IXYS IXFH22N55

HiPerFETTM
Power MOSFET
IXFH 22 N55 VDSS
ID (cont)
RDS(on)
trr
N-Channel Enhancement Mode
Avlanche Rated, High dv/dt, Low trr
= 550 V
= 22 A
= 0.27 W
£ 250 ns
Preliminary data
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
550
V
VDGR
TJ = 25°C to 150°C; RGS = 1 MW
550
V
VGS
Continuous
±20
V
VGSM
Transient
±30
V
ID25
TC = 25°C
22
A
IDM
TC = 25°C, pulse width limited by TJM
88
A
IAR
TC = 25°C
22
A
EAR
TC = 25°C
30
mJ
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS,
TJ £ 150°C, RG = 2 W
5
V/ns
PD
TC = 25°C
300
W
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
300
°C
TJ
TL
1.6 mm (0.063 in) from case for 10 s
Md
Mounting torque
1.13/10 Nm/lb.in.
Weight
6
g
TO-247 AD
D (TAB)
G = Gate,
S = Source,
D = Drain,
TAB = Drain
Features
• International standard packages
JEDEC TO-247 AD
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance (< 5 nH)
- easy to drive and to protect
• Fast intrinsic Rectifier
Applications
Symbol
Test Conditions
VDSS
VGS = 0 V, ID = 250 mA
VGS(th)
VDS = VGS, ID = 4 mA
IGSS
VGS = ±20 VDC, VDS = 0
IDSS
VDS = 0.8 • VDSS
VGS = 0 V
RDS(on)
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
550
2
V
4.5
V
±100
nA
TJ = 25°C
TJ = 125°C
250
1
mA
mA
VGS = 10 V, ID = 0.5 • ID25
Pulse test, t £ 300 ms, duty cycle d £ 2 %
0.27
W
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
•
•
•
•
Power Factor Control Circuits
Uninterruptible Power Supplies (UPS)
Battery chargers
Switched-mode and resonant-mode
power supplies
• DC choppers
• Temperature and lighting controls
• Low voltage relays
Advantages
• Easy to mount with 1 screw
(isolated mounting screw hole)
• Space savings
• High power density
94527A (10/95)
1-4
IXFH 22N55
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
VDS = 10 V; ID = 0.5 ID25, pulse test
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
Crss
td(on)
11
18
S
4200
pF
450
pF
135
pF
TO-247 AD Outline
20
40
ns
tr
VGS = 10 V, VDS = 0.5 • VDSS,
43
60
ns
td(off)
ID = 0.5 • ID25, RG = 2 W (External)
70
90
ns
40
60
ns
150
170
nC
29
40
nC
60
85
nC
A
B
19.81 20.32
20.80 21.46
0.780 0.800
0.819 0.845
K/W
C
D
15.75 16.26
3.55 3.65
0.610 0.640
0.140 0.144
E
F
4.32 5.49
5.4
6.2
0.170 0.216
0.212 0.244
G
H
1.65 2.13
4.5
0.065 0.084
0.177
J
K
1.0
1.4
10.8 11.0
0.040 0.055
0.426 0.433
tf
Qg(on)
Qgs
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
RthJC
0.42
RthCK
0.15
Source-Drain Diode
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
Test Conditions
IS
VGS = 0 V
22
A
ISM
Repetitive; pulse width limited by TJM
88
A
VSD
IF = IS, VGS = 0 V,
Pulse test, t £ 300 ms, duty cycle d £ 2 %
1.5
V
t rr
IF = IS, -di/dt = 100 A/ms, VR = 100 V
TJ = 125°C
250
400
ns
ns
© 2000 IXYS All rights reserved
Dim. Millimeter
Min. Max.
Inches
Min. Max.
L
M
4.7
0.4
5.3
0.8
0.185 0.209
0.016 0.031
N
1.5 2.49
0.087 0.102
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
2-4
IXFH 22N55
Fig. 1 Output Characteristics
Fig. 2 Input Admittance
40
TJ = 25°C
TJ = 25°C
VDS = 20V
30
6V
30
20
ID - Amperes
ID - Amperes
40
V GS = 10V
9V
5V
20
10
10
0
0
0
5
10
15
20
0
1
2
3
4
VDS - Volts
6
8
9
10
Fig. 4 Temperature Dependence
of Drain to Source Resistance
1.5
2.50
TJ = 25°C
2.25
RDS(on) - Normalized
1.4
1.3
1.2
VGS = 10V
1.1
VGS = 15V
1.0
VGS = 10V
ID = 11A
2.00
1.75
1.50
1.25
1.00
0.75
0.9
0
5
10
15
20
25
30
35
0.50
-50
40
-25
0
ID - Amperes
25
50
75
100 125 150
TJ - Degrees C
Fig. 5 Drain Current vs.
Case Temperature
Fig. 6 Temperature Dependence of
Breakdown and Threshold Voltage
1.2
25
VGS(th)
BVDSS
1.1
BV/VG(th) - Normalized
20
ID - Amperes
7
VGS - Volts
Fig. 3 RDS(on) vs. Drain Current
RDS(on) - Normalized
5
15
10
5
1.0
0.9
0.8
0.7
0.6
0
0
25
50
75
100
TC - Degrees C
© 2000 IXYS All rights reserved
125
150
0.5
-50
-25
0
25
50
75
100 125 150
TJ - Degrees C
3-4
IXFH 22N55
Fig.7 Gate Charge Characteristic Curve
Fig.8 Forward Bias Safe Operating Area
10
100
10µs
9
VDS = 300V
ID = 22A
IG = 10mA
VGE - Volts
7
Limited by RDS(on)
ID - Amperes
8
6
5
4
3
100µs
10
1ms
10ms
1
100ms
2
1
0
0.1
0
20
40
60
80
100
120
140
1
10
Gate Charge - nCoulombs
Capacitance - pF
Fig.10 Source Current vs. Source
to Drain Voltage
80
Ciss
4000
70
3500
60
ID - Amperes
3000
f = 1 Mhz
VDS = 25V
2500
600
VDS - Volts
Fig.9 Capacitance Curves
4500
100
2000
1500
50
TJ = 125°C
40
30
20
1000
Coss
500
0
0
5
10
TJ = 25°C
10
Crss
15
20
0
0.00
25
0.25
VCE - Volts
0.50
0.75
1.00
1.25
1.50
VSD - Volts
Fig.11 Transient Thermal Impedance
Thermal Response - K/W
1
D=0.5
0.1
D=0.2
D=0.1
D=0.05
0.01 D=0.02
D=0.01
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2000 IXYS All rights reserved
4-4