DGS 4-025A DGSK 8-025A IFAV = 5.4 A VRRM = 250 V CJunction = 6.4 pF Gallium Arsenide Schottky Rectifier Type Marking on product DGS 3-025AS Circuit Package A = Anode, C = Cathode , TAB = Cathode A DGS 3-025AS 3A250AS Single DGS 4-025A DGS 4-025A Single C TO-252 AA A A C TO-220 AC C A DGSK 8-025A DGSK 8-025A Common cathode TO-220 AB A Symbol Conditions C A Maximum Ratings VRRM/RSM 250 V IFAV IFAV TC = 25°C; DC TC = 90°C; DC 5.4 3.9 A A IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine 10 A -55...+175 -55...+150 °C °C 18 W 0.4...0.6 Nm TVJ Tstg Ptot TC = 25°C Md mounting torque (TO-220) Symbol Conditions IR VF CJ Characteristic Values typ. max. TVJ = 25°C VR = VRRM TVJ = 125°C VR = VRRM 0.7 0.7 IF = 2 A; IF = 2 A; TVJ = 125°C TVJ = 25°C 1.3 1.3 VR = 100 V; TVJ = 125°C 6.4 RthJC 1.6 mA mA A C A C (TAB) C (TAB) Features • Low forward voltage • Very high switching speed • Low junction capacity of GaAs - low reverse current peak at turn off • Soft turn off • Temperature independent switching behaviour • High temperature operation capability • Epoxy meets UL 94V-0 Applications • MHz switched mode power supplies (SMPs) • Small size SMPs • High frequency converters • Resonant converters V V pF 8.5 K/W RthCH TO-220 0.5 K/W Weight TO-252 TO-220 0.3 2 g g Pulse test: C (TAB) A Pulse Width = 5 ms, Duty Cycle < 2.0 % IXYS reserves the right to change limits, test conditions and dimensions © 2004 IXYS All rights reserved 435 Data according to IEC 60747 and per diode unless otherwise specified 1-2 DGS 4-025A DGSK 8-025A 10 DGS 3-025AS Outline TO-220 100 pF A 1 IF CJ TVJ = 125°C 0,1 10 TVJ = 125°C 25°C 0,01 0,001 0,0 0,5 1,0 1,5 VF 1 0,1 V 2,0 1 10 100 V 1000 VR Fig. 2 typ. junction capacity versus blocking voltage Fig. 1 typ. forward characteristics 10 K/W 1 ZthJC Single Pulse 0,1 Dim. A B C D E F G H J K M N Q R Millimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.38 0.56 2.29 2.79 Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.015 0.022 0.090 0.110 Outlines TO-252 0,01 DGS3-025AS 0,00001 0,0001 0,001 0,01 0,1 s 1 10 t Fig. 3 typ. thermal impedance junction to case Note: explanatory comparison of the basic operational behaviour of rectifier diodes and Gallium Arsenide Schottky diodes: conduction forward characteristics turn off characteristics turn on characteristics Rectifier Diode by majority + minority carriers VF (IF) extraction of excess carriers causes temperature dependant reverse recovery (trr, IRM, Qrr) delayed saturation leads to VFR GaAs Schottky Diode by majority carriers only VF (IF), see Fig. 1 reverse current charges junction capacity CJ, see Fig. 2; not temperature dependant no turn on overvoltage peak IXYS reserves the right to change limits, test conditions and dimensions © 2004 IXYS All rights reserved Dim. A A1 A2 b b1 b2 c c1 D D1 E E1 e e1 H L Millimeter Min. Max. 2.19 2.38 0.89 1.14 0 0.13 0.64 0.89 0.76 1.14 5.21 5.46 0.46 0.58 0.46 0.58 5.97 6.22 4.32 5.21 6.35 6.73 4.32 5.21 2.28 BSC 4.57 BSC 9.40 10.42 0.51 1.02 Inches Min. Max. 0.086 0.094 0.035 0.045 0 0.005 0.025 0.035 0.030 0.045 0.205 0.215 0.018 0.023 0.018 0.023 0.235 0.245 0.170 0.205 0.250 0.265 0.170 0.205 0.090 BSC 0.180 BSC 0.370 0.410 0.020 0.040 L1 L2 L3 0.64 0.89 2.54 0.025 0.035 0.100 1.02 1.27 2.92 0.040 0.050 0.115 435 1 Anode 2 NC 3 Anode 4 Cathode 2-2