DGS 20-018AS IFAV = 23 A VRRM = 180 V CJunction = 33 pF Gallium Arsenide Schottky Rectifier Preliminary Data VRSM VRRM V V 180 180 Type A C TO-263 AB A DGS 20-018AS A C (TAB) A = Anode, C = Cathode , TAB = Cathode Symbol Conditions Maximum Ratings IFAV IFAV TC = 25°C; DC TC = 90°C; DC 23 17 A A IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine 30 A -55...+175 -55...+150 °C °C 48 W Features Low forward voltage Very high switching speed Low junction capacity of GaAs - low reverse current peak at turn off Soft turn off Temperature independent switching behaviour High temperature operation capability Epoxy meets UL 94V-0 ● ● ● ● TVJ Tstg ● ● Ptot TC = 25°C ● Applications MHz Switched mode power supplies ● (SMPs) ● ● ● Symbol IR VF CJ Conditions Small size SMPs High frequency converters Resonant converters Characteristic Values typ. max. TVJ = 25°C VR = VRRM TVJ = 125°C VR = VRRM 2.0 2.0 IF = 7.5 A; IF = 7.5 A; TVJ = 125°C TVJ = 25°C 0.8 0.8 VR = 100 V; TVJ = 125°C 33 RthJC Weight 1.0 V V pF 3.1 2 mA mA K/W g IXYS reserves the right to change limits, Conditions and dimensions. © 2001 IXYS All rights reserved 119 Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified 1-2 DGS 20-018AS 400 30 pF 10 A CJ IF 100 1 0.1 TVJ = 125°C 25°C TVJ = 125°C 0.01 0.0 0.5 1.0 1.5 VF 10 0.1 V 2.0 Fig. 1 typ. forward characteristics 1 10 100 V 1000 VR Fig. 2 typ. junction capacity versus blocking voltage 10 Outline TO-263 AB K/W Single Pulse 1 ZthJC 0.1 0.01 DGS10-015/018BS 0.00001 0.0001 0.001 0.01 Fig. 3 typ. thermal impedance junction to case 0.1 1 s 10 t Note: explanatory comparison of the basic operational behaviour of rectifier diodes and Gallium Arsenide Schottky diodes: conduction forward characteristics turn off characteristics GaAs Schottky Diode by majority carriers only VF (IF), see Fig. 1 reverse current charges junction capacity CJ, see Fig. 2; not temperature dependant no turn on overvoltage peak Millimeter Min. Max. Inches Min. Max. A A1 4.06 2.03 4.83 2.79 .160 .080 .190 .110 b b2 0.51 1.14 0.99 1.40 .020 .045 .039 .055 c c2 0.46 1.14 0.74 1.40 .018 .045 .029 .055 D D1 8.64 8.00 9.65 8.89 .340 .315 .380 .350 E E1 e 9.65 10.29 6.22 8.13 2.54 BSC .380 .405 .245 .320 .100 BSC L L1 L2 L3 L4 14.61 2.29 1.02 1.27 0 15.88 2.79 1.40 1.78 0.20 .575 .090 .040 .050 0 .625 .110 .055 .070 .008 R 0.46 0.74 .018 .029 119 turn on characteristics Rectifier Diode by majority + minority carriers VF (IF) extraction of excess carriers causes temperature dependant reverse recovery (trr, IRM, Qrr) delayed saturation leads to VFR Dim. © 2001 IXYS All rights reserved 2-2