GS8DI25104 IDC = 4 A V RRM = 250 V CJunction = 9 pF Gallium Arsenide Schottky Rectifier Isolated Surface Mount Package Preliminary Data C1 A2 C2 5. 8. A = Anode, C = Cathode 4. 1. C1 A1 C2 Symbol Conditions Maximum Ratings IFAV IFAV TC = 25°C; DC TC = 90°C; DC 04 3.5 A A IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine 10 A -55...+175 -55...+150 °C °C TBD >2500 >600 W V V TVJ Tstg Ptot Isolation Isolation TC = 25°C (20W/device) (Substrate to Case) (Diode to Diode) Symbol Conditions Features Low forward voltage Very high switching speed Trr <15ns Low junction capacity of GaAs - low reverse current peak at turn off Soft turn off Temperature independent switching behaviour High temperature operation capability Epoxy meets UL 94V-0 Applications IR VF CJ Characteristic Values typ. max. TVJ = 25°C VR = VRRM TVJ = 125°C VR = VRRM 1.3 1.3 IF = 2 A; IF = 2 A; TVJ = 125°C TVJ = 25°C 1.3 1.2 VR = 100 V; TVJ = 125°C 9 RthJC Pulse test: 1.5 MHz switched mode power supplies (SMPS) mA mA High frequency converters Resonant converters V V pF 125 C/W c Pulse Width = 5 ms, Duty Cycle < 2.0 % Data per diode unless otherwise specified IXYSRF reserves the right to change limits, conditions and dimensions. © 2003 IXYSRF/Directed Energy, Inc. IXYSRF/Directed Energy, Inc. 2401 Research Blvd. Ste 108, Fort Collins, CO 80526 Phone: (970) 493-1901, Fax: 970-493-1903, www.directedenergy.com IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim, Germany Phone: +49-6206-503-0, Fax: +49-6206-503627 GS8DI25104 g 100 CAPACITANCE IN pF Amperes 10.00 1.00 0.10 0.00 0.50 1.00 1.50 2.00 10 1 0.1 1 Volts Fig. 1 Typical forward characteristics 100 1000 Fig. 2 Typical junction capacity versus blocking voltage 300 160 140 250 TEMPERATURE IN C REVERSE VOLTAGE IN VOLTS 10 REVERSEBIASVOLTAGEINVOLTS 200 150 100 120 100 80 60 40 50 20 0 1.00E-06 1.00E-05 1.00E-04 0 1.00E-06 1.00E-05 1.00E-04 1.00E-03 1.00E-02 LEAKAGE CURRENT IN AMPERES LEAKAGE CURRENT IN AMPERES Fig. 3 Typical leakage current vs. voltage at 25C Fig. 4 Typical leakage current vs. temperature at 100V Reverse Explanatory comparison of the basic operational behavior of rectifier diodes and Gallium Arsenide Schottky diodes: Conduction Rectifier Diode By majority + minority carriers GaAs Schottky Diode By majority carriers only Forward characteristics VF (IF) VF (IF), see Fig. 1 Turn off characteristics Extraction of excess carriers causes temperature dependant reverse recovery (trr, IRM, Qrr) Reverse current charges junction capacity CJ, see Fig. 2; not temperature dependent Turn on characteristics Delayed saturation leads to VFR No turn on overvoltage peak © 2003 IXYSRF/ IXYSRF/Directed Energy, Inc. 2401 Research Blvd. Ste 108, Fort Collins, CO 80526 Phone: (970) 493-1901, Fax: 970-493-1903, www.directedenergy.com IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim, Germany Phone: +49-6206-503-0, Fax: +49-6206-503627