HiPerFETTM Power MOSFET IXFH 22 N55 VDSS ID (cont) RDS(on) trr N-Channel Enhancement Mode Avlanche Rated, High dv/dt, Low trr = 550 V = 22 A = 0.27 W £ 250 ns Preliminary data Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 550 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 550 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 22 A IDM TC = 25°C, pulse width limited by TJM 88 A IAR TC = 25°C 22 A EAR TC = 25°C 30 mJ dv/dt IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W 5 V/ns PD TC = 25°C 300 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 °C TJ TL 1.6 mm (0.063 in) from case for 10 s Md Mounting torque 1.13/10 Nm/lb.in. Weight 6 g TO-247 AD D (TAB) G = Gate, S = Source, D = Drain, TAB = Drain Features • International standard packages JEDEC TO-247 AD • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance (< 5 nH) - easy to drive and to protect • Fast intrinsic Rectifier Applications Symbol Test Conditions VDSS VGS = 0 V, ID = 250 mA VGS(th) VDS = VGS, ID = 4 mA IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8 • VDSS VGS = 0 V RDS(on) Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 550 2 V 4.5 V ±100 nA TJ = 25°C TJ = 125°C 250 1 mA mA VGS = 10 V, ID = 0.5 • ID25 Pulse test, t £ 300 ms, duty cycle d £ 2 % 0.27 W IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved • • • • Power Factor Control Circuits Uninterruptible Power Supplies (UPS) Battery chargers Switched-mode and resonant-mode power supplies • DC choppers • Temperature and lighting controls • Low voltage relays Advantages • Easy to mount with 1 screw (isolated mounting screw hole) • Space savings • High power density 94527A (10/95) 1-4 IXFH 22N55 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 0.5 ID25, pulse test Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Crss td(on) 11 18 S 4200 pF 450 pF 135 pF TO-247 AD Outline 20 40 ns tr VGS = 10 V, VDS = 0.5 • VDSS, 43 60 ns td(off) ID = 0.5 • ID25, RG = 2 W (External) 70 90 ns 40 60 ns 150 170 nC 29 40 nC 60 85 nC A B 19.81 20.32 20.80 21.46 0.780 0.800 0.819 0.845 K/W C D 15.75 16.26 3.55 3.65 0.610 0.640 0.140 0.144 E F 4.32 5.49 5.4 6.2 0.170 0.216 0.212 0.244 G H 1.65 2.13 4.5 0.065 0.084 0.177 J K 1.0 1.4 10.8 11.0 0.040 0.055 0.426 0.433 tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC 0.42 RthCK 0.15 Source-Drain Diode K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V 22 A ISM Repetitive; pulse width limited by TJM 88 A VSD IF = IS, VGS = 0 V, Pulse test, t £ 300 ms, duty cycle d £ 2 % 1.5 V t rr IF = IS, -di/dt = 100 A/ms, VR = 100 V TJ = 125°C 250 400 ns ns © 2000 IXYS All rights reserved Dim. Millimeter Min. Max. Inches Min. Max. L M 4.7 0.4 5.3 0.8 0.185 0.209 0.016 0.031 N 1.5 2.49 0.087 0.102 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-4 IXFH 22N55 Fig. 1 Output Characteristics Fig. 2 Input Admittance 40 TJ = 25°C TJ = 25°C VDS = 20V 30 6V 30 20 ID - Amperes ID - Amperes 40 V GS = 10V 9V 5V 20 10 10 0 0 0 5 10 15 20 0 1 2 3 4 VDS - Volts 6 8 9 10 Fig. 4 Temperature Dependence of Drain to Source Resistance 1.5 2.50 TJ = 25°C 2.25 RDS(on) - Normalized 1.4 1.3 1.2 VGS = 10V 1.1 VGS = 15V 1.0 VGS = 10V ID = 11A 2.00 1.75 1.50 1.25 1.00 0.75 0.9 0 5 10 15 20 25 30 35 0.50 -50 40 -25 0 ID - Amperes 25 50 75 100 125 150 TJ - Degrees C Fig. 5 Drain Current vs. Case Temperature Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage 1.2 25 VGS(th) BVDSS 1.1 BV/VG(th) - Normalized 20 ID - Amperes 7 VGS - Volts Fig. 3 RDS(on) vs. Drain Current RDS(on) - Normalized 5 15 10 5 1.0 0.9 0.8 0.7 0.6 0 0 25 50 75 100 TC - Degrees C © 2000 IXYS All rights reserved 125 150 0.5 -50 -25 0 25 50 75 100 125 150 TJ - Degrees C 3-4 IXFH 22N55 Fig.7 Gate Charge Characteristic Curve Fig.8 Forward Bias Safe Operating Area 10 100 10µs 9 VDS = 300V ID = 22A IG = 10mA VGE - Volts 7 Limited by RDS(on) ID - Amperes 8 6 5 4 3 100µs 10 1ms 10ms 1 100ms 2 1 0 0.1 0 20 40 60 80 100 120 140 1 10 Gate Charge - nCoulombs Capacitance - pF Fig.10 Source Current vs. Source to Drain Voltage 80 Ciss 4000 70 3500 60 ID - Amperes 3000 f = 1 Mhz VDS = 25V 2500 600 VDS - Volts Fig.9 Capacitance Curves 4500 100 2000 1500 50 TJ = 125°C 40 30 20 1000 Coss 500 0 0 5 10 TJ = 25°C 10 Crss 15 20 0 0.00 25 0.25 VCE - Volts 0.50 0.75 1.00 1.25 1.50 VSD - Volts Fig.11 Transient Thermal Impedance Thermal Response - K/W 1 D=0.5 0.1 D=0.2 D=0.1 D=0.05 0.01 D=0.02 D=0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2000 IXYS All rights reserved 4-4