Gate trigger characteristics 120 A Creeping distance on surface Creepage distance in air Max. allowable acceleration dS dA a mA mA TVJ = 25°C TVJ = -40°C TVJ = 25°C TVJ = -40°C per thyristor (diode); DC current per module per thyristor (diode); DC current per module RthJC 10 Characteristic Values VVZ 110 VVZ 175 IdAV VVZ 110 100 80 mm mm m/s2 60 40 20 0 0 50 100 °C 150 s 101 TC Fig. 2 Dimensions in mm (1 mm = 0.0394") 900 A M6x10 0.7 VVZ 110 50 Hz 80% VRRM 800 IFSM 7 DC output current at case temperature K/W VVZ 110 0.6 ZthJC 700 0.5 30 TVJ = 45°C 600 3 0.4 500 94 80 72 26 0.3 400 26 TVJ = 125°C C ~ D ~ E ~ B - A + 3 4 2 5 1 6 12 25 66 © 2000 IXYS All rights reserved 6.5 15 54 27 6.5 0.2 300 0.1 200 100 10-3 10-2 10-1 100 t Fig. 3 Surge overload current IFSM: Crest value, t: duration s 101 0.0 10-3 10-2 10-1 100 t Fig. 4 Transient thermal impedance junction to case (per leg) 2-2